Journal of Crystal Growth

Journal of Crystal Growth, Vol.257, No.1-2 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (28 articles)

1 - 6	In-plane epitaxial relationships between a-plane sapphire substrates and GaN layers grown by different techniques Paskova T, Darakchieva V, Valcheva E, Paskov PP, Monemar B, Heuken M
7 - 18	Physical modelling of the melt flow during large-diameter silicon single crystal growth Gorbunov L, Pedchenko A, Feodorov A, Tomzig E, Virbulis J, Ammon WV
19 - 30	Growth kinetics of Si on fullsheet, patterned and silicon-on-insulator substrates Hartmann JM, Abbadie A, Vinet M, Clavelier L, Holliger P, Lafond D, Semeria MN, Gentile P
31 - 41	Model of the temperature field in tube furnaces and its application to a system of "contactless" crystal growth from the vapour Szczerbakow A
42 - 50	Detailed X-ray diffraction studies on optically pumped mid-infrared InAs/Ga(In)Sb/AlSb type-II lasers Hoffmann G, Schimper HJ, Schwender C, Herhammer N, West GF, Vogelgesang B, Drumm JO, Fouckhardt H, Scheib M
51 - 59	Experimental evidence for critical 2D nuclei in the 2D/3D growth mode transition of compressive and tensile strained InGaAs on InP(001) Gendry M, Hollinger G
60 - 68	Influence of twinned structure on the morphology of CdTe(111) layers grown by MOCVD on GaAs(100) substrates Mora-Sero I, Polop C, Ocal C, Aguilo M, Munoz-Sanjose V
69 - 74	H-2-assisted control growth of Si nanowires Yan XQ, Liu DF, Ci LJ, Wang JX, Zhou ZP, Yuan HJ, Song L, Gao Y, Liu LF, Zhou WY, Wang G, Xie SS
75 - 83	Influence of nitrogen doping on the properties of 4H-SiC single crystals grown by physical vapor transport Rost HJ, Doerschel J, Irmscher K, Schulz D, Siche D
84 - 88	Preparation and luminescent characteristics of Mn2+, Er3+ co-doped ZrO2 nanocrystals Wang SF, Gu F, Lu MK, Zhou GJ, Ai ZP, Xu D, Yuan DR
89 - 96	Using As/P exchange processes to modify InAs/InP quantum dots Poole PJ, Williams RL, Lefebvre J, Moisa S
97 - 103	Growth of GaN nanowires on Si substrate using Ni catalyst in vertical chemical vapor deposition reactor Kim TY, Lee SH, Mo YH, Shim HW, Nahm KS, Suh EK, Yang JW, Lim KY, Park GS
104 - 109	Formation of InAs islands on InP(311)B surface by molecular beam epitaxy Paranthoen C, Bertru N, Platz C, Caroff P, Dehaese O, Folliot H, Le Corre A, Loualiche S
110 - 115	Growth and characterizations of bulk ZnSe single crystal by chemical vapor transport Li HY, Jie WQ
116 - 122	In situ monitoring of parasitic growth on the quartz top plate during the MOVPE growth of GaAs/AlGaAs structures Weeks KJ, Irvine SJC, Bland SW
123 - 128	Low-temperature growth of aluminum nitride on sapphire substrates Guo QX, Yahata K, Tanaka T, Nishio M, Ogawa H
129 - 135	Processing conditions of heavily Pb doped superconducting (Bi, Pb)(2)Sr2Ca2Cu3Oy thin films Guldeste A, Goringe MJ
136 - 140	Growth and properties of organic nonlinear optical crystals: L-tartaric acid-nicotinamide and D-tartaric acid-nicotinamide Shen J, Zheng JM, Che YX, Xi B
141 - 145	Crystal growth and spectroscopic properties of Er : La3Ga5SiO14 single crystals Wang ZM, Yuan DR, Shi XZ, Cheng XF, Xu D, Lv M, Pan LH, Guo SY
146 - 152	Growth and structure of SrAl0.5Ta0.5O3 : LaAlO3 solid solutions single crystals Berkowski M, Fink-Finowicki J, Diduszko R, Byszewski P, Aleksiyko R, Kikalejshvili-Domukhovska R
153 - 160	RF-plasma enhanced CVD of TiSi2 thin films: effects of TiCl4 flow rate and RF power Fouad OA, Uddin NMD, Yamazato M, Nagano M
161 - 164	Growth and optical properties of Zn : KLN single crystal Yang CH, Guo YJ, Li JL, Wang B
165 - 168	Optical properties of a new nonlinear borate crystal LiRbB4O7 Komatsu R, Ono Y, Kajitani T, Rotermund F, Petrov V
169 - 176	Growth of Cu-doped Li2B4O7 single crystals by vertical Bridgman method and their characterization Ishii M, Kuwano Y, Asai T, Senguttuvan N, Hayashi T, Kobayashi M, Oku T, Sakai K, Adachi T, Shimizu HM, Suzuki J
177 - 184	Anti-solvent crystallization and transformation of thiazole-derivative polymorphs - I: effect of addition rate and initial concentrations Kitamura M, Sugimoto M
185 - 198	Study of segregation coefficient of Mn(II) impurity in ammonium oxalate monohydrate crystals and the relationship between segregation coefficient and growth kinetics Sangwal K, Mielniczek-Brzoska E
199 - 211	Visualization of return flow structure in mixed convection of gas over a heated circular plate in a horizontal flat duct Tuh JL, Lin TF
212 - 217	PbTe/CdTe single quantum wells grown on GaAs (100) substrates by molecular beam epitaxy Koike K, Honden T, Makabe I, Yan FP, Yano M