1 - 18 |
Semiconductor Bridgman growth inside inertial flight mode orbiting systems of low orbital eccentricity and long orbital period Ruiz X, Ermakov M |
19 - 25 |
Strain relaxation in InGaAsP/InP grown by metal-organic vapor-phase epitaxy Kitatani T, Taike A, Aoki M |
26 - 37 |
A study of regrowth interface and material quality for a novel InP-based architecture Raring JW, Skogen EJ, Denbaars SP, Coldren LA |
38 - 47 |
Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer Moran B, Wu F, Romanov AE, Mishra UK, Denbaars SP, Speck JS |
48 - 53 |
Study of stimulated emission from InGaN/GaN multiple quantum well structures Wang T, Parbrook PJ, Whitehead MA, Fan WH, Fox AM |
54 - 62 |
Growth and properties of 40mm diameter Hg1-xCdxTe using the two-stage Pressurised Bridgman Method Wang Y, Li QB, Han QL, Ma QH, Ji RB, Song BW, Jie WQ, Zhou YH, Inatomi Y |
63 - 67 |
Growth and structural properties of thick InAs films on GaAs with low-pressure metalorganic vapor phase epitaxy Yuan HR, Chua SJ, Miao ZL, Dong JR, Wang YJ |
68 - 73 |
Microwave annealing enhances Al-induced lateral crystallization of amorphous silicon thin films Rao R, Sun GC |
74 - 78 |
Phase separation in AlGaN/GaN heterojunction grown by metalorganic chemical vapor deposition Chen P, Chua SJ, Miao ZL |
79 - 85 |
Crack-free InAlGaN quaternary alloy films grown on Si(111) substrate by metalorganic chemical vapor deposition Wu JJ, Li DB, Lu Y, Han XX, Li JM, Wei HY, Kang TT, Wang XH, Liu XL, Zhu QS, Wang ZG |
86 - 99 |
Understanding GaN nucleation layer evolution on sapphire Koleske DD, Coltrin ME, Cross KC, Mitchell CC, Allerman AA |
100 - 105 |
Defect characteristics of ZnO film grown on (0001) sapphire with an ultrathin gallium wetting layer Wang Y, Du XL, Mei ZX, Zeng ZQ, Xu QY, Xue QK, Zhang Z |
106 - 110 |
Magnetic properties of Mn-implanted n-type Ge Liu LF, Chen NF, Chen CL, Li YL, Yin ZG, Yang F |
111 - 117 |
Growth properties of thin film ZnO deposited by MOCVD with n-butyl alcohol as the oxygen precursor Lamb DA, Irvine SJC |
118 - 128 |
Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy Paskova T, Paskov PP, Goldys EM, Valcheva E, Darakchieva V, Sodervall U, Godlewski M, Zielinski M, Hautakangas S, Saarinen K, Carlstrom CF, Wahab Q, Monemar B |
129 - 135 |
Structural and optical properties of GaAs/AlGaAs superlattice layer on InAs quantum dots Jeong Y, Choi H, Park Y, Hwang S, Yoon JJ, Lee J, Leem JY, Jeon M |
136 - 148 |
Stress and surface energies versus surface nanostructuring: the InGaAs/InP(001) epitaxial system Porte L |
149 - 155 |
Local structural change in GaCrN grown by radio frequency plasma-assisted molecular-beam epitaxy Hashimoto M, Tanaka H, Emura S, Kim MS, Honma T, Umesaki N, Zhou YK, Hasegawa S, Asahi H |
156 - 160 |
A twinned PbTe film induced by the 7x7 reconstruction of Si(111) Chen HY, Dong SS, Yang YK, Li DM, Zhang JH, Wang XJ, Kan SH, Zou GT |
161 - 166 |
Sublimation epitaxy of AlN on SiC: growth morphology and structural features Kakanakova-Georgieva A, Persson POA, Yakimova R, Hultman L, Janzen E |
167 - 171 |
Investigations on the solidification behavior of Li2B4O7 Sangeeta, Tiwari B, Sabharwal SC |
172 - 178 |
Growth and properties of (001)-oriented Pb(Zr0.52Ti0.48)O-3/LaNiO3 films on Si(001) substrates with TiN buffer layers Zhu TJ, Lu L, Thompson CV |
179 - 189 |
Analysis of radial segregation in directionally solidified Hg0.89Mn0.11Te Price MW, Scripa RN, Szofran FR, Motakef S, Hanson B |
190 - 194 |
Growth and spectral properties of Er3+/Yb3+-codoped Ca3Y2(BO3)(4) crystal Wei B, Hu ZS, Lin ZB, Zhang LZ, Wang GF |
195 - 202 |
Electrodeposition of nanocrystalline SnO2 coatings with two-layer microstructure Chang ST, Leu IC, Hon MH |
203 - 206 |
Controlled composition modulation in potassium lithium tantalate niobate crystals grown by off-centered TSSG method de Oliveira CEM, Orr G, Axelrold N, Agranat AJ |
207 - 212 |
Growth of Sr3Fe2O7-x single crystals by the floating zone method Maljuk A, Strempfer J, Ulrich C, Sofin M, Capogna L, Lin CT, Keimer B |
213 - 219 |
Shape-controlled synthesis of PbS microcrystals in large yields via a solvothermal process Xu LQ, Zhang WQ, Ding YW, Yu WC, Xing JY, Li FQ, Qian YT |
220 - 225 |
Czochralski technique growth of pure and rare-earth-doped SrWO4 crystals Jia GH, Tu CY, You ZY, Li JF, Zhu ZJ, Wang Y, Wu BC |
226 - 233 |
Rapid synthesis of Mn0.65Zn0.35Fe2O4/SiO2 homogeneous nanocomposites by modified sol-gel auto-combustion method Yan SF, Ling W, Zhou EL |
234 - 240 |
Investigation of multiple centers in U3+: CaF2 single crystals Su LB, Yang WQ, Xu J, Dong YJ, Zhou GQ |
241 - 247 |
Growth, structural and photophysical properties of Bi2GaTaO7 Luan JF, Zou ZG, Lu MH, Zheng SR, Chen YF |
248 - 257 |
Hydroxide carbonates and oxide carbonate hydrate of rare earths grown on glass via a hydrothermal route Han ZH, Xu P, Ratinac KR, Lu GQ |
258 - 265 |
Control of polymorphism and crystal size of L-glutamic acid in the absence of additives Cashell C, Corcoran D, Hodnett BK |
266 - 279 |
Phase transitions and precrystallization processes in a water-protein-electrolyte system Rozhkov SP |
280 - 284 |
A green hydrothermal route to copper nanocrystallites Zhang YC, Xing R, Hu XY |
285 - 291 |
Seed-mediated synthesis of silver nanostructures and polymer/silver nanocables by UV irradiation Zou K, Zhang XH, Duan XF, Meng XM, Wu SK |
292 - 302 |
Banded crystallization of tricosane in the presence of kinetic inhibitors during directional solidification Hutter JL, Hudson S, Smith C, Tetervak A, Zhang JH |
303 - 310 |
Single crystal growth and electron microscopy studies of Co/Zn-melilites with modulated structure Jia ZH, Schaper AK, Treutmann W, Rager H, Massa W |
311 - 319 |
Floating zone growth and characterization of Pr5Si3 single crystals Souptel D, Leithe-Jasper A, Loser W, Schnelle W, Borrmann H, Behr G |
320 - 328 |
Thermally induced effects during initial stage of crystal growth from melts Louchev OA, Kumaragurubaran S, Takekawa S, Kitamura K |