1 - 5 |
All-epitaxial growth of single-crystalline Ba-0.Sr-6(0).4TiO3/Ir/MgO/Si heterostructures Chen TL, Li XM, Wu WB, Yao SD, Wang K |
6 - 16 |
Microwave activated chemical bath deposition (MW-CBD) of zinc oxide: Influence of bath composition and substrate characteristics Peiro AM, Ayllon JA, Peral J, Domenech X, Domingo C |
17 - 23 |
Structural studies of a combined InAl-InGaAs capping layer on 1.3-mu m Inas/GaAs quantum dots Tey CM, Liu HY, Cullis AG, Ross IM, Hopkinson M |
24 - 30 |
Raman and photoluminescence studies on nanocrystalline ZnO grown on GaInPAs substrates Chen SJ, Liu YC, Jiang H, Lu YM, Zhang JY, Shen DZ, Fan XW |
31 - 40 |
Carrier gas and position effects on GaN growth in a horizontal HVPE reactor: An experimental and numerical study Dam CEC, Hageman PR, Larsen PK |
41 - 48 |
CdS thin films from two different chemical baths - structural and optical analysis Prabahar S, Dhanam M |
49 - 53 |
Gas-flow assisted bulk synthesis of V-type SnO2 nanowires Ling C, Qian WZ, Wei F |
54 - 58 |
MBE growth and characterization of IV-VI semiconductor thin-film structures on (110) BaF2 substrates Zhao FH, Lu XL, Keay JC, Ray D, Singh R, Majumdar A, Shi ZS |
59 - 65 |
Polycrystalline tubular nanostructures of germanium Mei YF, Siu GG, Li ZM, Fu RKY, Tang ZK, Chu PK |
66 - 75 |
Growth of ZnS thin films obtained by chemical spray pyrolysis: The influence of precursors Lopez MC, Espinos JP, Martin F, Leinen D, Ramos-Barrado JR |
76 - 80 |
Study of crystal formation in titanate glass irradiated by 800 nm femtosecond laser pulse Lu B, Yu BK, Chen B, Yan XN, Qiu JR, Jiang XW, Zhu CS |
81 - 87 |
Single crystal T0.3MoO3 growth by electrolytic reduction method of a T1(2)CO(3)-MoO3 melts Li CZ, Xiong R, Yin D, Tang Z, Wang JF, Li DH, Yu ZX, Shi J |
88 - 95 |
Growth of 4-in diameter near-stoichiometric lithium tantalate single crystals Kumaragurubaran S, Takekawa S, Nakamura M, Kitamura K |
96 - 102 |
Effect of annealing atmosphere on physical characteristics and photoluminescence properties of nitrogen-implanted ZnO thin films Yang CC, Lin CC, Peng CH, Chen SY |
103 - 110 |
Properties of ferroelectric SrBi2Ta2O9-Bi4Ti3O12 thin films derived by the sol-gel method Wang XS, Ishiwara H |
111 - 116 |
Growth and characterization of single crystal of pentachloropyridine Rai RN, Varma KBR |
117 - 122 |
Microstructure control of sputtered Ba2TiSi2O8 films by sol-gel-derived underlayer Zhu MK, Dai WK, Hou YD, Yan H, Xu JB |
123 - 129 |
Growth of large-sized Nd : NY(WO4)(2) crystal and its spectral properties Wang Y, Tu CY, You ZY, Li JF, Zhu ZJ, Jia GH, Lu X, Wu BC |
130 - 136 |
Improvement in the crystalline quality of homoepitaxial diamond films by oxygen plasma etching of mirror-polished diamond substrates Yamamoto M, Teraji T, Ito T |
137 - 145 |
Structure and thermal stability of InAs/GaAs quantum dots grown by atomic layer epitaxy and molecular beam epitaxy Kim HS, Suh JH, Park CG, Lee SJ, Noh SK, Song JD, Park YJ, Choi WJ, Lee JI |
146 - 155 |
Surfactant effect of Sb on GaN growth Gokhale AA, Kuech TF, Mavrikakis M |
156 - 161 |
Flux growth of BiFeO3-PbTiO3 single crystals Burnett TL, Comyn TP, Bell AJ |
162 - 167 |
An application of the molar Gibbs energy diagrams for determining the composition of a growing phase and of its rate of growth Anestiev LA, Malakhov DV |
168 - 177 |
Alizarin crystals: An extreme case of solvent induced morphology change Algra RE, Graswinckel WS, van Enckevort WJP, Vlieg E |
178 - 182 |
Growth and characterization of nonlinear optical L-arginine dihydrate single crystals Mallik T, Kar T |
183 - 190 |
Formation and characterization of europium bisphthalocyanine nanowires by electrophoretic deposition Bai R, Chen HZ, Zhou HB, Shi MM, Wang M |
191 - 200 |
Gadolinium oxide thin films by atomic layer deposition Niinisto J, Petrova N, Putkonen M, Niinisto L, Arstila K, Sajavaara T |
201 - 207 |
Synthesis and characterization of layered niobate K4Nb6O17 thin films by niobium-chelated precursor Zhong T, Tang JL, Zhu MK, Hou YD, Wang H, Yan H |
208 - 214 |
Characterisation of epitaxial TiO2 thin films grown on MgO(001) using atomic layer deposition Mitchell DRG, Attard DJ, Triani G |
215 - 227 |
Crossover from diffusion-limited to kinetics-limited growth of ice crystals Shibkov AA, Zheltov MA, Korolev AA, Kazakov AA, Leonov AA |
228 - 235 |
Nonisothermal study on crystallization kinetics of GeSe2-As2Se3-CdSe chalcogenide glasses by differential scanning calorimeter Zhao DH, Zhang XH, Xia F, Wang H, Ma HL, Adam JL, Chen GR |
236 - 248 |
Measuring dendritic growth in undercooled sucrose solution droplets Hindmarsh JP, Russell AB, Chen XD |
249 - 260 |
Modelling of flash-lamp-induced crystallization of amorphous silicon thin films on glass Smith M, McMahon R, Voelskow M, Panknin D, Skorupa W |
261 - 269 |
Breakdown of Burton Prim Slichter approach and lateral solute segregation in radially converging flows Priede J, Gerbeth G |
270 - 274 |
Growth of La2CaB10O19 single crystals from CaO-Li2O-B2O3 flux Jing FL, Wu YC, Fu PZ |
275 - 283 |
The growth of an epitaxial Mg-Al spinel layer on sapphire by solid-state reactions Liu CM, Chen JC, Chen CJ |
284 - 294 |
MBE growth of beta-FeSi2 epitaxial film on hydrogen terminated Si (111) substrate Ji SY, Lalev GM, Wang JF, Lim JW, Yoo JH, Shindo D, Isshiki M |