1 - 5 |
Fabrication of chestnut bur-like particles covered with ZnO nanowires Lee GH, Jeon HD, Lee WJ, Shin BC, Kim IS |
6 - 12 |
Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE Richter E, Hennig C, Weyers M, Habel F, Tsay JD, Liu WY, Bruckner P, Scholz F, Makarov Y, Segal A, Kaeppeler J |
13 - 20 |
> 100% output differential efficiency 1.55-mu m VCSELs using submonolayer superlattices digital-alloy multiple-active-regions grown by MBE on InP Wang CS, Koda R, Huntington AS, Gossard AC, Coldren LA |
21 - 25 |
Effect of the low-temperature buffer thickness on quality of InSb grown on GaAs substrate by molecular beam epitaxy Wu SD, Guo LW, Li ZH, Shang XZ, Wang W, Huang Q, Zhou JM |
26 - 31 |
Growth and characterization of a-axis textured ZnO thin films Nistor LC, Ghica C, Matei D, Dinescu G, Dinescu M, Van Tendeloo G |
32 - 36 |
Crystal growth and spectral properties of Nd3+: Sr2La0.667(VO4)(2) crystal Zhuang NF, Lin ZB, Hu ZS, Zhang LZ, Wang GF |
37 - 43 |
Detached growth behaviour of 2-in germanium crystals Patzold O, Jenkner K, Scholz S, Croll A |
44 - 50 |
High-quality and crack-free AlxGa1-xN (x similar to 0.2) grown on sapphire by a two-step growth method Shih CF, Keh MY, Wang YN, Chen NC, Chang CA, Chang PH, Liu KS |
51 - 56 |
Defect formation mechanism in beam-induced lateral epitaxy on (111)B GaAs substrate Saitoh K, Suzuki T, Maruyama T, Naritsuka S |
57 - 63 |
Growth of vanadium-doped GaN by MOVPE Souissi M, Bchetnia A, El Jani B |
64 - 71 |
MOCVD growth of GaN islands by multistep nucleation layer technique Lang T, Odnoblyudov M, Bougrov V, Sopanen M |
72 - 77 |
RHEED study of GaAs(331)B surface Yazdanpanah VR, Wang ZM, Seydmohamadi S, Salamo GJ |
78 - 84 |
Composition and thickness distribution of HgCdTe molecular beam epitaxy wafers by infrared microscope mapping Chang Y, Badano G, Jiang E, Garland JW, Zhao J, Grein CH, Sivananthan S |
85 - 90 |
Surface modifications induced by bismuth on (001)GaAs surfaces Jiang WY, Liu JQ, So MG, Myrtle K, Kavanagh KL, Watkins SP |
91 - 96 |
Transient wafer deflection in Si epitaxy Wang TY |
97 - 103 |
In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition Birudavolu S, Luong SQ, Nuntawong N, Xin YC, Hains CP, Huffaker DL |
104 - 113 |
Susceptor honing and contact stress in Si epitaxy Wang TY |
114 - 123 |
Reduced pressure-chemical vapor deposition of high Ge content Si1-xGex and high C content Si1-yCy layers for advanced metal oxide semiconductor transistors Hartmann JM, Bogumilowicz Y, Andrieu F, Holliger P, Rolland G, Billon T |
124 - 132 |
Detached growth of germanium by directional solidification Palosz W, Volz M, Cobb S, Motakef S, Szofran FR |
133 - 137 |
Absence of local-potential fluctuation effects in Si-doped InxGa1-xN epilayers studied by optical characterizations Chung SJ, Kumar MS, Kim YK, Hong CH, Lee H, Suh EK, Jun YK |
138 - 142 |
Investigation of the "composition-pulling or lattice-latching" effect in LPE Rodriguez-Torres MDP, Gorbatchev AY, Mishurnyi VA, de Anda F, Mendez-Garcia VH, Asomoza R, Kudriavtsev Y, Hernandez IC |
143 - 148 |
From Si nanotubes to nanowires: Synthesis, characterization, and self-assembly Qiu T, Wu XL, Mei YF, Wan GJ, Chu PK, Siu GG |
149 - 153 |
Structure and optical properties of MOVPE and HVPE GaN films grown on GaN nanocrystalline powder substrate Nyk M, Kudrawiec R, Misiewicz J, Paszkiewicz R, Korbutowicz R, Kozlowski J, Serafinczuk J, Strek W |
154 - 161 |
Reaction at the interface between Si melt and a Ba-doped silica crucible Huang XM, Koh SJ, Wu KH, Chen MW, Hoshikawa T, Hoshikawa K, Uda S |
162 - 169 |
Regrowth mechanisms in flash lamp processing of heteroepitaxial SiC on silicon substrates Smith M, McMahon RA, Voelskow M, Skorupa W, Stoemenos J |
170 - 174 |
BiSrCaCuO compounds rich in copper synthesized by molecular beam epitaxy structural and electric properties Alami HE, Cavellin CD |
175 - 180 |
Crystal growth and optical properties of Gd1.99-xYxCe.0.01SiO5 single crystals Jie MJ, Zhao GJ, Zeng XH, Su LB, Pang HY, He XM, Xu J |
181 - 185 |
Crystal growth and properties of Yb : FAP laser crystal Song PX, Zhao ZW, Xu XD, Deng PZ, Xu J |
186 - 191 |
Spectral properties and charge transfer luminescence of Yb3+ : Gd3Ga5O12 (Yb : GGG) crystal Jiang BX, Zhao ZW, Xu XD, Song PX, Wang XD, Xu J, Deng PZ |
192 - 199 |
Efficient UV photoluminescence from monodispersed secondary ZnO colloidal spheres synthesized by sol-gel method Cheng HM, Hsu HC, Chen SL, Wu WT, Kao CC, Lin LJ, Hsieh WF |
200 - 204 |
Growth of composite sapphire/Ti : sapphire by the hydrothermal method Song C, Hang Y, Xia C, Zhang C, Xu J, Zhou W |
205 - 209 |
Preparation of BaBi1/2Sb1/2O3 from Ba(COO)(2)center dot 0.5H(2)O and Sb(COO)(2)(OH) oxalates and Bi2O3 oxide Korzun BV, Schorr S, Schmitz W, Fadzeyeva AA, Kommichau G, Bente K |
210 - 217 |
Improved PbZr0.52Ti0.48O3 film quality on SrRuO3/SrTiO3 substrates Contreras JR, Kohlstedt H, Petraru A, Gerber A, Hermanns B, Haselier H, Nagarajan N, Schubert J, Poppe U, Buchal C, Waser R |
218 - 222 |
Microstructure of La0.7Sr0.3MnO3/Ba0.7Sr0.3TiO3/La0.7Sr0.3MnO3 epitaxial films grown on (001)SrTiO3 substrate Qi XY, Miao J, Duan XF, Zhao BR |
223 - 227 |
Growth and characterization of Yb : BaWO4 single crystal Lin XS, Chen JL, Zhuang NF, Zhao B, Chen JZ |
228 - 232 |
Growth and spectral properties of Nd3+ : KLu(WO4)(2) crystal Tang LY, Lin ZB, Hu ZS, Wang GF |
233 - 237 |
Electrical properties of Nd-substituted Bi4Ti3O12 thin films fabricated by chemical solution deposition Zhong XL, Wang JB, Zhou YC, Liu JJ, Zheng XJ |
238 - 245 |
gamma-Fe2O3 oriented growth by surfactant molecules in microemulsion Wang DZ, Cao CB, Xue SH, Zhu HS |
246 - 251 |
Anisotropic electrical transport studies of Ca3Co4O9 single crystals grown by the flux method Bhattacharya S, Aswal DK, Singh A, Thinaharan C, Kulkarni N, Gupta SK, Yakhmi JV |
252 - 257 |
Growth and characterization of (Tm,Y)Al-3(BO3)(4) and (Yb,Y)Al-3(BO3)(4) crystals Leonyuk NI, Koporulina EV, Maltsev VV, Li J, Zhang HJ, Zhang JX, Wang JY |
258 - 263 |
Thermoelectric properties of p-type (Bi2Te3)(x)(Sb2Te3)(1-x) crystals prepared via zone melting Jiang J, Chen LD, Bai SQ, Yao Q, Wang Q |
264 - 268 |
Crystal growth and spectroscopic characterization of Yb-doped and Yb, Na-codoped CaF2 laser crystals by TGT Su LB, Xu J, Li HJ, Wen L, Yang WQ, Zhao ZW, Si JL, Dong YJ, Zhou GQ |
269 - 273 |
Structural and optical properties of Nd : LuVO4 waveguides grown on sapphire substrates by pulsed laser deposition Li HX, Wang JY, Zhang HJ, Yu GW, Wang XX, Fang L, Shen MR, Ning ZY, Tang QW, Li SL, Wang XL, Wang KM |
274 - 283 |
Galvanostatic and potentiostatic deposition of bismuth telluride films from nitric acid solution: effect of chemical and electrochemical parameters Michel S, Diliberto S, Boulanger C, Stein N, Lecuire JM |
284 - 292 |
Transparent conductive ZnO thin films on glass substrates deposited by pulsed laser deposition Shan FK, Liu GX, Lee WJ, Lee GH, Kim IS, Shin BC, Kim YC |
293 - 297 |
Synthesis and magnetic study for Fe-doped carbon nanotubes (CNTs) Liu BY, Wei LW, Ding QM, Yao JL |
298 - 302 |
Growth of large CsB3O5 crystals Chang F, Fu PZ, Wu YC, Chen GJ, Xu ZJ, Chen CT |
303 - 307 |
Growth and characterization of L-argininium dinitrate Thomas PC, Thomas J, Julius JP, Madhavan J, Selvakumar S, Sagayaraj P |
308 - 313 |
Growth and X-ray characterization of GdxYb1-xTaO4 (0 <= x <= 1) single crystals with large lattice spacing gradient Almeida Silva R, Tirao G, Cusatis C, Andreeta JP |
314 - 320 |
The U-shaped Fe(1-x)S micro-slots: growth, characterization, and magnetic property Ma XC, Xu F, Wang X, Du Y, Chen LY, Zhang ZD |
321 - 329 |
Nucleation and growth of ZnO micro- and nanobelts during thermal evaporation Zhang ZQ, Jiang CB, Li SX, Mao SX |
330 - 334 |
Multipod zinc oxide nanowhiskers Xu CX, Sun XW |
335 - 344 |
Oriented [111] ZnSe electrodeposits grown on polycrystalline CdSe substrates Bouroushian M, Kosanovic T, Spyrellis N |
345 - 351 |
Growth of dense ZnO films via MOVPE on GaN(0001) epilayers using a low/high-temperature sequence Pierce JM, Adekore BT, Davis RF, Stevie FA |
352 - 358 |
Growth of Al-doped ZnO thin films by pulsed DC magnetron sputtering Ko H, Tai WP, Kim KC, Kim SH, Suh SJ, Kim YS |
359 - 363 |
Growth of beta barium borate (beta-BaB2O4) thin films on alpha barium borate (alpha-BaB2O4) substrates Liu JF, He XM, Zhou GQ, Xia CT, Zhou SM, Xu J |
364 - 371 |
Epitaxial film growth of zirconium diboride on Si(001) Roucka R, Tolle J, Chizmeshya AVG, Tsong IST, Kouvetakis J |
372 - 377 |
Controlled growth of ZnO by adding H2O Wang HH, Xie CS, Zeng DW |
378 - 381 |
MOCVD growth and properties of ZnO thin films on LiNbO3 substrates Wang YZ, Wang HL, Liu SL, Liu HX, Zhou SM, Hang Y, Xu J, Ye JD, Gu SL, Zhang R |
382 - 387 |
Effects of the film microstructures on CVD diamond radiation detectors Zhang ML, Xia YB, Wang LJ, Gu BB |
388 - 392 |
Improvement of FWHM and luminance of blue organic light-emitting diodes with double hole-blocking structure Lu HT, Tsou CC, Yokoyama M |
393 - 400 |
Zone leveling of lead magnesium niobate-lead titanate crystals using RF heating Zawilski KT, DeMattei RC, Feigelson RS |
401 - 405 |
Growth and spectral properties of Er3+/Yb3+-codoped Sr3Y(BO3)(3) crystal Zhao D, Hua ZS, Lin ZB, Wang GF |
406 - 409 |
Crystal growth and properties of Co2+-doped Ca3NbGa3Si2O14 single crystal Shi XZ, Yuan DR, Guo SY, Cheng XF, Sun HQ, Li ZF, Song JA |
410 - 415 |
Czochralski growth and characterization of neodymium-doped strontium lanthanum aluminate (ASL : Nd) single crystals Gheorghe L, Lupei V, Lupei A, Gheorghe C, Varona C, Loiseau P, Aka G, Vivien D, Ferrand B |
416 - 421 |
The deposition and annealing study of MOCVD ZnMgO Liu W, Gu SL, Zhu SM, Ye JD, Qin F, Liu SM, Zhou X, Hu LQ, Zhang R, Shi Y, Zheng YD |
422 - 427 |
Plasma nitridation and microstructure of high-k ZrO2 thin films fabricated by cathodic arc deposition Huang AP, Fu RKY, Chu PK, Wang L, Cheung WY, Xu JB, Wong SP |
428 - 436 |
Effect of diborane on the microstructure of boron-doped silicon nanowires Pan L, Lew KK, Redwing JM, Dickey EC |
437 - 444 |
Crystal growth orientation and microstructure of Y0.9Ca0.1Ba2Cu3O7-delta melt grown bars Marinel S, Grossin D, Perez O, Delorme F, He ZH, Lu CY |
445 - 449 |
Synthesis of single crystalline cadmium nanosheets by a thermal decomposition method Zhao JW, Ye CH, Fang XS, Yan P, Wang ZY, Zhang L |
450 - 456 |
Preparation of highly (100)-oriented LaNiO3 nanocrystalline films by metalorganic chemical liquid deposition Wang GS, Zhao Q, Meng XJ, Chu JH, Remiens D |
457 - 461 |
Preparation and properties of barium ferrite microcrystal in B2O3-Bi2O3 glass Chen GJ, Jian LY, Chang YS, Chung CY, Chai YL |
462 - 466 |
Substitution site of La ions in La-doped Bi4Ti3O12-SrBi4Ti4O15 intergrowth ferroelectrics Zhu J, Mao XY, Chen XB |
467 - 470 |
Electrochemical properties of submicron cobalt ferrite spinel through a co-precipitation method Yang XH, Xiong W, Zhang Z |
471 - 478 |
Catalyst-free synthesis of ZnO nanowires on Si by oxidation of Zn powders Sekar A, Kim SH, Umar A, Hahn YB |
479 - 484 |
Star-shaped ZnO nanostructures on silicon by cyclic feeding chemical vapor deposition Umar A, Lee S, Lee YS, Nahm KS, Hahn YB |
485 - 489 |
Nucleation and growth of delta-Bi2O3 thin films on c-sapphire by means of chemical vapour deposition under atmospheric pressure Takeyama T, Takahashi N, Nakamura T, Itoh S |
490 - 495 |
ZnO nanostructure networks grown on silicon substrates Xu WZ, Ye ZZ, Zhu LP, Zeng YJ, Liu J, Zhao BH |
496 - 501 |
Epitaxial growth of Er2O3 films on Si(001) Xu R, Zhu YY, Chen S, Xue F, Fan YL, Yang XJ, Jiang ZM |
502 - 508 |
Eu3+ addition effect on the stability and crystallinity of fiber single crystal and nano-structured Y2O3 oxide Flores-Gonzalez MA, Lebbou K, Bazzi R, Louis C, Perriat P, Tillement O |
509 - 517 |
Growth of highly nonlinear optical organic crystal, 3-methyl-4-methoxy-4'-nitrostilbene (MMONS) Hong HK, Park JW, Lee KS, Yoon CS |
518 - 523 |
Shape-controlled synthesis of PbS microcrystallites by mild solvothermal decomposition of a single-source molecular precursor Zhang YC, Qiao T, Hu XY, Wang GY, Wu X |
524 - 528 |
Hydrothermal synthesis of porous Feln(2)S(4) microspheres and their electrochemical properties Chen XY, Zhang ZJ, Zhang XF, Liu JW, Qian YT |
529 - 535 |
The effect of substrate temperature on the optical properties of polycrystalline Sb2O3 thin films Tigau N, Ciupina V, Prodan G |
536 - 540 |
Growth of single crystals of PbBr2 in silica gel Kusumoto H, Kaito T, Yanagiya S, Mori A, Inoue T |
541 - 545 |
A new advance in crystal growth of two-dimensional strontium cuprate-borate Maltsev V, Leonyuk N, Szymczak R |
546 - 554 |
Anomalous evaporation characteristics of vitrificated K(DPM) and stable gas supply using disk-shaped K(DPM) precursors for metalorganic chemical vapor deposition Onoe A, Tasaki Y, Chikuma K |
555 - 559 |
Atomic force microscopy study on surface morphologies of {110} faces of MnHg(SCN)(4) crystals Geng YL, Xu D, Wang YL, Du W, Liu HY, Zhang GH, Wang XQ |
560 - 565 |
The reduction and recovery of step velocity in crystal growth induced by convection variation under various gravities Li CR, Tsukamoto K, Satoh H |
566 - 577 |
Aspects of generation of destructive crystal growth pressure Chatterji S |
578 - 592 |
Nonlinear stability analysis of self-similar crystal growth: control of the Mullins-Sekerka instability Li SW, Lowengrub JS, Leo PH, Cristini V |
593 - 598 |
Pulsed laser deposition of optical waveguide Nd-doped gadolinium vanadate thin films Li HX, Wang JY, Zhang HJ, Wang XX, Yu GW, Zhang JX, Liang F, Shen MR, Jing Y, Li SL, Wang XL, Wang KM |
599 - 607 |
Structure and atoms mixing in electrodeposited Sn(Au) nanoaggregates Kante I, Andreazza P, Andreazza C, Devers T, Allam L, Fleury V |
608 - 622 |
Thermal grain boundary grooving with anisotropic surface free energy in three dimensions Zhang W, Gladwell I |
623 - 630 |
Effects of gravity on zeolite crystallization from solution Song HW, Ilegbusi OJ, Sacco A |
631 - 635 |
Synthesis and characterization of La-2(CO3)(3) nanostructures in the triton X-100/cyclohexane/water reverse inicelles Guo GS, Gu F, Wang ZH, Guo HY |
636 - 642 |
Shape-controlled synthesis of Cu-based nanofluid using submerged arc nanoparticle synthesis system (SANSS) Lo CH, Tsung TT, Chen LC |
643 - 649 |
Preparation and photoluminescence of yttrium hydroxide and yttrium oxide doped with europium nanowires Wu XC, Tao YR, Gao F, Dong L, Hu Z |
650 - 650 |
Erratum to: "Oriented growth of benzophenone crystals from undercooled melts" (vol 270, pg 469, 2004) Wang WL, Huang WD, Ma YH, Zhao JL |