Journal of Crystal Growth

Journal of Crystal Growth, Vol.311, No.12 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (22 articles)

3235 - 3238	Growth and characterization of epitaxial Fe0.8Ga0.2/0.69PMN-0.31PT heterostructures Seguin D, Sunder M, Krishna L, Tatarenko A, Moran PD
3239 - 3242	Defect reduction in nonpolar and semipolar GaN using scandium nitride interlayers Moram MA, Johnston CF, Kappers MJ, Humphreys CJ
3243 - 3248	Initial transient in Zn-doped InSb grown in microgravity Ostrogorsky AG, Marin C, Volz M, Duffar T
3249 - 3251	Improvement of GaInNAsSb films fabricated by atomic hydrogen-assisted molecular beam epitaxy Miyashita N, Ichikawa S, Okada Y
3252 - 3256	Digitally alloyed modulated precursor flow epitaxial growth of AlxGa1-xN layers with AlN and AlyGa1-yN monolayers Choi S, Kim HJ, Ryou JH, Dupuis RD
3257 - 3264	On the Bridgman growth of lead-tin selenide crystals with uniform tin distribution Shtanov VI, Yashina LV
3265 - 3272	Improved morphology for epitaxial growth on 4 degrees off-axis 4H-SiC substrates Leone S, Pedersen H, Henry A, Kordina O, Janzen E
3273 - 3277	Enhancement effect of nitrogen co-doping on oxygen precipitation in heavily phosphorus-doped Czochralski silicon during high-temperature annealing Zeng YH, Chen JH, Ma MY, Wang WY, Yang DR
3278 - 3284	AlN buffer layer growth for GaN epitaxy on (111) Si: Al or N first? Le Louarn A, Vezian S, Semond F, Massies J
3285 - 3288	Nonpolar m- and a-plane GaN thin films grown on gamma-LiAlO2 substrates Zou J, Xiang WD
3289 - 3294	Growth and structure properties of La1-xSrxMnO3-sigma (x=0.2, 0.3, 0.45) thin film grown on SrTiO3 (001) single-crystal substrate by laser molecular beam epitaxy Yang Z, Sun L, Ke C, Chen X, Zhu W, Tan O
3295 - 3299	Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire Johnston CF, Kappers MJ, Moram MA, Hollander J, Humphreys CJ
3300 - 3304	Study on the growth and interfacial strain of CoFe2O4/BaTiO3 bilayer films Zhu J, Zhou LX, Huang W, Li YQ, Li YR
3305 - 3309	Fabrication of UV detectors based on ZnO nanowires using silicon microchannel Kar JP, Das SN, Choi JH, Lee YA, Lee TY, Myoung JM
3310 - 3313	The character of FeMn-1# powder catalyst and its influence on the synthesis of diamond Liu WQ, Ma HA, Han QG, Hu MH, Li R, Zeng MF, Jia X
3314 - 3318	Effect of an applied electric current in epitaxial growth of GaAs layer on patterned GaAs substrate Deivasigamani M, Koyama T, Hayakawa Y
3319 - 3324	Single-crystal growth of Ti-Nb-Ta-Zr-O alloys and measurement of elastic properties Takesue N, Shimizu Y, Yano T, Hara M, Kuramoto S
3325 - 3331	Characterizations of GaN film growth by ECR plasma chemical vapor deposition Fu SL, Chen JF, Zhang HB, Guo CF, Li W, Zhao WF
3332 - 3336	Diamond nanorods from nanocrystalline diamond films Rakha SA, Yu GJ, Zhou XT, Ahmed I, Zhu DZ, Gong JL
3337 - 3346	On favorable thermal fields for detached Bridgman growth Stelian C, Volz MP, Derby JJ
3347 - 3351	Synthesis and ammonia sensing property of Ag3CUS2 nanocages obtained from CU7S4 18-facet hollow nanopolyhedra Chen ZX, Zhang WX, Yang ZH
3352 - 3358	Epitaxial growth of copper oxide films by reactive cross-beam pulsed-laser deposition Seiler W, Millon E, Perriere J, Benzerga R, Boulmer-Leborgne C