| 2171 - 2174 |
Orientation control of GaN {1 1 (2)over-bar 2} and {1 0 (1)over-bar (3)over-bar} grown on (1 0 (1)over-bar 0) sapphire by metal-organic vapor phase epitaxy
Ploch S, Frentrup M, Wernicke T, Pristovsek M, Weyers M, Kneissl M |
| 2175 - 2178 |
Optimisation of the VGF growth process by inverse modelling
Bellmann MP, Patzold O, Stelter M, Moller HJ |
| 2179 - 2184 |
Growth of low defect density GaP layers on Si substrates within the critical thickness by optimized shutter sequence and post-growth annealing
Yamane K, Kawai T, Furukawa Y, Okada H, Wakahara A |
| 2185 - 2189 |
Evolution of ordered one-dimensional and two-dimensional InAs/InP quantum dot arrays on patterned InP (100) and (311)B substrates by self-organized anisotropic strain engineering
Sritirawisarn N, Wera JLE, van Otten FWM, Notzel R |
| 2190 - 2195 |
Growth of epitaxial ZnO films on Si (111) substrates with Cr compound buffer layer by plasma-assisted molecular beam epitaxy
Kim JH, Han SK, Hong SK, Lee JW, Lee JY, Song JH, Hong SI, Yao T |
| 2196 - 2200 |
Investigation of nonpolar (1 1 (2)over-bar 0) a-plane ZnO films grown under various Zn/O ratios by plasma-assisted molecular beam epitaxy
Han SK, Kim JH, Hong SK, Song JH, Song JH, Lee JW, Lee JY, Hong SI, Yao T |
| 2201 - 2205 |
Growth of hexagonal and cubic InN nanowires using MOCVD with different growth temperatures
Yun SH, Ra YH, Lee YM, Song KY, Cha JH, Lim HC, Kim DW, Kissinger NJS, Lee CR |
| 2206 - 2214 |
Preparation, crystal structure, spectrographic characterization, thermal and third order nonlinear optical properties of benzyltriethylamine bis(2-thioxo-1,3-dithiole-4,5-dithiolato)nickel(III)
Wang XQ, Ren Q, Fan HL, Chen JW, Sun ZH, Li TB, Liu XT, Zhang GH, Xu D, Liu WL |
| 2215 - 2219 |
Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
Lee HBR, Kim H |
| 2220 - 2225 |
Structural and infrared properties of zinc oxide film and nanowires
Pung SY, Choy KL, Vinogradov EA, Novikova NN, Yakovlev VA |
| 2226 - 2238 |
The onset of spherulitic growth in crystallization of calcium carbonate
Beck R, Andreassen JP |
| 2239 - 2242 |
Impact of the gas flow ratio on the physical properties of GaN grown by vertical flow metalorganic chemical vapour deposition
Yuan TT, Kuei PY, Hsieh LZ, Li TC, Lin WJ |
| 2243 - 2246 |
Cs2LiGdCl6 (Ce): New scintillation material
Rooh G, Kim HJ, Park H, Kim S |
| 2247 - 2253 |
Model development for deactivation of bisphenol-A adduct particles during crystallization under the influence of impurity
Alamdari A, Nourafkan E, Jahanmiri A |
| 2254 - 2262 |
Fourier analysis based phase shift interferometric tomography for three-dimensional reconstruction of concentration field around a growing crystal
Srivastava A, Tsukamoto K, Yokoyama E, Murayama K, Fukuyama M |
| 2263 - 2266 |
Flux growth and morphology analysis of Na3VO2B6O11 crystals
Fan XY, Pan SL, Hou XL, Tian XL, Han JA |
| 2267 - 2272 |
The effect of solute on ultrasonic grain refinement of magnesium alloys
Qian M, Ramirez A, Das A, StJohn DH |
| 2273 - 2278 |
Growth of epitaxial TmFeCuO4 thin films by pulsed laser deposition
Seki M, Mikami M, Iwamoto F, Ono Y, Osone T, Tabata H |
| 2279 - 2283 |
Shorter wavelength emission with InAs quantum dots growth directly on large bandgap quaternary (In0.68Ga0.32As0.7P0.3) barriers for high current injection efficiency
Mialichi JR, Frateschi NC |
| 2284 - 2290 |
Difficulties in the growth and characterization of non-linear optical materials: A case study of salts of amino acids
Fleck M, Petrosyan AM |
