Journal of Crystal Growth

Journal of Crystal Growth, Vol.312, No.18 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (24 articles)

VII - VII	Proceedings of the 6th International Workshop on Bulk Nitride Semiconductors Galindia, Iznota, Poland 23-28 August 2009 Preface Freitas JA, Grzegory I, Ehrentraut D
2499 - 2502	Recent achievements in AMMONO-bulk method Dwilinski R, Doradzinski R, Garczynski J, Sierzputowski L, Kucharski R, Zajac M, Rudzinski M, Kudrawiec R, Serafinczuk J, Strupinski W
2503 - 2506	Improvement of crystal quality in ammonothermal growth of bulk GaN Hashimoto T, Letts E, Ikari M, Nojima Y
2507 - 2513	Inversion domains and parallel growth in ammonothermally grown GaN crystals Wang B, Suscavage M, Bliss DF, Jimenez J
2514 - 2518	Ammonothermal crystal growth of gallium nitride - A brief discussion of critical issues Ehrentraut D, Fukuda T
2519 - 2521	Growth of AlN single crystalline boules Herro ZG, Zhuang D, Schlesser R, Sitar Z
2522 - 2526	Crystal growth of mixed AlN-SiC bulk crystals Filip O, Bickermann M, Epelbaum BM, Heimann P, Winnacker A
2527 - 2529	Characterization of AlN single crystal fabricated by a novel growth technique, "pyrolytic transportation method" Hironaka K, Nagashima T, Ikeda S, Azuma M, Takada K, Fukuyama H
2530 - 2536	Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE Kumagai Y, Enatsu Y, Ishizuki M, Kubota Y, Tajima J, Nagashima T, Murakami H, Takada K, Koukitu A
2537 - 2541	Hydride vapor phase epitaxy of GaN boules using high growth rates Richter E, Zeimer U, Hagedorn S, Wagner M, Brunner F, Weyers M, Trankle G
2542 - 2550	Enhanced growth rates and reduced parasitic deposition by the substitution of Cl-2 for HCl in GaN HVPE Bohnen T, Ashraf H, van Dreumel GWG, Verhagen S, Weyher JL, Hageman PR, Vlieg E
2551 - 2557	GaN single crystals of different habit grown from solution at near atmospheric pressure Feigelson BN, Hite JK, Garces NY, Freitas JA, Tischler JG, Klein PB
2558 - 2563	Characterization of bulk GaN crystals grown from solution at near atmospheric pressure Garces NY, Feigelson BN, Freitas JA, Kim J, Myers-Ward R, Glaser ER
2564 - 2568	Optical probing of low-pressure solution grown GaN crystal properties Freitas JA, Tischler JG, Garces NY, Feigelson BN
2569 - 2573	Possibility of AlN growth using Li-Al-N solvent Kangawa Y, Kakimoto K
2574 - 2578	Ca3N2 as a flux for crystallization of GaN Bockowski M, Grzegory I, Kchahapuridze A, Gierlotka S, Porowski S
2579 - 2584	Thermodynamics of the Al-Ga-N-2 system Belousov A, Karpinski J, Batlogg B
2585 - 2592	AlxGa1-xN bulk crystal growth: Crystallographic properties and p-T phase diagram Belousov A, Katrych S, Hametner K, Gunther D, Karpinski J, Batlogg B
2593 - 2598	The influence of indium on the growth of GaN from solution under high pressure Grzegory I, Bockowski M, Strak P, Krukowski S, Porowski S
2599 - 2606	Extended defects in bulk GaN and III-nitrides grown on this substrate Liliental-Weber Z
2607 - 2610	The K2S2O8-KOH photoetching system for GaN Weyher JL, Tichelaar FD, van Dorp DH, Kelly JJ, Khachapuridze A
2611 - 2615	Revealing extended defects in HVPE-grown GaN Weyher JL, Lucznik B, Grzegory I, Smalc-Koziorowska J, Paskova T
2616 - 2619	Thick homoepitaxial GaN with low carrier concentration for high blocking voltage Freitas JA, Mastro MA, Imhoff EA, Tadjer MJ, Eddy CR, Kub FJ
2620 - 2623	Vacancy defects in bulk ammonothermal GaN crystals Tuomisto F, Maki JM, Zajac M