Journal of Crystal Growth

Journal of Crystal Growth, Vol.312, No.19 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (35 articles)

2625 - 2630	Stacking faults blocking process in (11-22) semipolar GaN growth on sapphire using asymmetric lateral epitaxy Kriouche N, Vennegues P, Nemoz M, Nataf G, De Mierry P
2631 - 2636	Hydride-assisted growth of GaN nanowires on Au/Si(001) via the reaction of Ga with NH3 and H-2 Zervos M, Othonos A
2637 - 2646	Stacking pattern of multi-layer In As quantum wires embedded in In0.53Ga0.47-xAlxAs matrix layers grown lattice-matched on InP substrate Cui K, Robinson BJ, Thompson DA, Botton GA
2647 - 2655	Influence of hydrogen on structural and optical properties of low temperature polycrystalline Ge films deposited by RF magnetron sputtering Tsao CY, Campbell P, Song DY, Green MA
2656 - 2660	Synthesis and spectrum stability of high quality CdTe quantum dots capped with stearate groups in N-oleoylmorpholine solvent Liu XM, Jiang Y, Wang C, Li SY, Lan XZ, Chen Y, Zhong HH
2661 - 2670	Growth of GaN films on PLD-deposited TaC substrates Kirchner KW, Derenge MA, Zheleva TS, Vispute RD, Jones KA
2671 - 2676	Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane Vincent B, Loo R, Vandervorst W, Brammertz G, Caymax M
2677 - 2682	In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method Rajesh G, Arivanandhan M, Morii H, Aoki T, Koyama T, Momose Y, Tanaka A, Ozawa T, Inatomi Y, Hayakawa Y
2683 - 2688	Growth of GaN based structures on Si(110) by molecular beam epitaxy Cordier Y, Moreno JC, Baron N, Frayssinet E, Chauveau JM, Nemoz M, Chenot S, Damilano B, Semond F
2689 - 2694	Influence of deposition conditions on nanocrystalline InN layers synthesized on Si(111) and GaN templates by RF sputtering Valdueza-Felip S, Naranjo FB, Gonzalez-Herraez M, Lahourcade L, Monroy E, Fernandez S
2695 - 2698	MBE growth of PbSe thin film with a 9 x 10(5) cm(-2) etch-pits density on patterned (111)-oriented Si substrate Zhao F, Ma J, Weng B, Li D, Bi G, Chen A, Xu J, Shi Z
2699 - 2704	AlN bulk single crystal growth on 6H-SiC substrates by sublimation method Nagai I, Kato T, Miura T, Kamata H, Naoe K, Sanada K, Okumura H
2705 - 2709	Near band edge optical absorption and photoluminescence dynamics in bulk InAsN dilute-nitride materials Wang D, Svensson SP, Shterengas L, Belenky G
2710 - 2717	The influences of O/Zn ratio and growth temperature on carbon impurity incorporation in ZnO grown by metal-organic chemical vapor deposition Liu JG, Gu SL, Zhu SM, Tang K, Liu XD, Chen H, Zheng YD
2718 - 2723	Growth and characterization of near-band-edge transitions in beta-In2S3 single crystals Ho CH
2724 - 2728	Template-based fabrication of Ag-ZnO core-shell nanorod arrays Chatterjee S, Jayakumar OD, Tyagi AK, Ayyub P
2729 - 2733	Gel growth of alpha and gamma glycine and their characterization Sankar S, Manikandan MR, Ram SDG, Mahalingam T, Ravi G
2734 - 2739	Simulation of metastable zone width and induction time for a seeded aqueous solution of potassium sulfate Kobari M, Kubota N, Hirasawa I
2740 - 2746	Nucleation kinetics of paracetamol-ethanol solutions from metastable zone widths Mitchell NA, Frawley PJ
2747 - 2755	Crystallization of zinc lactate in presence of malic acid Zhang XY, Fevotte G, Zhong LA, Qian G, Zhou XG, Yuan WK
2756 - 2763	Effect of precipitation procedure and detection technique on particle size distribution of CaCO3 Martos C, Coto B, Pena JL, Rodriguez R, Merino-Garcia D, Pastor G
2764 - 2770	The effect of solvent ratio and water on the growth of C-60 nanowhiskers Miyazawa K, Hotta K
2771 - 2774	Estimated effects of silicone glue on protein crystal growth Maruyama M, Shimizu N, Sugiyama S, Takahashi Y, Adachi H, Takano K, Murakami S, Inoue T, Matsumura H, Mori Y
2775 - 2778	Mixed-phase solidification of thin Si films on SiO2 Im JS, Chahal M, van der Wilt PC, Chung UJ, Ganot GS, Chitu AM, Kobayashi N, Ohmori K, Limanov AB
2779 - 2782	Flux growth and characterizations of NdPO4 single crystals Wang YZ, Li J, Wang JY, Han SJ, Guo YJ
2783 - 2787	Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities Taishi T, Ise H, Murao Y, Osawa T, Suezawa M, Tokumoto Y, Ohno Y, Hoshikawa K, Yonenaga I
2788 - 2794	The morphology and electromagnetic properties of MnO2 obtained in 8 T high magnetic field Zhang J, Duan YP, Jing H, Li XG, Liu SH
2795 - 2798	Crystal growth and luminescent properties of Pr-doped K(Y,Lu)(3)F-10 single crystal for scintillator application Kamada K, Yanagida T, Nikl M, Fukabori A, Yoshikawa A, Aoki K
2799 - 2803	Growth and microstructural features of laser ablated LiCoO2 thin films Rao MC
2804 - 2813	Template free-solvothermaly synthesized copper selenide (CuSe, Cu2-xSe, beta-Cu2Se and Cu2Se) hexagonal nanoplates from different precursors at low temperature Kumar P, Singh K, Srivastava ON
2814 - 2822	Control of multi-zone resistive heater in low temperature gradient BGO Czochralski growth with a weighing feedback, based on the global dynamic heat transfer model Mamedov VM, Vasiliev MG, Yuferev VS, Pantsurkin D, Shlegel VN, Vasiliev YV
2823 - 2827	Thermogravimetric analysis and microstructural observations on the formation of GaN from the reaction between Ga2O3 and NH3 Kiyono H, Sakai T, Takahashi M, Shimada S
2828 - 2833	Growth of EuTe islands on SnTe by molecular beam epitaxy Diaz B, Malachias A, Rappl PHO, Abramof E, Chitta VA, Henriques AB
2834 - 2839	Variation of crystallization mechanisms in flash-lamp-irradiated amorphous silicon films Ohdaira K, Nishikawa T, Matsumura H
2840 - 2845	Growth and interface study of 2 in diameter CdZnTe by THM technique Roy UN, Weiler S, Stein J