Journal of Crystal Growth

Journal of Crystal Growth, Vol.288, No.2 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (15 articles)

217 - 217	Proceedings of the second ONR - International Indium Nitride Workshop -9-13 January 2005 - Kailua-Kona, Hawaii - Preface Butcher KSA
218 - 224	InN: A material with photovoltaic promise and challenges Trybus E, Namkoong G, Henderson W, Burnham S, Doolittle WA, Cheung M, Cartwright A
225 - 229	Zincblende and wurtzite phases in InN epilayers and their respective band transitions Specht P, Ho JC, Xu X, Armitage R, Weber ER, Erni E, Kisielowski C
230 - 235	Surface-plasmon resonances in indium nitride with metal-enriched nano-particles Shubina TV, Plotnikov DS, Vasson A, Leymarie J, Larsson M, Holtz PO, Monemar B, Lu H, Schaff WJ, Kop'ev PS
236 - 240	Compositional and structural characterization of indium nitride using swift ions Timmers H, Butcher KSA, Shrestha SK, Chen PPT, Wintrebert-Fouquet M, Dogra R
241 - 246	Apparent band-gap shift in InN films grown by remote-plasma-enhanced CVD Chen PPT, Butcher KSA, Wintrebert-Fouquet M, Wuhrer R, Phillips MR, Prince KE, Timmers H, Shrestha SK, Usher BF
247 - 253	The effects of AlN buffer on the properties of InN epitaxial films grown on Si(111) by plasma-assisted molecular-beam epitaxy Wu CL, Shen CH, Chen HY, Tsai SJ, Lin HW, Lee HM, Gwo S, Chuang TF, Chang HS, Hsu TM
254 - 260	Growth of InN films by RF plasma-assisted MBE and cluster beam epitaxy Chen TCP, Thomidis C, Abell J, Li W, Moustakas TD
261 - 267	Energy band gap and optical properties of non-stoichiometric InN -theory and experiment Alexandrov D, Butcher KSA, Tansley TL
268 - 272	Inversion and accumulation layers at InN surfaces Veal TD, Piper LFJ, Schaff WJ, McConville CF
273 - 277	Critical points of the band structure and valence band ordering at the Gamma point of wurtzite InN Goldhahn R, Schley P, Winzer AT, Rakel M, Cobet C, Esser N, Lu H, Schaff WJ
278 - 282	Dopants and defects in InN and InGaN alloys Waluklewicz W, Jones RE, Li SX, Yu KM, Ager JW, Haller EE, Lu H, Schaff W
283 - 288	Growth of high-quality In-rich InGaN alloys by RF-MBE for the fabrication of InN-based quantum well structures Naoi H, Kurouchi M, Muto D, Araki T, Miyajima T, Nanishi Y
289 - 293	Optical studies of high-field carrier transport of InN thick film grown on GaN Tsen KT, Poweleit C, Ferry DK, Lu H, Schaff WJ
294 - 297	Nonparabolicity and excitons in optical absorption of InN Bechstedt F, Furthmuller J, Hahn PH, Fuchs F