Journal of Crystal Growth

Journal of Crystal Growth, Vol.305, No.2 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (19 articles)

303 - 303	Proceedings of the 4th International Workshop on Bulk Nitride Semiconductors IV, October 17-22, 2006, Makino, Shiga, Japan - Preface Freitas JA, Hanser D, Koukitu A
304 - 310	Prospects for the ammonothermal growth of large GaN crystal Fukuda T, Ehrentraut D
311 - 316	Seeded growth of GaN by the basic ammonothermal method Hashimoto T, Saito M, Fujito K, Wu F, Speck JS, Nakamura S
317 - 325	Similarities and differences in sublimation growth of SiC and AlN Epelbaum BM, Bickermann M, Nagata S, Heimann P, Filip O, Winnacker A
326 - 334	Study on the kinetics of the formation reaction of GaN from Ga-solutions under ammonia atmosphere Sun G, Meissner E, Berwian P, Muller G, Friedrich J
335 - 339	HVPE growth of AlxGa1-xN ternary alloy using AlCl3 and GaCl Koukitu A, Satoh F, Yamane T, Murakami H, Kumagai Y
340 - 345	Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates Storm DF, Katzer DS, Roussos JA, Mittereder JA, Bass R, Binari SC, Zhou L, Smith DJ, Hanser D, Preble EA, Evans KR
346 - 354	Role of dislocation-free GaN substrates in the growth of indium containing optoelectronic structures by plasma-assisted MBE Skierbiszewski C, Siekacz M, Perlin P, Feduniewicz-Zmuda A, Cywinski G, Grzegory I, Leszczyniski M, Wasilewski ZR, Porowski S
355 - 359	Improvement of AlN crystalline quality with high epitaxial growth rates by hydride vapor phase epitaxy Nagashima T, Harada M, Yanagi H, Fukuyama H, Kumagai Y, Koukito A, Takada K
360 - 365	Al- and N-polar AlN layers grown on c-plane sapphire substrates by modified flow-modulation MOCVD Takeuchi M, Shimizu H, Kajitani R, Kawasaki K, Kinoshita T, Takada K, Murakami H, Kumagai Y, Koukitu A, Koyama T, Chichibu SF, Aoyagi Y
366 - 371	Polarity dependence of AlN {0001} decomposition in flowing H-2 Kumagai Y, Akiyama K, Togashi R, Murakami H, Takeuchi M, Kinoshita T, Takada K, Aoyagi Y, Koukitu A
372 - 376	Surface preparation of substrates from bulk GaN crystals Hanser D, Tutor M, Preble E, Williams M, Xu XP, Tsvetkov D, Liu LH
377 - 383	Dislocation reduction in GaN crystal by advanced-DEEP Motoki K, Okahisa T, Hirota R, Nakahata S, Uematsu K, Matsumoto N
384 - 392	Orthodox etching of HVPE-grown GaN Weyher JL, Lazar S, Macht L, Liliental-Weber Z, Molnar RJ, Muller S, Sivel VGM, Nowak G, Grzegory I
393 - 398	Residual impurities in GaN substrates and epitaxial layers grown by various techniques Murthy M, Freitas JA, Kim J, Glaser ER, Storm D
399 - 402	III-nitride crystal growth from nitride-salt solution Feigelson BN, Frazier RM, Twigg M
403 - 407	Properties of Fe-doped semi-insulating GaN substrates for high-frequency device fabrication Freitas JA, Tischler JG, Kim JH, Kumagai Y, Koukitu A
408 - 413	Linear optical response of zinc-blende and wurtzite III-N (III = B, Al, Ga, and In) Persson C, da Silva AF
414 - 420	Platelets and needles: Two habits of pressure-grown GaN crystals Bockowski M, Grzegory I, Kamler G, Lucznik B, Krukowski S, Wroblewski M, Kwiatkowski P, Jasik K, Porowski S