Journal of Crystal Growth

Journal of Crystal Growth, Vol.234, No.2-3 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (52 articles)

279 - 284	Antisite incorporation during epitaxial growth of GaAs Gandouzia M, Bourgoin JC, El Mir L, Stellmacher M, Ortiz V
285 - 295	Transient convection of Te doped GaSb induced by g-jitter Saghir MZ, Chacha M, Islam MR
296 - 304	Relationship between characteristics of defects in CZ-Si crystals and V/G ratios by multi-chroic infrared light scattering tomography Ma M, Irisawa T, Ogawa T, Huang XM, Taishi T, Hoshikawa K
305 - 310	Growth of crack-ftee AlGaN film on high-temperature thin AlN interlayer Lee IH, Kim TG, Park Y
311 - 317	Growth of Cd((1-chi))Zn chi Te epitaxial layers by isothermal closed space sublimation Tobenas S, Larramendi EM, Puron E, de Melo O, Cruz-Gandarilla F, Hesiquio-Garduno M, Tamura M
318 - 322	Incorporation of nitrogen into GaAsN grown by MOCVD using different precursors Kurtz S, Reedy R, Barber GD, Geisz JF, Friedman DJ, McMahon WE, Olson JM
323 - 326	Evaluation of NF3 versus dimethylhydrazine as N sources for GaAsN Kurtz S, Reedy R, Keyes B, Barber GD, Geisz JF, Friedman DJ, McMahon WE, Olson JM
327 - 336	Time dependent surfactant effects on growth of GaInP heterostructures by organometallic vapor phase epitaxy Shurtleff JK, Lee RT, Fetzer CM, Stringfellow GB, Lee S, Seong TY
337 - 342	Dislocation assessment of CdZnTe by chemical etching on both {111}B and {211}B faces Yang JR, Gu HM, Chen XQ, Fang WZ, He L
343 - 348	The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using As-4 molecules Foxon CT, Harrison I, Novikov SV, Li T, Campion RP, Staddon CR, Davis CS, Winser AJ, Kovarsky AP, Ber BJ
349 - 353	Growth of bulk AlN crystals by vaporization of aluminum in a nitrogen atmosphere Schlesser R, Sitar Z
354 - 358	Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots Jia R, Jiang DS, Liu HY, Wei YQ, Xu B, Wang ZG
359 - 363	(Ga,Mn,As) compounds grown on semi-insulating GaAs with mass-analyzed low energy dual ion beam depositionw Yang JL, Chen NF, Liu ZK, Yang SY, Chai CL, Liao MY, He HJ
364 - 368	InAsyP1-y/InP quantum wells grown by solid source molecular beam epitaxy using As-2 and As-4 Hao ZB, Ren ZY, Xiong B, Guo WP, Luo Y
369 - 372	Homoepitaxy of 6H-SiC by solid-source molecular beam epitaxy using C-60 and Si effusion cells Lampert WV, Eiting CJ, Smith SA, Mahalingam K, Grazulis L, Haas TW
373 - 378	Structural and optical properties of organometallic vapor phase epitaxial grown CdSe epilayers on (001) InP and (001) GaAs substrates Zhang XB, Hark SK
379 - 383	Low temperature photoluminescence of InAs self-organized quantum dots on (001) InP substrate with GaAs interlayer Wang XQ, Dua GT, Yin JZ, Li M, Li MT, Qu Y, Bo BX, Yang SR
384 - 390	Structural characterisation of Al grown on group III-nitride layers and sapphire by molecular beam epitaxy Brown PD, Fay M, Bock N, Marlafeka S, Cheng TS, Novikov SV, Davis CS, Campion RP, Foxon CT
391 - 398	Self-assembled InAs quantum dots on InP nano-templates Lefebvre J, Poole PJ, Fraser J, Aers GC, Chithrani D, Williams RL
399 - 403	Observation of carbon clusters of a few nanometers in the oxyacetylene diamond CVD process Ahn HS, Park HM, Kim DY, Hwang NM
404 - 410	Influence of polarized PZT on the crystal growth of calcium phosphate Sun XD, Ma CL, Wang Y, Li HD
411 - 414	Crystal growth, structure and magnetic behavior of ytterbium cobalt gallium oxide YbCoGaO4 Dabkowska HA, Dabkowski A, Luke GM, Gaulin BD
415 - 420	Crystal growth and electrical properties of Pb(Yb1/2Nb1/2)O-3-PbTiO3 perovskite single crystals Zhang SJ, Rehrig PW, Randall C, Shrout TR
421 - 426	Brush plating of tin(II) selenide thin films Subramanian B, Sanjeeviraja C, Jayachandran M
427 - 430	Structural and optical properties of Mg chi Zn1-chi O thin films prepared by the sol-gel method Zhao DX, Liu YC, Shen DZ, Lu YM, Zhang JY, Fan XW
431 - 434	Floating zone growth of LaB6 crystals from the CaB6-added feed rods Otani S, Aizawa T, Yajima Y
435 - 439	Growth of AlN-SiC solid solutions by sequential supply epitaxy Avramescu A, Hirayama H, Aoyagi Y, Tanaka S
440 - 446	Preparation and properties of TiSi2 thin films from TiCl4/H-2 by plasma enhanced chemical vapor deposition Fouad OA, Yamazato M, Era M, Nagano M, Hirai T, Usui I
447 - 453	Epitaxial growth of dhcp samarium: single crystal films and Sm/Nd superlattices Dufour C, Dumesnil K, Soriano S, Pierre D, Senet C, Mangin P
454 - 458	Crystallization behavior of ferroelectric YMnO3 thin films on Si(100) substrates Yoo DC, Lee JY, Kim IS, Kim YT
459 - 462	Catalytic effect of Ni for activation of Mg-doped GaN in N-2 and N2O Waki I, Fujioka H, Oshima M, Miki H, Okuyama M
463 - 468	Growth and characterization of Tm, Ho-codoped Lu3Al5O12 single crystals by the Czochralski technique Sato H, Shimamura K, Sudesh V, Ito M, Machida H, Fukuda T
469 - 479	Growth and characterization of a novel UV nonlinear optical crystal: [MnHg(SCN)(4)(H2O)(2)] center dot 2C(4)H(9)NO Wang XQ, Xu D, Lu MK, Yuan DR, Huang J, Cheng XF, Xie TX, Zhang GH, Wang SL, Guo SY, Liu JR, Yang ZH, Wang P
480 - 486	Ex situ atomic force microscopy studies of growth mechanisms of cadmium mercury thiocyanate crystals Jiang XN, Xu D, Sun DL, Yuan DR, Lu MK, Guo SY, Zhang GH
487 - 497	Crystal growth of HgZnTe alloy by directional solidification in low gravity environment Su CH, Sha YG, Lehoczky SL, Szofran FR, Gillies DC, Scripa RN, Cobb SD, Wang JC
498 - 504	Surface chemistry of non-stoichiometric TiNx films grown on (100)Si substrate by DC reactive magnetron sputtering Lee YK, Kim JY, Lee YK, Lee MS, Kim DK, Jin DY, Nam TH, Ahn HJ, Park DK
505 - 508	Growth dynamics of the epitaxial SrO film on SrTiO3(001) Takahashi R, Matsumoto Y, Ohsawa T, Lippmaa M, Kawasaki M, Koinuma H
509 - 515	Distinctly different two-dimensional ordering alignments of InGaAs island arrays on GaAs(311)B and AlGaAs(311)B surfaces Xu HZ, Akahane K, Song HZ, Okada Y, Kawabe M
516 - 522	In situ observation of the Marangoni convection in a NaCl aqueous solutions under microgravity Sazaki G, Miyashita S, Nokura M, Ujihara T, Fujiwara K, Usami N, Nakajima K
523 - 528	Correlation of KH2PO4 hillock chirality with absolute structure Kaminsky W, Haussuhl E, Bastin LD, Subramony JA, Kahr B
529 - 532	Crystal growth of a new hybrid nonlinear optical compound [(18C6)K][Cd(SCN)(3)] from aqueous solution Zhang H, Zelmon DE
533 - 538	Flux growth of baryte-type BaSO4 from chloridic alkaline metal solvents Ehrentraut D, Pollnau M
539 - 544	Effects of the Ca2+ and PO43- ion flow on the lengthwise growth of octacalcium phosphate in a model system of enamel crystal formation with controlled ionic diffusion Iijima M, Hayashi K, Moriwaki Y
545 - 550	Effect of rare-earth dopants on the growth and properties of triglycine sulphate single crystals Muralidharan R, Mohankumar R, Ushasree PM, Jayavel R, Ramasamy P
551 - 560	A quantitative estimation of purity and yield of crystalline layers concerning sweating operations Kim KJ, Ulrich J
561 - 568	Investigation of platinum films grown on sapphire (0001) by molecular beam epitaxy Zhou H, Wochner P, Schops A, Wagner T
569 - 583	Factors influencing the preparation of mullite coatings from metal chloride mixtures in CO2 and H-2 Sotirchos SV, Nitodas SF
584 - 588	Growth orientation of carbon nanotubes by thermal chemical vapor deposition Zhu S, Su CH, Cochrane JC, Lehoczky S, Cui Y, Burger A
589 - 598	Pyramids on {100} NaCl after formamide etching Radenovic N, van Enckevort W
599 - 602	Spontaneous generation of charged clusters of a few nanometers during thermal evaporation of copper Lee BS, Barnes MC, Kim DY, Hwang NM
603 - 609	A new mechanism for misfit dislocation generation: superdislocations associated with Ruddlesden-Popper planar defects Wu JS, Jia CL, Urban K, Hao JH, Xi XX
610 - 610	Effects of pressure on growth kinetics of tetragonal lysozyme crystals (vol 208, pg 638, 2000) Suzuki Y, Miyashita S, Sazaki G, Nakada T, Sawada T, Komatsu H