Journal of Crystal Growth

Journal of Crystal Growth, Vol.310, No.23 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (124 articles)

4709 - 4709	The 14th International conference on Metalorganic Vapor Phase Epitax ICMOVPE-XIV introduction Mullin B, Irvine S, Scholz F, Ougazzaden A
4710 - 4711	Contributing people to ICMOVPE XIV [Anonymous]
4712 - 4714	Development and characterisation of improved ruthenium dopant sources Rushworth S, Odedra R, Viswanathan P, Dosanjh S, Lealman I
4715 - 4719	Tailor-made precursors for the deposition of Sb-containing materials by the MOCVD process Schuchmann D, Schwartz M, Schulz S, Seemayer A, Wandelt K
4720 - 4723	Vapor pressure of germanium precursors Pangrac J, Fulem M, Hulicius E, Melichar K, Simecek T, Ruzicka K, Moravek P, Ruzicka V, Rushworth SA
4724 - 4726	Novel technique for monitoring of MOVPE processes Volkov PV, Goryunov AV, Daniltsev VM, Luk'yanov AY, Pryakhin DA, Tertyshnik AD, Khrykin OI, Shashkin VI
4727 - 4730	In-situ monitoring of the p- and n-type doping in AlGaInP Krahmer C, Behres A, Schubert M, Streubel K
4731 - 4735	Non-linear surface reaction kinetics in GaAs selective area MOVPE Song HZ, Wang YP, Sugiyama M, Nakano Y, Shimogaki Y
4736 - 4740	Kinetic analysis of surface adsorption layer for InGaAsP-related binary materials using in situ RAS Deura M, Shimogaki Y, Nakano Y, Sugiyama M
4741 - 4746	Micro-Raman for compositions characterization of selective area growth of AlxGayIn1-x-yAs materials by metal-organic vapor-phase epitaxy Hamady SOS, Dupuis N, Decobert J, Ougazzaden A
4747 - 4750	Influence of growth parameters on the sub-bandgap absorption of MOVPE-grown GaN measured using photothermal deflection spectroscopy Lobo N, Kadir A, Laskar MR, Shah AP, Gokhale MR, Rahman AA, Arora BM, Narasimhan KL, Bhattacharya A
4751 - 4753	Ripening of InAs quantum dots on GaAs (001) investigated with in situ scanning tunneling microscopy in metal-organic vapor phase epitaxy Kremzow R, Pristovsek M, Kneissl M
4754 - 4756	In-situ etching of GaAs/AlxGa1-xAs by CBr4 Maassdorf A, Weyers M
4757 - 4762	III-V epitaxy on Si for photonics applications Yonezu H, Furukawa Y, Wakahara A
4763 - 4767	Ways to quantitatively detect antiphase disorder in GaP films grown on Si(001) by transmission electron microscopy Nemeth I, Kunert B, Stolz W, Volz K
4768 - 4771	Effect of Ga content on crystal shape in micro-channel selective-area MOVPE of InGaAs on Si Deura M, Hoshii T, Takenaka M, Takagi S, Nakano Y, Sugiyama M
4772 - 4775	Growth of InAs on Si substrates at low temperatures using metalorganic vapor phase epitaxy Jha S, Song XY, Babcock SE, Kuech TF, Wheeler D, Wu B, Fay P, Seabaugh A
4776 - 4779	Monolithic integration of Ga(NAsP)/(BGa)P multi-quantum well structures on (001) silicon substrate by MOVPE Kunert B, Zinnkann S, Volz K, Stolz W
4780 - 4785	Characterization of high-purity arsine and gallium arsenide epilayers grown by MOCVD Feng J, Clement R, Raynor M
4786 - 4789	Ambience effects in annealing on improvements of optical properties of GaInNAs/GaAs single quantum wells Ishizuka T, Doi H, Shimazu M, Takagishi S, Yaginuma R, Nakayama M
4790 - 4794	Isoelectronic nitrogen delta-doping in GaP and single-photon emission from individual nitrogen pairs Sakuma Y, Ikezawa M, Watanabe M, Masumoto Y
4795 - 4798	Demonstration of planar thick InP layers by selective MOVPE Dupuis N, Decobert J, Lagree PY, Lagay N, Carpentier D, Alexandre F
4799 - 4802	Memory effect of Ge in III-V semiconductors Welser E, Guter W, Wekkeli A, Dimroth F
4803 - 4807	Analysis of germanium epiready wafers for III-V heteroepitaxy Rey-Stolle I, Barrigon E, Galiana B, Algora C
4808 - 4812	In situ passivation of GaAs surface with aluminum oxide with MOVPE Terada Y, Deura M, Shimogaki Y, Sugiyama M, Nakano Y
4813 - 4817	Optically in-situ monitored growth of carbon doped InAlAs by LP-MOVPE using CBr4 Decobert J, Lagay N, Thevenard B
4818 - 4820	Increased single-photon emission from InP/AlGaInP quantum dots grown on AlGaAs distributed Bragg reflectors Rossbach R, Schulz WM, Reischle M, Beirne GJ, Jetter M, Michler R
4821 - 4825	InxGa1-xAs/InP selective area metal-organic vapor phase epitaxy for non-magnetic semiconductor spintronics Akabori M, Guzenko VA, Schapers T, Hardtdegen H
4826 - 4830	MOVPE growth of antimonide-containing alloy materials for long wavelength applications Kuech TF, Khandekar AA, Rathi M, Mawst LJ, Huang JYT, Song XY, Babcock SE, Meyer JR, Vurgaftman I
4831 - 4834	Characterization of GaSb thin films from tailor-made single-source precursors Seemayer A, Hommes A, Humann S, Schulz S, Wandelt K
4835 - 4838	Growth of various antimony-containing alloys by MOVPE Grasse C, Meyer R, Breuer U, Bohm G, Amann MC
4839 - 4842	MOVPE growth of Ga(As)SbN on GaSb substrates Huang JYT, Mawst LJ, Jha S, Kuech TF, Wang D, Shterengas L, Belenky G, Meyer JR, Vurgaftman I
4843 - 4845	Dislocation reduction of GaSb on GaAs by metalorganic chemical vapor deposition with epitaxial lateral overgrowth Zaima K, Hashimoto R, Ezaki M, Nishioka M, Arakawa Y
4846 - 4849	Type II GaAsxSb1-x/InAs (x < 0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution Moiseev KD, Romanov VV, Voronina TI, Lagunova TS, Mikhailova MP, Yakovlev YP
4850 - 4853	Temperature effect on the growth of strained GaAs1-ySby/GaAs (y > 0.4) quantum wells by MOVPE Su YK, Wan CT, Chuang RW, Huang CY, Chen WC, Wang YS, Yu HC
4854 - 4857	Improving photoluminescence of highly strained 1.32 mu m GaAsSb/GaAs multiple quantum wells grown on misorientation substrate Wan CT, Su YK, Chuang RW, Huang CY, Wang YS, Chen WC, Yu HC
4858 - 4861	Growth of InAsSb/InPSb heterojunctions for mid-IR detector applications Pitts OJ, Lackner D, Cherng YT, Watkins SP
4862 - 4866	Hydrogen effects in III-nitride MOVPE Yakovlev EV, Talalaev RA, Segal AS, Lobanova A, Lundin WV, Zavarin EE, Sinitsyn MA, Tsatsulnikov AF, Nikolaev AE
4867 - 4870	Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited SiNx masks Hertkorn J, Lipski F, Bruckner R, Wunderer T, Thapa SB, Scholz F, Chuvilin A, Kaiser U, Beer M, Zweck J
4871 - 4875	High-reflectivity ultraviolet AlN/AlGaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition Chen JR, Ling SC, Hung CT, Ko TS, Lu TC, Kuo HC, Wang SC
4876 - 4879	The influence of substrate surface preparation on LP MOVPE GaN epitaxy on differently oriented 4H-SiC substrates Caban P, Kosciewicz K, Strupinski W, Wojcik M, Gaca J, Szmidt J, Ozturk M, Ozbay E
4880 - 4884	Modulated precursor flow epitaxial growth of ternary AlGaN by metalorganic chemical vapor deposition Kim HJ, Choi S, Yoo D, Ryou JH, Dupuis RD
4885 - 4887	Growth of crack-free AlGaN on selective-area-growth GaN Miyake H, Masuda N, Ogawahara Y, Narukawa M, Hiramatsu K, Ezaki T, Kuwano N
4888 - 4890	Growth and characterization of unintentionally doped GaN grown on silicon(111) substrates Leys M, Cheng K, Derluyn J, Degroote S, Germain M, Borghs G, Taylor CA, Dawson P
4891 - 4895	Properties of MOVPE GaN grown on ZnO deposited on Si(001) and Si(111) substrates Paszkiewicz R, Paszkiewicz B, Wosko M, Szyszka A, Marciniak L, Prazmowska J, Macherzynski W, Serafinczuk J, Kozlowski J, Tlaczala M, Kovac J, Novotny I, Skriniarova J, Hasko D
4896 - 4899	Comparison of electrical properties in GaN grown on Si(111) and c-sapphire substrate by MOVPE Ito T, Nomura Y, Selvaraj SL, Egawa T
4900 - 4903	MOCVD growth of GaN on porous silicon substrates Ishikawa H, Shimanaka K, Tokura F, Hayashi Y, Hara Y, Nakanishi M
4904 - 4907	MOVPE growth of AlGaN/GaN superlattices on ZnO substrates for green emitter applications Yu HB, Wang SJ, Li NL, Fenwick W, Melton A, Klein B, Ferguson I
4908 - 4912	Effect of an Al2O3 transition layer on InGaN on ZnO substrates by organometallic vapor-phase epitaxy Li NL, Wang SJ, Huang CL, Feng ZC, Valencia A, Nause J, Summers C, Ferguson I
4913 - 4915	The critical thickness of InGaN on (0001)GaN Leyer M, Stellmach J, Meissner C, Pristovsek M, Kneissl M
4916 - 4919	Emission and microstructural behaviors in the InGaN/GaN MQWs with the p-GaN layers grown at different growth temperatures Kong BH, Han WS, Cho HK, Kim MY, Choi RJ, Kim BK
4920 - 4922	Control of stress and crystalline quality in GaInN films used for green emitters Iwaya M, Miura A, Senda R, Nagai T, Kawashima T, Iida D, Kamiyama S, Amano H, Akasaki I
4923 - 4926	Strain compensated AlGaN/GaN-Bragg-reflectors with high Al content grown by MOVPE Dartsch H, Figge S, Aschenbrenner T, Pretorius A, Rosenauer A, Hommel D
4927 - 4931	AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas Gautier S, Aggerstam T, Pinos A, Marcinkevicius S, Liu K, Shur M, O'Malley SM, Sirenko AA, Djebbour Z, Migan-Dubois A, Moudakir T, OLIgazzaden A
4932 - 4934	Effect of the AIN nucleation layer growth on AlN material quality Reentila O, Brunner F, Knauer A, Mogilatenko A, Neumann W, Protzmann H, Heuken M, Kneissl M, Weyers M, Traaenkle G
4935 - 4938	Growth conditions and surface morphology of AlN MOVPE Lobanova AV, Yakovlev EV, Talalaev RA, Thapa SB, Scholz F
4939 - 4941	Growth and studies of Si-doped AlN layers Thapa SB, Hertkorn J, Scholz F, Prinz GM, Leute RAR, Feneberg M, Thonke K, Sauer R, Klein O, Biskupek J, Kaiser U
4942 - 4946	Microstructure of InN epilayers deposited in a close-coupled showerhead reactor Ganguli T, Kadir A, Gokhale M, Kumar R, Shah AP, Arora BM, Bhattacharya A
4947 - 4953	Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77 eV) InN grown on GaN/sapphire using pulsed MOVPE Jamil M, Zhao HP, Higgins JB, Tansu N
4954 - 4958	Improvements in the crystalline quality of MOVPE-InN layers by facet controlling with hydrogen partial pressure Murakami H, Cho HC, Kumagai Y, Koukitu A
4959 - 4962	Indium nitride quantum dot growth modes in metalorganic vapour phase epitaxy Meissner C, Ploch S, Leyer M, Pristovsek M, Kneissl M
4963 - 4967	Metal-organic molecular beam epitaxy growth of InN films on highly orientated TCO/Si(100) substrates Kuo SY, Chen WC, Hsiao CN, Lai FI
4968 - 4971	Effects of off-axis GaN substrates on optical properties of m-plane InGaN/GaN light-emitting diodes Yamada H, Iso K, Masui H, Saito M, Fujito K, DenBaars SP, Nakamura S
4972 - 4975	Characteristics of a-plane GaN with the SiNx insertion layer grown by metal-organic chemical vapor deposition Ko TS, Wang TC, Huang HM, Chen JR, Chen HG, Chu CP, Lu TC, Kuo HC, Wang SC
4976 - 4978	Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substrates Mauder C, Khoshroo LR, Behmenburg H, Wen TC, Dikme Y, Rzheutskii MV, Yablonskii GP, Woitok J, Chou MMC, Heuken M, Kalisch H, Jansen RH
4979 - 4982	Reactor-pressure dependence of growth of a-plane GaN on r-plane sapphire by MOVPE Miyagawa R, Narukawa M, Ma B, Miyake H, Hiramatsu K
4983 - 4986	Properties of non-polar a-plane GaN/AlGaN quantum wells Kappers MJ, Hollander JL, Johnston CF, McAleese C, Rao DVS, Sanchez AM, Humphreys CJ, Badcock TJ, Dawson P
4987 - 4991	Growth of InxGa1-xN/GaN QW structures with high indium concentration on c-plane and m-plane surfaces by MOVPE Jonen H, Rossow U, Langer T, Drager A, Hoffmann L, Bremers H, Hangleiter A, Bertram F, Metzner S, Christen J
4992 - 4995	Photoluminescence and structural analysis of a-plane InGaN layers Aschenbrenner T, Figge S, Schowalter M, Rosenauer A, Hommel D
4996 - 4998	Control of p-type conduction in a-plane Ga1-xInxN (0 < x < 0.10) grown on r-plane sapphire substrate by metalorganic vapor-phase epitaxy Iida D, Iwaya M, Kamiyama S, Amano H, Akasaki I
4999 - 5002	Growth of non-polar (1 1 (2)over-bar 0)GaN on a patterned (110)Si substrate by selective MOVPE Tanikawa T, Rudolph D, Hikosaka T, Honda Y, Yamaguchi M, Sawaki N
5003 - 5006	Growth of Ga-doped ZnO by MOVPE using diisopropylzinc and tertiary butanol Nishimoto N, Yamamae T, Kaku T, Matsuo Y, Senthilkumar K, Senthilkumar O, Okamoto J, Yamada Y, Kubo S, Fujita Y
5007 - 5010	Step-flow growth of homoepitaxial ZnO thin films by ultrasonic spray-assisted MOVPE Nishinaka H, Fujita S
5011 - 5015	Effects of N doping on ZnO thin films grown by MOVPE Zaidi T, Fenwick WE, Melton A, Li N, Gupta S, Yu HB, Ougazzaden A, Ferguson I
5016 - 5019	Enhancement of electron mobility in ZnO layers with applying ultrasonic spray-assisted MOVPE and buffer layers Kamada Y, Nishinaka H, Kameyama N, Fujita S
5020 - 5024	Structural and optical properties of polar and non-polar ZnO films grown by MOVPE Zhu JJ, Aaltonen T, Venkatachalapathy V, Galeckas A, Kuznetsov AY
5025 - 5027	Growth and characterization of GaN:Mn layers by MOVPE Sofer Z, Sedmidubsky D, Stejskal J, Hejtmanek J, Marygsko M, Jurek K, Vaclavu M, Havranek V, Mackova A
5028 - 5031	Growth and characterization of manganese-doped InAsP Pristovsek M, Meissner C, Kneissl M, Jakomin R, Vantaggio S, Tarricone L
5032 - 5038	MOVPE growth of transition-metal-doped GaN and ZnO for spintronic applications Gupta S, Fenwick WE, Melton A, Zaidi T, Yu H, Rengarajan V, Nause J, Ougazzaden A, Ferguson IT
5039 - 5043	Highly spin-polarized electron photocathode based on GaAs-GaAsP superlattice grown on mosaic-structured buffer layer Jin XG, Maeda Y, Saka T, Tanioku M, Fuchi S, Ujihara T, Takeda Y, Yamamoto N, Nakagawa Y, Mano A, Umi S, Yamamoto M, Nakanishi T, Horinaka H, Kato T, Yasue T, Koshikawa T
5044 - 5047	Hexagonal BN epitaxial growth on (0001) sapphire substrate by MOVPE Kobayashi Y, Akasaka T
5048 - 5052	Hexagonal boron nitride grown by MOVPE Kobayashi Y, Akasaka T, Makimoto T
5053 - 5057	Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications Longo M, Salicio O, Wiemer C, Fallica R, Molle A, Fanciulli M, Giesen C, Seitzinger B, Baumann PK, Heuken M, Rushworth S
5058 - 5062	Effect of boron incorporation on growth behavior of BGaN/GaN by MOVPE Orsal G, Maloufi N, Gautier S, Alnot M, Sirenko AA, Bouchaour M, Ougazzaden A
5063 - 5065	Computational intelligence applied to the growth of quantum dots Singulani AP, Vilela OP, Pacheco MCA, Vellasco MBR, Pires MR, Souza PL
5066 - 5068	Suppression of the wavelength blue shift during overgrowth of InGaAs-based quantum dots Strittmatter A, Germann TD, Kettler T, Posilovic K, Pohl J, Pohl UW, Bimberg D
5069 - 5072	InAs/InP QDs with GaxIn1-xAs cap layer by a double-cap procedure using MOVPE selective area growth Akaishi M, Okawa T, Saito Y, Shimomura K
5073 - 5076	Wideband wavelength electroluminescence from InAs/InP QDs using double-cap procedure by MOVPE selective area growth Saito Y, Okawa T, Akaishi M, Shimomura K
5077 - 5080	InAs island-to-ring transformation by a partial capping layer Aierken A, Hakkarainen T, Riikonen J, Sopanen M
5081 - 5084	Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dots Hospodkova A, Pangrac J, Oswald J, Hulicius E, Kuldova K, Vyskocil J, Melichar K, Simecek T
5085 - 5088	High-density InAs quantum dots on GaNAs buffer layer Suzuki R, Miyamoto T, Sengoku T, Koyama F
5089 - 5092	Growth of red InP/GaInP quantum dots on a low density InAs/GaAs island seed layer by MOVPE Rossbach R, Schulz WM, Reischle M, Beirne GJ, Hermannstadter C, Jetter M, Michler R
5093 - 5097	Selective-area growth of GaAs and InAs nanowires-homo- and heteroepitaxy using SiNx templates Paetzelt H, Gottschalch V, Bauer J, Benndorf G, Wagner G
5098 - 5101	Red to orange electroluminescence from InP/AlGaInP quantum dots at room temperature Rossbach R, Schulz WM, Eichfelder M, Reischle M, Beirne GJ, Jetter M, Michler P
5102 - 5105	Effects of growth conditions on the crystal structure of gold-seeded GaP nanowires Johansson J, Karlsson LS, Dick KA, Bolinsson J, Wacaser BA, Deppert K, Samuelson L
5106 - 5110	VLS growth of GaAs/(InGa)As/GaAs axial double-heterostructure nanowires by MOVPE Bauer J, Gottschalch V, Paetzelt H, Wagner G
5111 - 5113	SA-MOVPE of InGaAs nanowires and their compositions studied by micro-PL measurement Sato T, Kobayashi Y, Motohisa J, Hara S, Fukui T
5114 - 5118	Luminescence of GaAs/AlGaAs core-shell nanowires grown by MOVPE using tertiarybutylarsine Prete P, Marzo F, Paiano P, Lovergine N, Salviati G, Lazzarini L, Sekiguchi T
5119 - 5122	Characterization of GaSb nanowires grown by MOVPE Jeppsson M, Dick KA, Nilsson HA, Skold N, Wagner JB, Caroff P, Wernersson LE
5123 - 5128	VLS growth of GaN nanowires on various substrates Gottschalch V, Wagner G, Bauer J, Paetzelt H, Shirnow M
5129 - 5133	Catalyst-free growth and characterization of gallium nitride nanorods Kuo SY, Lai FI, Chen WC, Hsiao CN
5134 - 5138	Growth and characterization of ZnO nanostructures on sapphire substrates Mergenthaler K, Gottschalch V, Bauer J, Paetzelt H, Wagner G
5139 - 5142	MOVPE growth of GaN around ZnO nanopillars Thapa SB, Hertkorn J, Wunderer T, Lipski F, Scholz F, Reiser A, Xie Y, Feneberg M, Thonke K, Sauer R, Durrschnabel M, Yao LD, Gerthsen D, Hochmuth H, Lorenz M, Grundmann M
5143 - 5146	Temperature and current dependences of electroluminescence from InGaN/GaN multiple quantum wells Lee JC, Wu YF, Wang YP, Nee TE
5147 - 5150	Doping control and evaluation of pn-junction LED in GaPN grown by OMVPE Hatakenaka S, Nakanishi Y, Wakahara A, Furukawa Y, Kada H
5151 - 5153	Formation of textured sapphire substrates by self-arrangement process and wet etching for InGaAlN LEDs Sakharov AV, Lundin WV, Zavarin EE, Sinitsyn MA, Nikolaev AE, Lundina EY, Tsatsulnikov AF
5154 - 5157	Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layer Svensk O, Torma PT, Suihkonen S, Ali M, Lipsanen H, Sopanen M, Odnoblyudov MA, Bougrov VE
5158 - 5161	Carrier injection efficiency in nitride LEDs Lee DS, Byrnes D, Parekh A, Ting S, Quinn W
5162 - 5165	Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs Torma PT, Svensk O, Ali M, Suihkonen S, Sopanen M, Odnoblyudov MA, Bougrov VE
5166 - 5169	Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor deposition Liu JP, Ryou JH, Lochner Z, Limb J, Yoo DW, Dupuis RD, Wu ZH, Fischer AM, Ponce FA
5170 - 5174	Efficiency enhancement of UV/blue light emitting diodes via nanoscaled epitaxial lateral overgrowth of GaN on a SiO2 nanorod-array patterned sapphire substrate Chiu CH, Li ZY, Chao CL, Lo MH, Kuo HC, Yu PC, Lu TC, Wang SC, Lau KM, Cheng SJ
5175 - 5177	Growth parameter optimization of the GaInP/AlGaInP active zone of 635 nm red laser diodes Kaspari C, Zorn M, Weyers M, Erbert G
5178 - 5181	1150-nm wavelength InGaAs/GaAs VCSELs incorporating regrown tunnel junctions Mereuta A, Iakovlev V, Caliman A, Mutter L, Sirbu A, Kapon E
5182 - 5186	Quantum-dot semiconductor disk lasers Germann TD, Strittmatter A, Pohl UW, Bimberg D, Rautiainen J, Guina M, Okhotnikov OG
5187 - 5190	Semiconductor components for femtosecond semiconductor disk lasers grown by MOVPE Zorn M, Klopp R, Saas F, Ginolas A, Kruger O, Griebner U, Weyers M
5191 - 5197	OMVPE growth of highly strain-balanced GaInAs/AlInAs/InP for quantum cascade lasers Wang CA, Huang RK, Goyal A, Donnelly JR, Calawa DR, Cann SG, O'Donnell F, Plant JJ, Missaggia LJ, Turner GW, Sanchez-Rubio A
5198 - 5203	MOCVD of thin film photovoltaic solar cells-Next-generation production technology? Irvine SJC, Barrioz V, Lamb D, Jones EW, Rowlands-Jones RL
5204 - 5208	Very high efficiency triple junction solar cells grown by MOVPE Stan M, Aiken D, Cho B, Cornfeld A, Diaz J, Ley V, Korostyshevsky A, Patel P, Sharps P, Varghese T
5209 - 5213	Influence of GaInP ordering on the electronic quality of concentrator solar cells Garcia I, Rey-Stolle I, Algora C, Stolz W, Volz K
5214 - 5216	Excitonic absorption in GaN layers of GaN-based UV Schottky-type light-emitting diodes grown by metal-organic vapor phase epitaxy Komiyama S, Noguchi K, Suzuki S, Honda T
5217 - 5222	Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes Dupuis RD, Ryou JH, Shen SC, Yoder PD, Zhang Y, Kim HJ, Choi S, Lochner Z
5223 - 5226	Hydrogen-related defects in InGaP/GaAs heterojunction bipolar transistors Yamada H, Fukuhara N, Hata M, Akimoto K
5227 - 5231	AlGaAs/GaAs heterojunction phototransistor with a double delta-doped base grown by AP MOVPE Sciana B, Zborowska-Lindert I, Radziewicz D, Boratynski B, Tlaczala M, Kovac J, Srnanek R, Skriniarova J, Florovic M
5232 - 5236	GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application Poisson MADF, Magis M, Tordjman M, Di Persio J, Langer R, Toth L, Pecz B, Guziewicz M, Thorpe J, Aubry R, Morvan E, Sarazin N, Gaquiere C, Meneghesso G, Hoel V, Jacquet JC, Delage S