4665 - 4669 |
Properties of surface and interface structure of AlN/3C-SiC/Ge/Si (111) heterostructure Nader R, Kazan M, Zgheib C, Pezoldt J, Masri P |
4670 - 4674 |
High temperature transformation in the defects and impurities system of PbTe:Eu crystals Zayachuk DM, Mikityuk VI, Frasunyak VM, Shlemkevych VV |
4675 - 4678 |
Influence of periodic magnetic field on the growth of CVD diamond films at lower temperature You XL, Yu ZM, Shi L, Wang L |
4679 - 4684 |
Thermal transportation simulation of a susceptor structure with ring groove for the vertical MOCVD reactor Li ZM, Hao Y, Zhang JC, Yang LA, Xu SR, Chang YM, Bi ZW, Zhou XW, Ni JY |
4685 - 4691 |
On the nucleation, coalescence, and overgrowth of HVPE GaN on misoriented sapphire substrates and the origin of pinholes Bohnen T, de Jong AEF, van Enckevort WJP, Weyher JL, van Dreumel GWG, Ashraf H, Hageman PR, Vlieg E |
4692 - 4697 |
Growth temperature dependence of partially Fe filled MWCNT using chemical vapor deposition Sengupta J, Jacob C |
4698 - 4703 |
Shape-controlled synthesis of iron sulfide nanostructures via oriented attachment mechanism Lai HY, Chen CJ |
4704 - 4707 |
A new method of growing K2CoxNi1-x(SO4)(2)*6H(2)O (x=0; 0.4; 0.8; 1) mixed crystals and their spectral investigation Polovynko I, Rykhlyuk S, Karbovnyk I, Koman V, Piccinini M, Guidi MC |
4708 - 4713 |
Growth mechanism of large-size anthracene single crystals grown by a solution technique Zhang PQ, Deng JC, Zeng XH, Liu ZH, Qiu YX, Zhong HJ, Fan YM, Huang J, Zhang JP, Xu K |
4714 - 4719 |
Unseeded Supersolubility of Lithium Carbonate: Experimental Measurement and Simulation with Mathematical Models Sun YZ, Song XF, Wang J, Luo Y, Yu JG |
4720 - 4724 |
Unidirectional growth of < 0 0 1 > sodium acid phthalate single crystal by Sankaranarayanan-Ramasamy (SR) method Senthil A, Ramasamy P |
4725 - 4729 |
Orientation of growing crystals of Co- or Gd-containing L-threonine dehydrogenase by magnetic fields Maki S, Ishikawa K, Ataka M |
4730 - 4739 |
In situ AFM study of the interaction between calcite {1 0 (1)over-bar 4} surfaces and supersaturated Mn2+-CO32- aqueous solutions Perez-Garrido C, Astilleros JM, Fernandez-Diaz L, Prieto M |
4740 - 4746 |
Synthesis of nanorod and needle-like hydroxyapatite crystal and role of pH adjustment Zhang YJ, Lu JJ, Wang JQ, Yang SR, Chen YF |
4747 - 4752 |
Trehalose solution viscosity at low temperatures measured by dynamic light scattering method: Trehalose depresses molecular transportation for ice crystal growth Uchida T, Nagayama M, Gohara K |
4753 - 4758 |
Selective synthesis of hexagonal and monoclinic LaPO4:Eu3+ nanorods by a hydrothermal method Yang M, You HP, Jia G, Huang YJ, Song YH, Zheng YH, Liu K, Zhang LH |
4759 - 4762 |
Study on effects of time and temperature on growth of nanocrystalline zinc selenide synthesized by hydrothermal method Wang BB, Xu XZ |
4763 - 4769 |
The radial distribution of dopant (Cr, Nd, Yb, or Ce) in yttrium aluminum garnet (Y3Al5O12) single crystals grown by the micro-pulling-down method Simura R, Yoshikawa A, Uda S |
4770 - 4777 |
A diffusionless transition in a normal alkane Nene S, Karhu E, Flemming RL, Hutter JL |
4778 - 4783 |
Simulation of grain morphologies and competitive growth in weld pool of Ni-Cr alloy Zhan XH, Dong ZB, Wei YH, Ma R |
4784 - 4790 |
Multi-analytical study of syntactic coalescence of polytypes in a 6H-SiC sample Agrosi G, Tempesta G, Capitani GC, Scandale E, Siche D |
4791 - 4798 |
Dynamic crystal-growth process observed during hydrothermal coarsening of nanocrystalline hydroxyfluorapatite Lu ZZ, Wang H, Zeng J, Liu JB |
4799 - 4804 |
Growth of c-axis oriented ZnO nanowires from aqueous solution: The decisive role of a seed layer for controlling the wires' diameter Kenanakis G, Vernardou D, Koudoumas E, Katsarakis N |
4805 - 4811 |
Characterizations of 0.4 and 1 mm diameter Yb:YAG single-crystal fibers grown by the micro-pulling-down method for laser applications Aubry N, Sangla D, Mancini C, Didierjean J, Perrodin D, Fourmigue JM, Tillement O, Lebbou K, Brenier A, Dujardin C, Balembois F, Georges P |
4812 - 4812 |
MOCVD of ZnO thin films for potential use as compliant layers for GaN on Si (vol 310, pg 1010, 2008) Black K, Jones AC, Chalker PR, Gaskell JM, MurreyB RT, Joyce TB, Rushworth SA |