417 - 424 |
Interpreting the oxygen partial pressure around a molten silicon drop in terms of its surface tension Azami T, Hibiya T |
425 - 430 |
Admissible manoeuvres in pulling rate for filament grown from the melt in a vacuum by EFG method Braescu L, Balint AM, Balint S |
431 - 438 |
High-mobility GaN epilayer grown by RF plasma-assisted molecular beam epitaxy on intermediate-temperature GaN buffer layer Fong WK, Zhu CF, Leung BH, Surya C |
439 - 445 |
Characteristics of GaN grown by metalorganic chemical vapor deposition using trimethylgallium and triethylgallium Song KM, Kim DJ, Moon YT, Park SJ |
446 - 450 |
Carbonization process of Si(100) by ion-beam bombardment Liao MY, Chai CL, Yao ZY, Yang SY, Liu ZK, Wang ZG |
451 - 459 |
Origins of defect structures in dendritic web silicon Hayes JR, Zhang X, Meier DL, Mahajan S |
460 - 465 |
Growth of Ba(Ti1-xZrx)O-3 single crystals by the laser heated pedestal growth technique Yu Z, Guo RY, Bhalla AS |
466 - 472 |
Effect of silver addition on structure and electrical properties of the spin ladder compound La2Cu2O5 single crystals Sekar C, Watanabe T, Matsuda A, Shibata H, Zenitani Y, Akimitsu J |
473 - 476 |
Specific morphological features of LaB3O6 single crystals: a new promising material for thin-layer radiation detectors Dolzhenkova EF, Shekhovtsov AN, Tolmachev A, Dubovik MF, Grinyov BV, Tarasov VA, Baumer VN, Zelenskaya OV |
477 - 482 |
High-speed float zone growth of heavily Nd-doped YVO4 single crystals Shonai T, Higuchi M, Kodaira K |
483 - 489 |
Surface morphology and growth mechanism of YBa2Cu3O7 films by chemical vapor deposition in a magnetic field Ma YW, Watanabe K, Awaji S, Motokawa M |
490 - 502 |
Enhancement of compositional modulation in GaInP epilayers by the addition of surfactants during organometallic vapor phase epitaxy growth Lee RT, Fetzer CM, Jun SW, Chapman DC, Shurtleff JK, Stringfellow GB, Ok YW, Seong TY |
503 - 511 |
Top seeded solution growth and characterization of piezo-/ferroelectric (1-x)Pb(Zn1/3Nb2/3)O-3-xPbTiO(3) single crystals Chen W, Ye ZG |
512 - 516 |
Preparation and properties of lanthanum strontium cobalt films on Si(100) by metallorganic chemical liquid deposition Wang GS, Lai ZQ, Yu J, Guo SL, Chu JH, Li G, Lu QH |
517 - 522 |
Effects of supersaturation and impurity on step advancement on TiO2 (110) faces grown from high-temperature solution Kawamura F, Yasui I, Sunagawa I |
523 - 536 |
Three-dimensional simulation of facet formation and the coupled heat flow and segregation in Bridgman growth of oxide crystals Lan CW, Tu CY |
537 - 540 |
Growth and properties of Zn doped lithium niobate crystal Zhang Y, Xu YH, Li MH, Zhao YQ |
541 - 547 |
Liquid phase silicon at the front of crystallization during SiCPVT growth Drachev RV, Straty GD, Cherednichenko DI, Khlebnikov II, Sudarshan TS |
548 - 554 |
Crystal orientation regulation in ostrich eggshells Feng QL, Zhu X, Li HD, Kim TN |
555 - 560 |
Revelation of dislocation etch pits in mixed crystals of ammonium-potassium sulphate, [K1-x(NH4)(x)](2)SO4 Karan S, Sen Gupta S, Sen Gupta SP |
561 - 566 |
Effect of a high magnetic field on protein crystal growth - magnetic field induced order in aqueous protein solutions Zhong CW, Wang LB, Wakayama NI |
567 - 582 |
Morphology, evolution and other characteristics of gibbsite crystals grown from pure and impure aqueous sodium aluminate solutions Sweegers C, de Coninck HC, Meekes H, van Enckevort WJP, Hiralal IDK, Rijkeboer A |
583 - 590 |
The role of traps in electrical conductivity and optical absorption in phthalocyanine-doped anthracene co-crystals Selvaraj SL, Xavier FP |
591 - 598 |
Growth peculiarities of aluminum anodic oxide at high voltages in diluted phosphoric acid Jagminas A, Bigeliene D, Mikulskas I, Tomasiunas R |
599 - 608 |
Buoyancy and rotation in small-scale vertical Bridgman growth of cadmium zinc telluride using accelerated crucible rotation Yeckel A, Derby JJ |
609 - 617 |
Evaluation of experimental parameters for growth of homogeneous solid solutions Scheel HJ, Swendsen RH |