| 271 - 276 |
Arsenic-induced Ge island morphology changes during molecular beam epitaxy of Ge on Si(001)
Liu B, Berrie CL, Kitajima T, Leone SR |
| 277 - 282 |
Behavior of dislocations due to thermal shock in B-doped Si seed in Czochralski Si crystal growth
Taishi T, Huang XM, Wang TF, Yonenaga I, Hoshikawa K |
| 283 - 288 |
Compositional and structural analysis of Nd-doped GaSb bulk crystals grown by the vertical Bridgman technique
Plaza JL, Hidalgo P, Mendez B, Piqueras J, Dieguez E |
| 289 - 296 |
Characteristics of GaN/Si(111) epitaxy grown using Al0.1Ga0.9N/AlN composite nucleation layers having different thicknesses of AlN
Jang SH, Lee SJ, Seo IS, Ahn HK, Lee OY, Leem JY, Lee CR |
| 297 - 303 |
The role of AlN buffer layer in AlxGa1-xN/GaN heterostructures with x from 0.35 to 0.5 grown on sapphire (0001)
Seo IS, Lee SJ, Jang SH, Yeon JM, Leem JY, Park YJ, Lee CR |
| 304 - 308 |
Effect of InAlAs/InGaAs cap layer on optical properties of self-assembled InAs/GaAs quantum dots
Zhang ZY, Xu B, Jin P, Meng XQ, Li CM, Ye XL, Li DB, Wang ZG |
| 309 - 312 |
Characteristics of InSb grown on single crystalline Mn-Zn ferrite substrates
Fujioka H, Ikeda T, Ono K, Ito S, Oshima M |
| 313 - 319 |
Preparation of iron selenide films by selenization technique
Hamdadou N, Bernede JC, Khelil A |
| 320 - 324 |
Cubic GaN grown on (001) GaAs substrate by RF plasma assisted gas source MBE
Sung LW, Lin HH, Chia CT |
| 325 - 329 |
Synthesis, growth and spectral properties of Tm3+/Yb3+-codoped YVO4 crystal
Zhang LZ, Wang GF, Lin SK |
| 330 - 346 |
A model for anisotropic epitaxial lateral overgrowth
Khenner M, Braun RJ, Mauk MG |
| 347 - 351 |
Single-crystal growth of silver-lead oxide Ag5Pb2O6 from fused nitrates
Abe H, Ye JH, Imai M, Yoshii K, Matsushita A, Kitazawa H |
| 352 - 362 |
Macro- and micro-scale simulation of growth rate and composition in MOCVD of yttria-stabilized zirconia
Akiyama Y, Imaishi N, Shin YS, Jung SC |
| 363 - 373 |
Habit control during rapid growth of KDP and DKDP crystals
Zaitseva N, Carman L, Smolsky I |
| 374 - 378 |
The growth of a single crystal filament and of a sheet with pre-established piece-wise constant diameter cross-section and half-thickness, respectively, from the melt in a vacuum by EFG method
Braescu L, Balint AM, Schlett Z, Balint S |
| 379 - 386 |
Efficient adaptive phase field simulation of dendritic growth in a forced flow at low supercooling
Lan CW, Hsu CM, Liu CC |
| 387 - 394 |
New method for measurement of interdiffusion coefficient in high temperature solutions based on Fick's first law
Ujihara T, Fujiwara K, Sazaki G, Usami N, Nakajima K |
