Journal of Crystal Growth

Journal of Crystal Growth, Vol.243, No.3-4 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (24 articles)

371 - 374	Germanium effect on void defects in Czochralski silicon Yang DR, Yu XG, Ma XY, Xu J, Li LB, Que DL
375 - 380	Reduction of cracks in GaN films grown on Si-on-insulator by lateral confined epitaxy Zamir S, Meyler B, Salzman J
381 - 388	Initial stage of liquid phase heteroepitaxy of III-V ternary alloys Asomoza R, Elyukhin VA, Pena-Sierra R, Flores BLR
389 - 395	Strain effect in ZnSe epilayers grown on GaAs substrates Yu YM, Nam S, O B, Lee KS, Yu PY, Lee J, Choi YD
396 - 403	Use of optical emission intensity to characterize an RF plasma source for MBE growth of GaAsN Reifsnider JM, Govindaraju S, Holmes AL
404 - 409	Use of diethylselenide as a less-hazardous source for preparation of CuInSe2 photo-absorbers by selenization of metal precursors Chichibu SF, Sugiyama M, Ohbasami M, Hayakawa A, Mizutani T, Nakanishi H, Negami T, Wada T
410 - 418	Computer simulations of fluid flow and heat transfer in metal strip heating zone crystal growth Zhang SY, Ni DQ, Song YT, Wu X
419 - 426	Low temperature growth and structural characterization of nanocrystalline silicon films Wong TC, Yu CC, Wu JJ
427 - 431	Reciprocal space mapping of GaNxAs1-x grown by RF plasma-assisted solid source molecular beam epitaxy Loke WK, Yoon SF, Ng TK, Wang SZ, Fan WJ
432 - 438	Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 mu m Meng XQ, Xu B, Jin P, Ye XL, Zhang ZY, Li CM, Wang ZG
439 - 443	Crystal growth of undoped ZnO films on Si substrates under different sputtering conditions Zhang YT, Du GT, Liu DL, Wang XQ, Ma Y, Wang JZ, Yin JZ, Yang XT, Hou XK, Yang SR
444 - 449	Elaboration and characterisation of Bi2Se3 thin films using ditertiarybutylselenide as a precursor by MOCVD system Al Bayaz A, Giani A, Foucaran A, Pascal-Delannoy F, Boyer A
450 - 455	A study on the growth of Yb : YVO4 single crystal Chen JZ, Guo FY, Zhuang NF, Lan JM, Hu XL, Gao SK
456 - 462	GaN thin film growth on GaAs (001) by CBE and plasma-assisted MBE Kim E, Rusakova I, Berishev I, Tempez A, Bensaoula A
463 - 475	A numerical study of thermal conditions in the THM growth of HgTe Martinez-Tomas MC, Munoz-Sanjose V, Reig C
476 - 489	Nucleation of gas hydrates Kashchiev D, Firoozabadi A
490 - 502	Calcareous scales formed by cathodic protection - an assessment of characteristics and kinetics Neville A, Morizot AP
503 - 516	Effects of ferrocyanide ions on NaCl crystallization in porous stone Rodriguez-Navarro C, Fernandez LL, Doehne E, Sebastian E
517 - 521	Striations in the KCl single crystals grown from aqueous solutions Kamei T, Inoue T, Yanagiya S, Mori A
522 - 525	Novel seeding technique for growing KTiOPO4 single crystals by the TSSG method Bhaumik I, Ganesamoorthy S, Bhatt R, Sundar R, Karnal AK, Wadhawan VK
526 - 530	Growth of organic nonlinear optical material: hippuric acid Bhat MN, Dharmaprakash SM
531 - 538	Growth of dendrites in a rapidly solidified Al-23Sr alloy Zhang ZH, Bian XF, Wang Y
539 - 545	Structural defects and characteristics of lead fluoride (PbF2) crystals grown by non-vacuum Bridgman method Ren GH, Shen DZ, Wang SH, Yin ZW
546 - 560	Approximate material-balance solution to the moving meniscus model of detached solidification Wang YZ, Regel LL, Wilcox WR