Journal of Crystal Growth

Journal of Crystal Growth, Vol.245, No.3-4 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (20 articles)

181 - 192	Area-selective epitaxy and epitaxial lateral overgrowth of InP by liquid phase epitaxy on three integral axes Oyama Y, Kochiya T, Suto K, Nishizawa J
193 - 197	Optical characteristics of Mn+ -ion-implanted GaN epilayers Shon Y, Kwon YH, Kang TW, Fan X, Fu D, Kim Y
198 - 206	Modelling of high temperature optical constants and surface roughness evolution during MOVPE growth of GaN using in-situ spectral reflectometry Balmer RS, Pickering C, Pidduck AJ, Martin T
207 - 211	Fabrication of silicon-on-insulator structure with Si3N4 as buried insulating films by epitaxial layer transfer Xie XY, Zhang NL, Men C, Liu WL, Lin Q, An Z, Lin CL
212 - 218	Self-organized InGaAs quantum dots grown on GaAs (311)B substrate studied by conductive atomic force microscope technique Okada Y, Miyagi M, Akahane K, Kawabe M, Shigekawa H
219 - 227	Microstructural evolution of precursor-derived gallium nitride thin films Puchinger M, Kisailus DJ, Lange FF, Wagner T
228 - 236	InGaAs zone growth single crystal with convex solid-liquid interface toward the melt Nishijima Y, Otsubo K, Tezuka H, Nakajima K, Ishikawa H
237 - 246	Vertical gradient freeze growth of GaAs with a rotating magnetic field Patzold O, Grants I, Wunderwald U, Jenkner K, Croll A, Gerbeth G
247 - 253	Growth of AlGaN epilayers related gas-phase reactions using TPIS-MOCVD Kim S, Seo J, Lee K, Lee H, Park K, Kim Y, Kim CS
254 - 260	Growth behavior and crystal structures of different phases in MnxCd1-xIn2Te4 grown by Bridgman method Chang YQ, Guo XP, Jie WQ, An WJ
261 - 266	Temperature dependence of band gap and photocurrent properties for the AgInS2 epilayers grown by hot wall epitaxy You SH, Hong KJ, Lee BJ, Jeong TS, Youn CJ, Park JS, Baek SN
267 - 272	Influence of powder supply on radio-frequency power stability and compositional uniformity in near-stoichiometric LiTaO3 crystal grown by double-crucible Czochralski method Nakamura M, Takekawa S, Furukawa Y, Kitamura K
273 - 277	Studies on the solubility of GaPO4 in phosphoric acid Barz RU, Grassl M, Gille P
278 - 288	Description of the adhesive crystal growth under normal and micro-gravity conditions employing experimental and numerical approaches Maruyama S, Ohno K, Komiya A, Sakai S
289 - 296	TSSG of RbTiOPO4 single crystals from phosphate flux and their characterization Kannan C, Moorthy SG, Kannan V, Subramanian C, Ramasamy P
297 - 303	Comparison between pure and deuterated potassium acid phthalate (DKAP) single crystals Kumar RM, Babu DR, Murugakoothan P, Jayavel R
304 - 308	Low-temperature synthesis and characterization of beta-La2S3 nanorods Tang KB, An CH, Xie PB, Shen GZ, Qian YT
309 - 320	Nucleation and growth kinetics in synthesizing nanometer calcite Lin RY, Zhang JY, Zhang PX
321 - 333	X-ray diffraction properties of protein crystals prepared in agarose gel under hydrostatic pressure Charron C, Robert MC, Capelle B, Kadri A, Jenner G, Giege R, Lorber B
334 - 345	Parallel computation of radiative heat transfer in an axisymmetric closed chamber: an application to crystal growth Garber W, Tangerman F