Journal of Crystal Growth

Journal of Crystal Growth, Vol.246, No.3-4 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (22 articles)

177 - 186	Mechanisms of crystallization of bulk GaN from the solution under high N-2 pressure Grzegory I, Bockowski M, Lucznik B, Krukowski S, Romanowski Z, Wroblewski M, Porowski S
187 - 193	Bulk AlN crystal growth: self-seeding and seeding on 6H-SiC substrates Edgar JH, Liu L, Liu B, Zhuang D, Chaudhuri J, Kuball M, Rajasingam S
194 - 206	Directional crystallization of GaN on high-pressure solution grown substrates by growth from solution and HVPE Bockowski M, Grzegory I, Krukowski S, Lucznik B, Romanowski Z, Wroblewski M, Borysiuk J, Weyher J, Hageman P, Porowski S
207 - 214	Growth and separation related, properties of HVPE-GaN free-standing films Paskova T, Darakchieva V, Paskov P, Sodervall U, Monemar B
215 - 222	Thick and high-quality GaN growth on GaAs (111) substrates for preparation of freestanding GaN Kumagai Y, Murakamia H, Seki H, Koukitu A
223 - 229	Growth and characterization of low defect GaN by hydride vapor phase epitaxy Xu XP, Vaudo RP, Loria C, Salant A, Brandes GR, Chaudhuri J
230 - 236	Surface polarity dependence of decomposition and growth of GaN studied using in situ gravimetric monitoring Koukitu A, Mayumi M, Kumagai Y
237 - 243	Recrystallization prospects for freestanding low-temperature GaN grown using ZnO buffer layers Butcher KSA, Afifuddin P, Chen PT, Godlewski M, Szczerbakow A, Goldys EM, Tansley TL, Freitas JA
244 - 251	Use of high temperature hydrogen annealing to remove sub-surface damage in bulk GaN Myers TH, VanMil BL, Holbert LJ, Peng CY, Stinespring CD, Alam J, Freitas JA, Dmitriev VA, Pechnikov A, Shapovalova Y, Ivantsov V
252 - 258	Piezoresponse force microscopy for piezoelectric measurements of III-nitride materials Rodriguez BJ, Gruverman A, Kingon AI, Nemanich RJ
259 - 270	Comparison between structural properties of bulk GaN grown in liquid Ga under high N pressure and GaN grown by other methods Lihental-Weber Z, Jasinski J, Washburn J
271 - 280	Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN Raghothamachar B, Vetter WM, Dudley M, Dalmau R, Schlesser R, Sitar Z, Michaels E, Kolis JW
281 - 286	Vacancies as compensating centers in bulk GaN: doping effects Saarinen K, Ranki V, Suski T, Bockowski M, Grzegory I
287 - 298	Some effects of oxygen impurities on AlN and GaN Slack GA, Schowalter LJ, Morelli D, Freitas JA
299 - 306	Optical characterization of bulk GaN grown by a Na-Ga melt technique Skromme BJ, Palle K, Poweleit CD, Yamane H, Aoki M, DiSalvo FJ
307 - 314	Donors in hydride-vapor-phase epitaxial GaN Freitas JA, Moore WJ, Shanabrook BV, Braga GCB, Lee SK, Park SS, Han JY, Koleske DD
315 - 319	Do we know the fundamental energy gap of InN? Bechstedt F, Furthmuller J
320 - 324	Band structure effects on the transient electron transport in wurtzite InN de Vasconcelos TF, Maia FF, Caetano EWS, Freire VN, da Costa JAP, da Silva EF
325 - 340	Excitons of the structure in wurtzite InxGa1-xN and their properties Alexandrov D
341 - 346	Strong exciton energy blue shift in graded wurtzite and zincblende GaN/Al0.2Ga0.8N single quantum wells Caetano EWS, Freire VN, Farias GA
347 - 354	Calculations of electronic and optical properties in p-doped AlGaN/GaN superlattices and quantum wells Rodrigues SCP, Sipahi GM
VII - VII	Bulk nitride semiconductors 2002 - Proceedings of the International Workshop on Bulk Nitride Semiconductors, Amazonas, Brazil, 18-23 May 2002 - Preface Babcock SE, Kuech TF, Freitas Jr JA