Journal of Crystal Growth

Journal of Crystal Growth, Vol.247, No.3-4 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (49 articles)

237 - 244	Comparison of MOVPE grown GaAs solar cells using different substrates and group-V precursors Derluyn J, Dessein K, Flamand G, Mols Y, Poortmans J, Borghs G, Moerman I
245 - 250	Influence of substrate polarity on the low-temperature GaN buffer layer growth on GaAs (111)A and (111)B surfaces Murakami H, Kumagai Y, Seki H, Koukitu A
251 - 254	Influence of a buried misfit dislocation network on the pyramid-to-dome transition size of Ge self-assembled quantum dots on Si(001) Kim HJ, Chang JY, Xie YH
255 - 260	Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si Tan LW, Wang QY, Wang J, Yu YH, Liu ZL, Lin LY
261 - 268	Growth and characterization of GaN and AlN films on (111) and (001) Si substrates Gong JR, Yeh MF, Wang CL
269 - 274	Structural and optical characterization of rapid thermally annealed InAs/In0.15Ga0.85As dots-in-well structure Raghavan S, Rotella P, Stintz A, Malloy KJ, Krishna S, Gray AL
275 - 278	Bulk GaN single crystals: growth conditions by flux method Song YT, Wang WJ, Yuan WX, Wu X, Chen XL
279 - 283	Optical property of self-assembled GaInNAs quantum dots grown by solid source molecular beam epitaxy Yew KC, Yoon SF, Sun ZZ, Wang SZ
284 - 290	Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire Bubendorff JL, Grandjean N, Damilano B, Troyon M
291 - 300	Numerical analysis of the dissolution process of GaSb into InSb melt under different gravity conditions Kimura T, Arafune K, Balakrishnan K, Ozawa T, Okano Y, Murakami N, Adachi H, Hayakawa Y, Kumagawa M
301 - 312	Numerical analysis for the growth of GaN layer in MOCVD reactor Shin CY, Baek BJ, Lee CR, Pak B, Yoon JM, Park KS
313 - 319	The effect of the initial dopant distribution in the melt on the axial compositional uniformity of a thin doped crystal grown in strictly zero-gravity environment by Bridgman-Stockbarger method Tulcan-Paulescu E, Balint AM, Balint S
320 - 332	Optimization of surface temperature distribution for control of point defects in the silicon single crystal Woo HS, Jeong JH, Kang IS
333 - 356	A numerical investigation of the effects of gas-phase particle formation on silicon film deposition from silane Kremer DM, Davis RW, Moore EF, Ehrman SH
357 - 362	Copper-catalyzed ZnO nanowires on silicon (100) grown by vapor-liquid-solid process Li SY, Lee CY, Tseng TY
363 - 370	The effect of calcination temperature on the crystallinity of TiO2 nanopowders Chen YF, Lee CY, Yeng MY, Chiu HT
371 - 380	HRTEM and GIXRD studies of CdS nanocrystals embedded in Al2O3 films produced by magnetron RF-sputtering Conde O, Rolo AG, Gomes MJM, Ricolleau C, Barber DJ
381 - 386	Introduction and characterization of interfacial defects in SrRuO3/BaTiO3/SrRuO3 multilayer films Jia CL, Contreras JR, Schubert J, Lentzen M
387 - 392	Properties of Dy3+-doped PbWO4 single crystal grown by modified Bridgman method Huang YL, Zhu WL, Feng XQ, Duan Y, Man ZY
393 - 400	Fabrication and characterization of transparent conductive ZnO : Al thin films prepared by direct current magnetron sputtering with highly conductive ZnO(ZnAl2O4) ceramic target Fang GJ, Li DJ, Yao BL
401 - 407	Effects of substrate temperature on the growth of C-60 polycrystalline films by physical vapor deposition Cheng WR, Tang SJ, Su YC, Lin YJ, Chiu KC
408 - 418	Epitaxial LiNb0.5Ta0.5O3 films on LiTaO3 and LiNbO3 substrates grown by thermal plasma Kulinich SA, Yamaki T, Bysakh S, Yamamoto H, Mitsuishi K, Song M, Terashima K, Furuya K
419 - 424	Synthesis and characterization of nanocrystalline niobates Liu JF, Li XL, Li YD
425 - 427	Bias-induced changes in carrier type of Pb(1-x)Fe(x)S nanocrystalline solution grown thin films Joshi RK, Sehgal HK
428 - 431	Effects of CaO addition on growth of YVO4 single crystals Zhang SY, Wu X, Yan XL, Ni DQ, Song YT
432 - 437	Physicochemical behavior of nonlinear optical crystal CdHg(SCN)(4) Wang XQ, Xu D, Lu MK, Yuan DR, Huang J, Li SG, Lu GW, Sun HQ, Guo SY, Zhang GH, Duana XL, Liu HY, Liu WL
438 - 444	A nanoindentation study of thick cBN films prepared by chemical vapor deposition Chan CY, Zhang WJ, Matsumoto S, Bello I, Lee ST
445 - 451	Characterizations and luminescence properties of annealed porous silicon films Chen SY, Kashkarov PK, Timoshenko VY, Liu BL, Jiang BX
452 - 456	Growth and X-ray diffraction of Nd3+ -doped Ba3Y(BO3)(3) crystal Pan SK, Hu ZS, Lin ZB, Wang GF
457 - 466	Crystal growth and characterization of the magnetic properties of CuSb2O6 Prokofiev AV, Ritter F, Assmus W, Gibson BJ, Kremer RK
467 - 471	Growth and spectroscopic characterization of Nd3BWO9 single crystal Majchrowski A, Michalski E, Brenier A
472 - 482	The competition between {1014} cleavage and {0112} steep rhombohedra in gel grown calcite crystals Pastero L, Costa E, Alessandria B, Rubbo M, Aquilano D
483 - 496	Factorially designed crystallization trials of the full-length P0 myelin membrane glycoprotein. I. Precipitation diagram Sedzik J, Kotake Y, Uyemura K, Ataka M
497 - 504	Growth of pure ZnO thin films prepared by chemical spray pyrolysis on silicon Ayouchi R, Martin F, Leinen D, Ramos-Barrado JR
505 - 508	Solvothermal preparation of graphite-like C3N4 nanocrystals Bai YJ, Lu B, Liu ZG, Li L, Cui DL, Xu XG, Wang QL
509 - 515	Heteroepitakial oxide structures grown by pulsed organometallic beam epitaxy (POMBE) Kaatz FH, Dai JY, Markworth PR, Buchholz DB, Chang RPH
516 - 522	Hollow rhombohedral calcite crystals encompassing CO2 microcavities nucleated in solution Aquilano D, Costa E, Genovese A, Massaro FR, Pastero L, Rubbo M
523 - 529	Habit modification of epsomite in the presence of urea Ramalingom S, Podder J, Kalkura SN, Bocelli G
530 - 540	Growth rates of the principal facets of ice between-10 degrees C and-40 degrees C Libbrecht KG
541 - 550	Polymorphic-polytypic transition induced in crystals by interaction of spirals and 2D growth mechanisms Aquilano D, Veesler S, Astier JP, Pastero L
551 - 554	Crystal growth and spectral properties of Nd3+: KY(WO4)(2) crystal Han MM, Wang GF
555 - 562	Microwave assisted crystallization of zeolite A from dense gels Bonaccorsi L, Proverbio E
563 - 575	Distinct property effects on rapid solidification of a thin, liquid layer on a substrate subject to self-consistent melting Yeh FB, Wei PS, Chiu SH
576 - 586	Rapid crystallization and growth mechanisms of highly undercooled Ag-Cu-Ge ternary alloy Wang N, Wei B
587 - 596	A phase field model with electric current Brush LN
597 - 612	Three-dimensional simulation of floating-zone crystal growth of oxide crystals Lan CW
613 - 622	Solid-liquid interface energies in the succinonitrile and succinonitrile-carbon tetrabromide eutectic system Marash N, Keslioglu K, Arslan B
623 - 630	Origin of positive charging of nanometer-sized clusters generated during thermal evaporation of copper Jeon ID, Barnes MC, Kim DY, Hwang NM
631 - 641	Effects of kinetic inhibitors on the formation and growth of hydrate crystals at a liquid-liquid interface Sakaguchi H, Ohmura R, Mori YH