V - VI |
Rostislaw Kaischew - 1908-2002 Mutaftschiev B |
391 - 395 |
Temperature dependence of Vickers hardness for Cd1-xMnxTe (0 <= x <= 0.82) single crystals Hwang Y, Kim H, Cho S, Um Y, Park H |
396 - 403 |
Growth of Mg-doped GaN micro-crystals using MgCl2 in direct reaction of Ga and NH3 Lee SH, Ahn SH, Kim KC, Suh EK, Nahm KS |
404 - 415 |
Viscosity of molten silicon and the factors affecting measurement Sato Y, Kameda Y, Nagasawa T, Sakamoto T, Moriguchi S, Yamamura T, Waseda Y |
416 - 421 |
Shape evolution of InAs quantum dots during overgrowth Songmuang R, Kiravittaya S, Schmidt OG |
422 - 428 |
Reduced-stress GaN epitaxial layers grown on Si(111) by using a porous GaN interlayer converted from GaAs Ghosh BK, Tanikawa T, Hashimoto A, Yamamoto A, Ito Y |
429 - 436 |
Control of crystal-melt interface shape during horizontal Bridgman growth of InSb crystal using solutal Marangoni convection Arafune K, Kodera K, Kinoshita A, Hirata A |
437 - 444 |
Cross-sectional scanning tunneling microscopy studies of lattice-matched InGaAs/InP quantum wells: variations in growth switching sequence McKay HA, Feenstra RM, Poole PJ, Aers GC |
445 - 454 |
On the use of available theoretical models for the interpretation of capillary phenomena of molten metals in the presence of oxygen Ratto M, Fiori L, Ricci E, Arato E |
455 - 460 |
Strain relaxation in InxGa1-xN epitaxial films grown coherently on GaN Park SE, O B, Lee CR |
461 - 469 |
Growth behaviours and properties of the ZnO : Al films prepared by reactive mid-frequency magnetron sputtering Hong RJ, Jiang X, Heide G, Szyszka B, Sittinger V, Werner W |
470 - 476 |
Growth of Ga1-xInxSb alloy crystals by conventional Czochralski pulling Tsaur SC, Kou S |
477 - 482 |
Kinetically limited quantum dot formation on AlAs(100) surfaces Pierz K, Ma Z, Keyser UF, Haug RJ |
483 - 486 |
Growth and properties of Li2B4O7 single crystals doped with Cu, Mn and Mg Park KS, Ahn JK, Kim DJ, Kim HK, Hwang YH, Kim DS, Park MH, Park Y, Yoon JJ, Leem JY |
487 - 491 |
Influence of SiN buffer layer in GaN epilayers Park SE, Lim SM, Lee CR, Kim CS, O B |
492 - 496 |
Laser performance of Nd : GdVO4 crystal at 1.34 mu m and intracavity double red laser Zhang HJ, Du CL, Wang JY, Hu XB, Xu XA, Dong CM, Liu JH, Kong HK, Jiang HD, Han RJ, Shao ZS, Jiang MH |
497 - 501 |
Epitaxially grown aluminum films with titanium intermediate layer on theta rotated Y-X LiNbO3 piezoelectric single crystal substrates Nakagawara O, Saeki M, Watanabe M, Inoue K, Hagi T, Makino T, Arai S |
502 - 506 |
Effect of highest temperature invoked on the crystallization of LiB3O5 from boron-rich solution Sabharwal SC, Tiwari B, Sangeeta |
507 - 513 |
Crystallographic modifications of physical properties of lithium niobate crystals by the cation location Xue DF, Kitamura K |
514 - 522 |
Transient temperature phenomena during sublimation growth of silicon carbide single crystals Klein O, Philip P |
523 - 530 |
Contactless density measurement of superheated and undercooled liquid Y3Al5O12 Paradis PF, Yu J, Ishikawa T, Aoyama T, Yoda S, Weber JKR |
531 - 537 |
Effects of ultrasound on crystallization behavior and ferroelectric properties of sol-gel-derived Pb(Zr, Ti)O-3 thin films Lee JH, Kim NK, Park BO |
538 - 543 |
The effects of rapid thermal annealing on the optical properties of Zn1-xMnxSe epilayer grown by MOCVD on GaAs substrate Lu SL, Wang JN, Huang JS, Bian LF, Jiang DS, Yang CL, Dai JM, Ge WK, Wang YQ, Zhang JY, Shen DZ |
544 - 548 |
Faceted vapor grown PbS single crystals under different sulfur vapor pressures Abe S, Masumoto K |
549 - 552 |
Self-template route to CdS hollow spheres and in situ conversion to CdS/Ag2S composite materials Shao MW, Wang DB, Hu B, Yu GH, Qian YT |
553 - 556 |
Growth and characterization of a new nonlinear optical L-histidine diphosphate single crystal Ittyachan R, Sagayaraj P |
557 - 560 |
Growth and characterization of a new promising NLO L-histidine bromide crystal Ittyachan R, Sagayaraj P |
561 - 571 |
Morphological control of precipitated calcite obtained by adjusting the electrical conductivity in the Ca(OH)(2)-H2O-CO2 system Garcia-Carmona J, Morales JG, Clemente RR |
572 - 583 |
The effect of organic ligands on the crystallinity of calcium phosphate van der Houwen JAM, Cressey G, Cressey BA, Valsami-Jones E |
584 - 593 |
The role of phosphonate speciation on the inhibition of barium sulfate precipitation Jones F, Stanley A, Oliveira A, Rohl AL, Reyhani MM, Parkinson GM, Ogden MI |
594 - 599 |
Growth of K0.4WO3 whiskers via a pressure-relief-assisted hydrothermal process Yang XG, Li C, Mo MS, Zhan JH, Yu WC, Yan Y, Qian YT |
600 - 613 |
Morphology of and dislocation movement in n-C40H82 paraffin crystals grown from solution Plomp M, van Enckevort WJP, van Hoof PJCM, van de Streek CJ |
614 - 624 |
Constant composition kinetics study of carbonated apatite dissolution Tang RK, Henneman ZJ, Nancollas GH |
625 - 633 |
Containerless solidification of highly undercooled Al2O3-ZrO2 eutectic melts on an aero-acoustic levitator Li MJ, Nagashio K, Kuribayashi K |