Journal of Crystal Growth

Journal of Crystal Growth, Vol.268, No.3-4 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (51 articles)

329 - 335	Epitaxial ferromagnet-semiconductor heterostructures for electrical spin injection Ploog KH
336 - 341	Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells Jiang DS, Bian LF, Liang XG, Chang K, Sun BQ, Johnson S, Zhang YH
342 - 345	Electrochemically self-assembled nanostructure arrays Stefanita CG, Pramanik S, Banerjee A, Sievert M, Baski AA, Bandyopadhyay S
346 - 358	Transfer of InP epilayers by wafer bonding Hjort K
359 - 363	Silicon nitride and polyimide capping layers on InGaAs/InP PIN photodetector after sulfur treatment Ravi MR, DasGupta A, DasGupta N
364 - 368	InGaAs/GaAs quantum well circular ring lasers fabricated by laser direct writing and pulsed anodic oxidation Liu CY, Yuan S
369 - 374	Selective growth of GaAs quantum dots on the triangle nanocavities bounded by SiO2 mask on Si substrate by MBE Zheng YB, Chua SJ, Huan CHA, Miao ZL
375 - 377	Influence of substrate conductivity on layer thickness in LPE GaAs Vera-Hernandez J, de Jesus P, de Anda F, Rojas-Lopez M
378 - 383	Measurement of conduction band minima in ordered and disordered GaInP Prins AD, Sly JL, Dunstan DJ, Nagata A, Kobayashi T
384 - 388	Understanding the inductively coupled argon plasma-enhanced quantum well intermixing Mei T, Djie HS, Aroklaraj J, Sookdhis C
389 - 395	Chemical beam epitaxial growth of AlInAs and investigations of electrolytes for ECV profiling Udhayasankar M, Kumar J, Ramasamy P
396 - 400	Study of InGaAsP and GaInP layers grown by MOCVD in pure N-2 ambient for InGaAsP/GaAs single QW LD structures Zhang BL, Tang XH, Huang GS, Zhu JY
401 - 405	Doping effect on the intermixing in GaInAsP/InP multiple quantum well structures grown using all solid sources Zhang DH, Sun L, Yoon SF
406 - 409	Temperature dependence of electron ionization coefficients of InGaP measured in InGaP/GaAs/InGaP DHBT's Neo WP, Wang H, Radhakrishnan K
410 - 414	A comparative study of metamorphic InP/InGaAs heterojunction bipolar transistors (MHBTs) grown by gas and solid source molecular beam epitaxy (MBE) Yang H, Radhakrishnan K, Wang H
415 - 419	Lasing properties of AlGaAs/GaAs material diode lasers grown by MOCVD using TBA in N-2 ambient Bo BX, Tang XH, Zhang BL, Huang GS, Zhang YC, Chuan TS
420 - 425	Metalorganic chemical vapor deposition and spontaneous emission of self-assembled InAs quantum dots in open space and in a planar microcavity Zhang XH, Dong JR, Chua ST, Zhang J, Yong A
426 - 431	Temperature dependence of photoluminescence intensity from AlGaInP/GaInP multi-quantum well laser structures Liu CY, Yuan S, Dong JR, Chua SJ
432 - 436	MOCVD growth of InGaAsP/InGaAs multi-step-quantum well structure for QWIP application by using TBA and TBP in N-2 ambient Zhao JH, Tang XH, Mei T, Zhang BL, Huang GS
437 - 443	Simulation of 1.55 mu m distributed feedback semiconductor laser: investigation of dielectric grating yielding high coupling effect Low KS, Teng JH, Chua SJ
444 - 448	LP-MOVPE growth of InAs quantum dots using tertiarybutylarsine (TBA) in pure N-2 ambient Huang GS, Tang XH, Zhang BL, Zhang YC, Tjin SC
449 - 456	Solid-state lighting: failure analysis of white LEDs Narendran N, Gu Y, Freyssinier JP, Yu H, Deng L
457 - 465	GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3 mu m device applications Calvez S, Hopkins JM, Smith SA, Clark AH, Macaluso R, Sun HD, Dawson MD, Jouhti T, Pessa M, Gundogdu K, Hall KC, Boggess TF
466 - 469	Study of infrared luminescence from Er-implanted GaN films Chen WD, Song SF, Zhu JJ, Wang XL, Chen CY, Hsu CC
470 - 474	Determination of nitrogen composition in GaNxAs1-x epilayer on GaAs Fan WJ, Yoon SF, Cheah WK, Loke WK, Ng TK, Wang SZ, Liu R, Wee A
475 - 477	Growth of GaN films by chloride vapour phase epitaxy Varadarajan E, Kumar J, Dhanasekaran R
478 - 483	Inverted hexagonal pits formation in AlInGaN epilayer Soh CB, Liu W, Chua SJ, Tripathy S, Chi DZ
484 - 488	Study of different type of dislocations in GaN thin films Yu LP, Shi JY, Wang YZ, Zhang H
489 - 493	Study of activation of beryllium implantation in gallium nitride Wang HT, Tan LS, Chor EF
494 - 498	Depth-resolved luminescence imaging of epitaxial lateral overgrown GaN using ionoluminescence Teo EJ, Bettiol AA, Osipowicz T, Hao M, Chua SJ, Liu YY
499 - 503	Effects of surface plasma treatment on n-GaN ohmic contact formation Li LK, Tan LS, Chor EF
504 - 508	Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures Chen Z, Chua SJ, Yuan HR, Liu XL, Lu DC, Han PD, Wang ZG
509 - 514	Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition Liu W, Soh CB, Chen P, Chua SJ
515 - 520	Structural analysis of metalorganic chemical vapor deposited AlN nucleation layers on Si(111) Zang KY, Wang LS, Chua SJ, Thompson CV
521 - 526	Optical transitions in InGaN/GaN quantum wells: effects of the piezoelectric field Zhang XH, Liu W, Chua SJ
527 - 530	Fabrication of matrix-addressable micro-LED arrays based on a novel etch technique Choi HW, Jeon CW, Dawson MD
531 - 535	Variable band gap ZnO nanostructures grown by pulsed laser deposition Kukreja LM, Barik S, Misra P
536 - 542	Laser spectroscopy of epitaxial manganese and zinc fluoride films on silicon Gastev S, Hoffman KR, Kaveev AK, Reeves RJ, Sokolov NS
543 - 546	Optical properties of titania films prepared by off-plane filtered cathodic vacuum arc Zhao ZW, Tay BK, Lau SP, Yu GQ
547 - 553	Comparison of charge-retention times in n- and p-type 4H-SiC MOS capacitors as non-volatile memory elements Cheong KY, Dimitrijev S, Han J
554 - 559	Electronic structure and excited-state properties of Perovskite-like oxides Ravindran P, Vidya R, Fjellvag H, Kjekshus A
560 - 563	Synthesis of germanium nanodots on silicon using an anodic alumina membrane mask Chen Z, Lei Y, Chew HG, Teo LW, Choi WK, Chim WK
564 - 567	Preparation of rutile TiO2 thin films by mist plasma evaporation Huang H, Yao X
568 - 574	Synthesis and photoluminescence of Eu3+-doped (Y,Gd)BO3 phosphors by a mild hydrothermal process Wang YH, Endo T, He L, Wu CF
575 - 579	Nonlinear optical absorption of ZnSe nanocrystals embedded in silica glasses Wang YP, Wang MQ, Yao X, Kong FT, Zhang LY
580 - 584	Optical responses of ZnSe quantum dots in silica gel glasses Wang YP, Yao X, Wang MQ, Kong FT, He JF
585 - 589	Properties of nanocrystalline ZnS : Mn Karar N, Raj S, Singh F
590 - 595	Investigation of individual CuO nanorods by polarized micro-Raman scattering Yu T, Zhao X, Shen ZX, Wu YH, Su WH
596 - 601	Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique Lee HW, Lau SP, Wang YG, Tse KY, Hng HH, Tay BK
602 - 606	Nanoscale cube-on-cube growth and characterization of SrS : Eu, Sm optical memory material Teo KL, Chen C, Chong TC
607 - 611	The thermal effect of GaN Schottky diode on its I-V characteristics Chung SW, Hwang WJ, Lee CC, Shin MW