289 - 294 |
A study of the degree of relaxation of AlGaN epilayers on GaN template Zhang JC, Wu MF, Wang JF, Liu JP, Wang YT, Chen J, Jin RQ, Yang H |
295 - 300 |
MBE growth and optical properties of digital-alloy 1.55 mu m multi-quantum wells Song JD, Choi WJ, Kim JM, Chang KS, Lee YT |
301 - 308 |
Arsenic cross-contamination in GaSb/InAs superlattices Jackson EM, Boishin GI, Aifer EH, Bennett BR, Whitman LJ |
309 - 315 |
Structural characterization of CdTe layers grown on (0001) sapphire by MOCVD Zuniga-Perez J, Tena-Zaera R, Munoz-Sanjose V |
316 - 321 |
Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer Zhang BS, Wu M, Liu JP, Chen J, Zhu JJ, Shen XM, Feng G, Zhao DG, Wang YT, Yang H, Boyd AR |
322 - 328 |
Metalorganic vapor-phase epitaxy of III/V phosphides with tertiarybutylphosphine and tertiarybutylarsine Chen GY, Cheng D, Hicks RF, Noori AM, Hayashi SL, Goorsky MS, Kanjolia R, Odedra R |
329 - 339 |
A melt clusterization within the interfacial boundary layer and its hydrodynamics modelling at the microgravity semiconductor single crystal growth Ginkin V, Kartavykh A, Zabudko M |
340 - 345 |
The tri-methyl-Sb flow and the surfactant time effect on InGaAsN/GaAs-strained MQWs grown by MOCVD Kim TS, Park JY, Cuong TV, Lee HJ, Suh EK, Hong CH |
346 - 350 |
GaN/GaAs(100) superlattices grown by metalorganic vapor phase epitaxy using dimethylhydrazine precursor Sormunen J, Riikonen J, Sopanen M, Lipsanen H |
351 - 358 |
Anomalous temperature-dependent photoluminescence characteristic of as-grown GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy Ng TK, Yoon SF, Loke WK, Wicaksono S |
359 - 363 |
The incorporation behavior of arsenic and antimony in GaAsSb/GaAs grown by solid source molecular beam epitaxy Wu SD, Guo LW, Wang WX, Li ZH, Shang XZ, Hu HY, Huang Q, Zhou JM |
364 - 369 |
Characterization of InAs quantum dots on lattice-matched InAlGaAs/InP superlattice structures Huang XQ, Liu FQ, Che XL, Liu JQ, Lei W, Wang ZG |
370 - 375 |
Growth of Na modified potassium lithium niobate crystal by the Czochralski method Jun BE, Kim CS, Kim DJ, Hwang YH, Kim HK, Kim JN |
376 - 379 |
Diffusion of vanadium in GaAs Bchetnia A, Soulssi M, Rebey A, El Jani B |
380 - 383 |
Investigation of the role of cadmium sulfide in the surface passivation of lead sulfide quantum dots Fernee M, Watt A, Warner J, Riches J, Heckenberg N, Rubinsztein-Dunlop H |
384 - 395 |
Surface chemistry and transport effects in GaN hydride vapor phase epitaxy Segal AS, Kondratyev AV, Karpov SY, Martin D, Wagner V, Ilegems M |
396 - 401 |
Low-temperature Si epitaxy on large-grained polycrystalline seed layers by electron-cyclotron resonance chemical vapor deposition Rau B, Sieber I, Schneider J, Muske M, Stoger-Pollach M, Schattschneider P, Gall S, Fuhs W |
402 - 408 |
The influences of supersaturation on LPE growth of GaN single crystals using the Na flux method Morishita M, Kawamura F, Kawahara M, Yoshimura M, Mori Y, Sasaki T |
409 - 419 |
Deposition of bulk GaN from solution in gallium under high N-2 pressure on silicon carbide and sapphire substrates Bochowski M, Grzegory I, Krukowski S, Lucznik B, Wroblewski M, Kamler G, Borysiuk J, Kwiatkowski P, Jasik K, Porowski S |
420 - 426 |
Large-size beta-Ga2O3 single crystals and wafers Villora EG, Shimamura K, Yoshikawa Y, Aoki K, Ichinose N |
427 - 432 |
Crystal growth of Ce: PrF3 by micro-pulling-down method Yoshikawa A, Satonaga T, Kamada K, Sato H, Nikl M, Solovieva N, Fukuda T |
433 - 437 |
Growth and properties of Tm : YAG crystals Song PX, Zhao ZW, Xu XD, Jang BX, Deng PZ, Xu J |
438 - 445 |
Microwave-assisted self-assembled ZnS nanoballs Zhao Y, Hong JM, Zhu JJ |
446 - 454 |
Preparation and characterization of Si sheets by renewed SSP technique Ai B, Shen H, Ban Q, Wang XJ, Liang ZC, Liao XB |
455 - 461 |
Rate-determining process in chemical vapor deposition of SiC on off-axis alpha-SiC (0001) Nakamura S, Kimoto T, Matsunami H |
462 - 468 |
Reconstruction of the beta-Ga2O3 (100) cleavage surface to hexagonal GaN after NH3 nitridation Villora EG, Shimamura K, Aoki K, Ichinose N |
469 - 474 |
Oriented growth of benzophenone crystals from undercooled melts Wang WL, Huang WD, Ma YH, Zhao JL |
475 - 480 |
Nucleation, growth and characterization of L-tartaric acid-nicotinamide NLO crystals Hameed ASH, Lan CW |
481 - 485 |
Growth and spectroscopic properties of Er3+ single doped and Er3+-Yb3+ co-doped YAl3(BO3)(4) crystals You WX, Lin YF, Chen YJ, Luo ZD, Huang YD |
486 - 490 |
Flux growth of BPO4 crystals Li ZH, Wu YC, Fu PZ, Pan SL, Chen CT |
491 - 497 |
Influence of ambient gases on the morphology and photoluminescence of ZnO nanostructures synthesized with nickel oxide catalyst Kim TY, Kim JY, Kumar MS, Suh EK, Nahm KS |
498 - 504 |
Self-organized nanocomb of ZnO fabricated by Au-catalyzed vapor-phase transport Xu CX, Sun XW, Dong ZL, Yu MB |
505 - 510 |
Self-catalytic branch growth of SnO2 nanowire junctions Chen Y, Campbell L, Zhou WL |
511 - 516 |
Temperature fluctuations in a LiNbO3 melt during crystal growth Suzuki T |
517 - 526 |
CuIn1-xGaxS2 wide gap absorbers grown by close-spaced vapor transport Moudakir T, Djessas K, Masse G |
527 - 534 |
Seed-mediated synthesis of uniform ZnO nanorods in the presence of polyethylene glycol Liu XM, Zhou YC |
535 - 541 |
Preparation and characterization of Ni-incorporated FeS2 single crystals Ho CH, Huang CE, Wu CC |
542 - 546 |
Efficiency optimization of p-type doping in GaN : Mg layers grown by molecular-beam epitaxy Naranjo FB, Calleja E, Bougrioua Z, Trampert A, Kong X, Ploog KH |
547 - 552 |
Crystallization behavior and hydrophilic performances of V2O5-TiO2 filims prepared by sol-gel dip-coating Xin J, Chen XM |
553 - 559 |
Oxygen-pressure dependence of the crystallinity of MgO films grown on Si(100) by PLD Chen TL, Xiao ML, Zhang S, Hua RZ |
560 - 567 |
Correlation between interfacial structure and c-axis-orientation of LiNbO3 films grown on Si and SiO2 by electron cyclotron resonance plasma sputtering Akazawa H, Shimada M |
568 - 572 |
Diffusion of Zn in stoichiometric LiTaO3 Song H, Shin H, Cheong M, Myoung J, Lee M |
573 - 581 |
Effect of molecular weight of polystyrensulfonic acid sodium salt polymers on the precipitation kinetics of sodium bicarbonate Martinez-Cruz N, Carrillo-Romo F, Jaramillo-Vigueras D |
582 - 588 |
Growth of large dimension BaWO4 crystal by the Czochralski method Ge WW, Zhang HJ, Wang JY, Liu JH, Xu XG, Hu XB, Juan L, Jiang MH |
589 - 592 |
Mixed magnesium and nickel nitrate hexahydrates: an unexpected restructuring Cohen S, Wollmann G, Ben-Dor L, Marcus Y |
593 - 603 |
The effect of calcium cations on the precipitation of barium sulfate 2: calcium ions in the presence of organic additives Jones F, Oliviera A, Parkinson GM, Rohl AL, Stanley A, Upson T |
604 - 614 |
Determination of kinetic parameters of crystal growth rate of borax in aqueous solution by using the rotating disc technique Sahin O, Aslan F, Ozdemir M, Durgun M |
615 - 623 |
Mechanochemical-hydrothermal synthesis of hydroxyapatite from nonionic surfactant emulsion precursors Chen CW, Riman RE, TenHuisen KS, Brown K |
624 - 632 |
Effect of seeded surface area on crystal size distribution in glycine batch cooling crystallization: a seeding methodology Lung-Somarriba BLM, Moscosa-Santillan M, Porte C, Delacroix A |
633 - 645 |
Investigation of the growth rate of beta-cyclodextrin in water during both flow-cell and batch experiments Kohl M, Puel F, Klein JP, Hoff C, Monnier O |
646 - 654 |
Crystallization of calcium oxalate monohydrate at dipalmitoylphosphatidylcholine monolayers in the presence of chondroitin sulfate A Ouyang HM, Deng SP, Zhong JP, Tieke B, Yu SH |
655 - 661 |
Different shapes of spherical vaterite by photo-induced cis-trans isomerization of an azobenzene-containing polymer in a mixture of dimethyl sulfoxide and water Keum DK, Na HS, Naka K, Chujo Y |
662 - 673 |
Growths of bubble/pore sizes in solid during solidification - an in situ measurement and analysis Wei PS, Huang CC, Wang ZP, Chen KY, Lin CH |
674 - 684 |
Surface growth mechanisms and structural faulting in the growth of large single and spherulitic titanosilicate ETS-4 crystals Miraglia PQ, Yilmaz B, Warzywoda J, Sacco A |
685 - 690 |
Oscillation of Y2BaCuO5 particle concentration in the melt-grown YBaCuO bulk superconductors Zmorayova K, Diko P, Sefcikova M, Granados X, Sandiumenge F, Obradors X |
691 - 698 |
Crystal growth rate limited by step length - the case of oxygen-deficient TiO2 exposed to oxygen McCarty KF, Bartelt NC |
699 - 710 |
Explanation of some peculiarities of crystal morphology deduced from the BFDH law Prywer J |
711 - 721 |
Study of the ZnO crystal growth by vapour transport methods Tena-Zaera R, Martinez-Tomas MC, Hassani S, Triboulet R, Munoz-Sanjose V |
722 - 728 |
Rapid synthesis of copper nanoparticles by sodium hypophosphite reduction in ethylene glycol under microwave irradiation Zhu HT, Zhang CY, Yin YS |
729 - 733 |
Growth of SrFe12O19 nanowires under an induced magnetic field Wang J, Zeng C |