329 - 339 |
Geostrophic turbulence in CZ silicon melt under CUSP magnetic field Kishida Y, Tamaki T, Okazawa K, Ohashi W |
340 - 346 |
New solid-state sensing materials for gaseous dimethylcadmium, di-iso-propyltelluride and dimethylmercury Pardoe JAJ, Cole-Hamilton DJ, Hails JE |
347 - 356 |
An electrochemical study of photoetching of heteroepitaxial GaN: kinetics and morphology Macht L, Kelly JJ, Weyher JL, Grzegorczyk A, Larsen PK |
357 - 362 |
Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(311)B substrates Caroff P, Bertru N, Platz C, Dehaese O, Le Corre A, Loualiche S |
363 - 367 |
Optical study of GaN epilayer grown by metalorganic chemical vapor deposition and pulsed laser deposition Premchander P, Manoravi P, Joseph M, Baskar K |
368 - 374 |
MOVPE growth optimization for optically efficient GaInNAs quantum well structure Kim KS, Lim SJ, Kim KH, Yoo JR, Kim T, Park YJ |
375 - 380 |
High-density, uniform gallium nitride nanorods grown on Au-coated silicon substrate Cao CB, Xiang X, Zhu HS |
381 - 385 |
In situ doping control for growth of n-p-n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy Gao F, Huang DD, Li JP, Liu C |
386 - 395 |
Empirical inference of in situ wafer sagging in Si epitaxy using pocket susceptor Wang TY |
396 - 402 |
Temperature dependence of the growth morphology in molecular beam epitaxy grown MnAs Park JB, Kim KH, Lee KJ, Kim DJ, Kim HJ, Ihm YE |
403 - 411 |
Effect of Zn doping on crystal growth and structure of the pseudo-ladder compound CaCu2O3 Sekar C, Krabbes G, Teresiak A |
412 - 423 |
The effect of nitrogen on void formation in Czochralski silicon crystals Voronkov VV, Falster R |
424 - 430 |
Influence of the nucleation layer morphology and epilayer structure on the resistivity of GaN films grown on c-plane sapphire by MOCVD Grzegorczyk AP, Macht L, Hageman PR, Weyher JL, Larsen PK |
431 - 438 |
Crystal growth of B12As2 on SiC substrate by CVD method Nagarajan R, Xu Z, Edgar JH, Baig F, Chaudhuri J, Rek Z, Payzant EA, Meyer HM, Pomeroy J, Kuball M |
439 - 445 |
Formation of silver nanorods by microwave heating in the presence of gold seeds Liu FK, Huang PW, Chang YC, Ko CJ, Ko FH, Chu TC |
446 - 450 |
Synthesis of MgxNi1-xO thin films with a band-gap in the solar-blind region Ji ZG, He ZP, Liu K, Zhao SC, He ZJ |
451 - 457 |
P-type Zno thin films fabricated by Al-N co-doping method at different substrate temperature Yuan GD, Ye ZZ, Qian Q, Zhu UP, Huang JY, Zhao BH |
458 - 463 |
Investigation of Mn-implanted n-Si by low-energy ion beam deposition Liu LF, Chen NF, Song SL, Yin ZG, Yang F, Chai CL, Yang SY, Liu ZK |
464 - 473 |
Influence of in situ HCl gas cleaning on n/p-type GaAs and AlGaAs regrown interfaces in MOCVD Mochizuki T, Tokumitsu Y, Fujii K, Cavallotti C |
474 - 480 |
Epitaxy and lattice distortion of V in MgO/V/MgO(001) heterostructures Huttel Y, Navarro E, Cebollada A |
481 - 488 |
On the energy and time resolution measurements of bismuth germanium silicon oxide (BGSO) crystal grown by Czochralski technique Vaithianathan V, Claude A, Samthanaraghavan P, Ramasamy P |
489 - 493 |
Preparation and characteristics of nanoporous PLZT ferroelectric thin films prepared via a one-step CSD process Cao ZP, Ding AL, He XY, Cheng WX, Qiu PS |
494 - 499 |
Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP(001) Zhao FA, Chen YH, Ye XL, Xu B, Jin P, Wu J, Wang ZG, Zhang CL |
500 - 503 |
Synthesis and characterization of lead-free K0.5Bi0.5TiO3 ferroelectrics by sol-gel technique Hou YD, Zhu MK, Hou L, Liu JB, Tang JL, Wang H, Yan H |
504 - 509 |
Growth and thermogravimetric study of Pb2Sr2R1-xCaxCu3O8+delta (R=Y, Tb) single crystals Bukowska E, Bukowski Z, Plackowski T, Zaleski A |
510 - 514 |
Analytical TEM characterization of the interfacial layer between ALD HfO2 film and silicon substrate Lu J, Aarik J, Sundqvist J, Kukli K, Harsta A, Carlsson JO |
515 - 519 |
Synthesis of barium titanate by electrostatic levitation Yu JD, Paradis PF, Ishikawa T, Yoda S, Miura I, Shan YJ |
520 - 528 |
Estimation of crystallization kinetics for an organic fine chemical using a modified continuous cooling mixed suspension mixed product removal (MSMPR) crystallizer Kougoulos E, Jones AG, Wood-Kaczmar MW |
529 - 534 |
Use of focused beam reflectance measurement (FBRM) and process video imaging (PVI) in a modified mixed suspension mixed product removal (MSMPR) cooling crystallizer Kougoulos E, Jones AG, Jennings KH, Wood-Kaczmar MW |
535 - 545 |
Crystal growth and dissolution processes at the calcite-water interface in the presence of zinc ions Freij SJ, Godelitsas A, Putnis A |
546 - 554 |
In vitro inhibition and dissolution of calcium oxalate by edible plant Trianthema monogyna and pulse Macrotyloma uniflorum extracts Das I, Gupta SK, Ansari SA, Pandey VN, Rastogi RP |
555 - 563 |
Effect of ultrasound on anti-solvent crystallization process Guo Z, Zhang M, Li H, Wang J, Kougoulos E |
564 - 571 |
Growth of hippuric acid single crystals and their characterisation for NLO applications Vijayan N, Babu RR, Gopalakrishnan R, Ramasamy P, Ichimura M, Palanichamy M |
572 - 576 |
Morphological micro-patterning of tubular-windows on crystalline K2V3O8 sheets Shi FN, Rocha J, Lopes AB, Trindade T |
577 - 585 |
On the mechanism of impurity influence on growth kinetics and surface morphology of KDP crystals - I: defect centres formed by bivalent and trivalent impurity ions incorporated in KDP structure-theoretical study Rak M, Eremin NN, Eremina TA, Kuznetsov VA, Okhrimenko TM, Furmanova NG, Efremova EP |
586 - 593 |
On the mechanism of impurity influence on growth kinetics and surface morphology of KDP crystals - II: experimental study of influence of bivalent and trivalent impurity ions on growth kinetics and surface morphology of KDP crystals Eremina TA, Kuznetsova VA, Eremin NN, Okhrimenko TM, Furmanova NG, Efremova EP, Rak M |
594 - 602 |
Effects of vicinal steps on the island growth and orientation of epitaxially grown perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate Sazaki G, Fujino T, Usami N, Ujihara T, Fujiwara K, Nakajima K |
603 - 613 |
Growth of nordstrandite: effect of carboxylates on surface morphology Peskleway CD, Henderson GS, Wicks FJ |
614 - 623 |
Growth of nordstrandite: effect of chloride on surface morphology Peskleway CD, Henderson GS, Wicks FJ |
624 - 628 |
Atomic force microscopy study on crystal growth of Cu (2+)-doped L-arginine phosphate monohydrate crystals Geng YL, Xu D, Wang YL, Du W, Liu HY, Zhang GH, Wang XQ, Sun DL |
629 - 637 |
Study of the oxygen incorporation during growth of large CaF2-crystals Molchanov A, Friedrich J, Wehrhan G, Muller G |
638 - 645 |
Synthesis and crystal structure of sodium-bismuth polyphosphate NaBi(PO3)(4) Jaouadi K, Zouari N, Mhiri T, Pierrot M |
646 - 650 |
Low-temperature synthesis and benzene-thermal growth of nanocrystalline boron nitride Chen LY, Gu YL, Li ZF, Qian YT, Yang ZH, Ma JH |