Journal of Crystal Growth

Journal of Crystal Growth, Vol.210, No.4 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (53 articles)

421 - 428	Formation and dissolution of InAs quantum dots on GaAs Heyn C, Endler D, Zhang K, Hansen W
429 - 434	RHEED monitoring of AlN epitaxial growth by plasma-assisted molecular beam epitaxy Ferro G, Okumura H, Ide T, Yoshida S
435 - 443	Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation Zauner ARA, Weyher JL, Plomp M, Kirilyuk V, Grzegory I, van Enckevort WJP, Schermer JJ, Hageman PR, Larsen PK
444 - 450	Experimental and numerical studies of Ar+-laser-assisted Si doping of GaAs with SiBr4 by chemical beam epitaxy Shi BQ, Tu CW
451 - 457	Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers Liu HY, Xu B, Gong Q, Ding D, Liu FQ, Chen YH, Jiang WH, Ye XL, Li YF, Sun ZZ, Zhang JF, Liang JB, Wang ZG
458 - 462	Effects of phosphorous beam equivalent pressure on GaInAsP/GaAs grown by solid source molecular beam epitaxy with a valve phosphorous cracker cell Wang XZ, Zhang DH, Zheng HQ, Yoon SF, Kam CH, Shi W, Raman A
463 - 470	Effect of strain in the barrier layer on structural and optical properties of highly strained In0.77Ga0.23As/InGaAs multiple quantum wells Mitsuhara M, Ogasawara M, Sugiura H
471 - 477	Directional solidification of InxGa1-xAs Hashio K, Tatsumi M, Kato H, Kinoshita K
478 - 486	Low-temperature growth of GaN by atomic nitrogen based on a dielectric barrier discharge Kim J, Byun D, Kim JS, Kum DW
487 - 495	Effect of heat treatment on phase transformation of aluminum nitride ultrafine powder prepared by chemical vapor deposition Wang MC, Tsai MS, Wu NC
496 - 504	Formation mechanism of InxGa1-xAs bridge layers on patterned GaAs substrates Iida S, Hayakawa Y, Koyama T, Kumagawa M
505 - 510	Comparative analysis of characteristics of Si, Mg, and undoped GaN Kim KS, Oh CS, Lee WH, Lee KJ, Yang GM, Hong CH, Suh EK, Lim KY, Lee HJ, Byun DJ
511 - 515	Investigation of preparation and properties of epitaxial growth GaN film on Si(111) substrate Zhang HX, Ye ZZ, Zhao BH
516 - 520	Effect of gallium incorporation on the physical properties of ZnO films grown by spray pyrolysis Reddy KTR, Gopalaswamy H, Reddy PJ, Miles RW
521 - 526	Characterization and growth of ZnSTe epilayers by hot-wall epitaxy Yu YM, Nam S, Rhee JK, O B, Lee KS, Choi YD
527 - 531	High-density silicon and silicon nitride cones Chen Y, Guo LP, Shaw DT
532 - 540	The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski silicon single crystals grown in a transverse magnetic field Machida N, Hoshikawa K, Shimizu Y
541 - 553	Oxygen and carbon transfer during solidification of semiconductor grade silicon in different processes Ribeyron PJ, Durand F
554 - 572	Dopant transport during semiconductor crystal growth - Axial versus transverse magnetic fields Hirtz JM, Ma N
573 - 586	Radial segregation due to weak convection in a floating zone Winkler C, Amberg G, Carlberg T
587 - 594	Growth of BiSrCaCuO thin films by MOCVD Stejskal J, Leitner J, Sedmidubsky D, Nevriva M, Beran P, Strejc A
595 - 599	Growth of SiC nanorods prepared by carbon nanotubes-confined reaction Tang CC, Fan SS, Dang HY, Zhao JH, Zhang C, Li P, Gu Q
600 - 612	In situ mesa etching and immediate regrowth in a HVPE reactor for buried heterostructure device fabrication Messmer ER, Lindstrom T, Lourdudoss S
613 - 622	Step bunching behaviour on the {0001} surface of hexagonal SiC Ohtani N, Katsuno M, Aigo T, Fujimoto T, Tsuge H, Yashiro H, Kanaya M
623 - 628	Drastic effect of Mo on diamond nucleation in the system of MgCO3-CaCO3-graphite at 7.7 GPa Sato K
629 - 636	Homoepitaxial growth of 6H-SiC thin films by metal-organic chemical vapor deposition using bis-trimethylsilymethane precursor Jeong JK, Na HJ, Choi J, Hwang CS, Kim HJ, Bahng W
637 - 645	Periodic structure during unidirectional solidification for peritectic Cd-Sn alloys Yasuda H, Notake N, Tokieda K, Ohnaka I
646 - 650	Crystal growth of Na(V,Ti)(2)O-5 Colonescu L, Ammerahl U, Gross R, Kierspel H, Buchner B
651 - 654	Epitaxial growth of MgO films on Si(111) by metal organic chemical vapor deposition Sung MM, Kim C, Kim CG, Kim Y
655 - 662	Effect of Yb3+ content on purity and crystal growth of Ba2NaNb5O15 Lebbou K, Itagaki H, Yoshikawa A, Fukuda T, Carillo-Romo F, Boulon G, Brenier A, Cohen-Adad MT
663 - 669	Growth of Tb3Ga5O12 fiber and bulk crystals using micro-pulling-down apparatus Chani VI, Yoshikawa A, Machida H, Satoh T, Fukuda T
670 - 676	Determination of the Li/Nb ratio in LiNbO3 crystals grown by Czochralski method with K2O added to the melt Serrano MD, Bermudez V, Arizmendi L, Dieguez E
677 - 682	Phase diagram of the SrS-Ga2S3 system and its application to the single-crystal growth of SrGa2S4 Komatsu C, Takizawa T
683 - 693	Growth of Cr : LiCaAlF6 and Cr : LiSrAlF6 by the Czochralski method Klimm D, Lacayo G, Reiche P
694 - 698	Growth of pure and RE3+-doped Y2O3 single crystals by LHPG technique Goutaudier C, Ermeneux FS, Cohen-Adad MT, Moncorge R
699 - 703	Growth and luminescence mechanisms of Ba2ErCl7: a new laser up-conversion crystal Zhou GY, Han JR, Zhang SJ, Cheng ZX, Chen HC
704 - 718	An analysis of flow and mass transfer during the solution growth of potassium titanyl phosphate Vartak B, Kwon YI, Yeckel A, Derby JJ
719 - 734	Deposition of calcium carbonate films by a polymer-induced liquid-precursor (PILP) process Gower LB, Odom DJ
735 - 740	Influence of solution conditions on deposition of calcium phosphate on titanium by NaOH-treatment Feng QL, Cui FZ, Wang H, Kim TN, Kim JO
741 - 745	Metastable zonewidth, induction period and interfacial energy of zinc tris(thiourea) sulfate Ushasree PM, Muralidharan R, Jayavel R, Ramasamy P
746 - 752	Pressure and concentration dependence of nucleation kinetics for crystallization of subtilisin Waghmare RY, Pan XJ, Glatz CE
753 - 760	In situ monitoring and control of lysozyme concentration during crystallization in a hanging drop Schwartz AM, Berglund KA
761 - 766	Crystallization of the E. coli polyamine-induced protein: a novel procedure based on the concept of ionic strength reducers Papanikolau Y, Gessmann R, Petratos K, Igarashi K, Kokkinidis M
767 - 771	Numerical investigation of natural and forced solutal convection above the surface of a growing crystal Brailovskaya VA, Zilberberg VV, Feoktistova LV
772 - 776	Single-crystal growth of sulphospinel CuIr2S4 from Bi solution Matsumoto N, Nagata S
777 - 782	Observation of the periodic fluctuant dendritic structure in an Al-38 wt% Cu hypereutectic alloy processed by ACRT-B method Ma D, Jie WQ
783 - 787	Growth of pyroxene-type MnGeO3 and (Mn,Mg)GeO3 crystals by the floating-zone method Matsumura H, Mamiya M, Takei H
788 - 796	Effects of system parameters on MHD flows in rotating magnetic fields Gelfgat Y, Krumins J, Li BQ
797 - 810	Dynamic stability analysis of the solidification of binary melts in the presence of a mushy region: changeover of instability Alexandrov DV, Ivanov AO
811 - 814	Controllable cubic and hexagonal GaN growth on GaAs(001) substrates by molecular beam epitaxy Chen H, Li ZQ, Liu HF, Wan L, Zhang MH, Huang Q, Zhou JM, Luo Y, Han YJ, Tao K, Yang N
815 - 818	Growth and self-frequency doubling laser output of Nd : Ca4Gd0.275Y0.725O(BO3)(3) crystal Zhang HJ, Meng XL, Wang CQ, Zhu L, Liu XS, Dong CM, Cheng RP, Liu XM, Wang RH, Zhang SJ, Chow YT, Sun LK
819 - 823	Utilization of microgravity to improve the crystal quality of biologically important proteins: chaperonin-60, GrpE, B-subunit of V-type ATPase, and MIF Kitano K, Sasaki R, Nogi T, Fukami TA, Nakagawa A, Miki K, Tanaka I
824 - 827	Growth and characterization of a promising nonlinear optical organic crystal Prabhu SG, Rao PM