| 447 - 449 |
Atomic layer epitaxy of ZnTe by isothermal closed space sublimation
Larramendi EM, Puron E, Hernandez LC, Sanchez M, De Roux S, de Melo O, Romero-Paredes G, Pena-Sierra R, Tamura M |
| 450 - 455 |
Size control of InAs quantum dots on 2 degrees-off GaAs (100) substrate by the thickness of GaAs buffer layer
Kim HJ, Park YJ, Kim EK, Kim TW |
| 456 - 460 |
Study of quaternary GaInAsSb alloy by scanning transmission electron microscopy
Li SW, Koike K, Schulze-Kraasch F, Kubalek E |
| 461 - 465 |
Wide-band-gap ZnMgBeSe alloys grown onto GaAs by molecular beam epitaxy
Tournie E, Vigue F, Laugt M, Faurie JP |
| 466 - 483 |
GaN decomposition in H-2 and N-2 at MOVPE temperatures and pressures
Koleske DD, Wickenden AE, Henry RL, Culbertson JC, Twigg ME |
| 484 - 488 |
The study of thermal stability during wet oxidation of AlAs
Jia HQ, Chen H, Wang WC, Wang WX, Li W, Huang Q, Zhou JM |
| 489 - 493 |
Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy
Gao F, Huang DD, Li JP, Kong MY, Sun DZ, Li JM, Zeng YP, Lin LY |
| 494 - 502 |
Chemical composition of InxGa1-xAs epilayers grown simultaneously on differently oriented GaAs substrates
De Caro L, Giannini C, De Riccardis MF, Nacucchi M, Tapfer L, Hey R, Daweritz L, Ploog KH |
| 503 - 511 |
Optical observation of solid-melt interface fluctuation due to Marangoni flow in a silicon liquid bridge
Sumiji M, Nakamura S, Azami T, Hibiya T |
| 512 - 517 |
Alloying effects in organometallic vapor phase epitaxial grown ZnxCd1-xSe epilayers on (001) InP
Zhang XB, Hark SK |
| 518 - 522 |
Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy
Li YF, Lin F, Xu B, Liu FQ, Ye WL, Ding D, Wang ZG |
| 523 - 527 |
Lateral thickness modulation of InGaAs layers on GaAs in selective area metalorganic vapor phase epitaxy
Terasawa T, Nakajima F, Motohisa J, Fukui T |
| 528 - 534 |
Thickness dependent surface morphologies and luminescent properties of ZnSe epilayers grown on (001) GaAs by metalorganic chemical vapor phase deposition
Zhang XB, Ha KL, Hark SK |
| 535 - 538 |
Photoluminescence enhancement of ZnO nanocrystallites with BN capsules
Li JF, Yao LZ, Ye CH, Mo CM, Cai WL, Zhang Y, Zhang LD |
| 539 - 544 |
Growth of Tm, Ho-codoped YLiF4 and LuLiF4 single crystals for eye-safe lasers
Bensalah A, Shimamura K, Sudesh V, Sato H, Ito K, Fukuda T |
| 545 - 549 |
Growth of oriented BN films prepared by electron cyclotron resonance CVD
Zhang SJ, Chen GH, Wang B, Zhang DX, Yan H |
| 550 - 556 |
Homogeneous precipitation of magnesium phosphates from seawater solutions
Golubev SV, Pokrovsky OS, Savenko VS |
| 557 - 564 |
The crystallization of calcium carbonate on porcine and human cardiac valves and the antimineralization effect of sodium alginate
Kanakis J, Malkaj P, Petroheilos J, Dalas E |
| 565 - 572 |
Morphological stability of a binary alloy: thermodiffusion and temperature-dependent diffusivity
Van Vaerenbergh S, Coriell SR, McFadden GB |
| 573 - 576 |
Epitaxial alloy films of zintl-phase Ca(Si1-xGex)(2)
Vogg G, Miesner C, Brandt MS, Stutzmann M, Abstreiter G |
| 577 - 587 |
Influence of growth parameters and melt convection on the solid-liquid interface during RF-floating zone crystal growth of intermetallic compounds
Hermann R, Priede J, Behr G, Gerbeth G, Schultz L |
