Journal of Crystal Growth

Journal of Crystal Growth, Vol.310, No.6 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (39 articles)

1029 - 1033	p-Type behavior in Li-doped Zn0.9Mg0.10 thin films Pan XH, Ye ZZ, Huang JY, Zeng YJ, He HP, Gu XQ, Zhu LP, Zhao BH
1034 - 1039	Numerical analysis of the influence of tilt of crucibles on interface shape and fields of temperature and velocity in the unidirectional solidification process Miyazawa H, Liu L, Hisamatsu S, Kakimoto K
1040 - 1048	GaAs1-xNx on GaAs(001): Nitrogen incorporation kinetics from trimethylgallium, tertiarybutylarsine, and 1,1-dimethylhydrazine organometallic vapor-phase epitaxy Beaudry JN, Masut RA, Desjardins P
1049 - 1056	Growth mechanisms and optical properties of GaAs-based semiconductor microstructures by selective area epitaxy Heiss M, Riedlberger E, Spirkoska D, Bichler M, Abstrelter G, Fontcuberta i Morral A
1057 - 1061	Synthesis and characterization of ZnGeN2 grown from elemental Zn and Ge sources Du K, Bekele C, Hayman CC, Angus JC, Piruz P, Kash K
1062 - 1068	Emissivity-correcting mid-infrared pyrometry for group-III nitride MOCVD temperature measurement and control Creighton JR, Breiland WG, Koleske DD, Thaler G, Crawford MH
1069 - 1074	Selective growth of InP/InGaAs < 010 > ridges: Physical and optical characterization Poole PJ, Aers GC, Kam A, Dalacu D, Studenikin S, Williams RL
1075 - 1080	HVPE of scandium nitride on 6H-SiC(0001) Edgar JH, Bohnen T, Hageman PR
1081 - 1087	Epitaxial growth of CdSexTe1-x thin films on Si(100) by molecular beam epitaxy using lattice mismatch graded structures Amir FZ, Clark K, Maldonado E, Kirk WP, Jiang JC, Ager JW, Yu KM, Walukiewicz W
1088 - 1092	Reducing dislocations of Al-rich AlGaN by combining AlN buffer and AlN/Al0.8Ga0.2N superlattices Peng MZ, Guo LW, Zhang J, Zhu XL, Yu NS, Yan JF, Liu HH, Jia HQ, Chen H, Zhou JM
1093 - 1098	Growth and morphological aspects of Pb[(Sc1/2Nb1/2)(0.58)Ti-0.42]O-3 single crystals by slow-cooling technique Rajasekaran SV, Singh AK, Jayavela R
1099 - 1106	Crystal growth technology of binary and ternary II-VI semiconductors for Photonic applications Trivedi SB, Wang CC, Kutcher S, Hommerich U, Palosz W
1107 - 1111	Pulsed selective epitaxial growth of hexagonal GaN microprisms Kim S, Schroeder JL, Sands TD
1112 - 1117	Convection-assisted chemical vapor deposition (CoCVD) of silicon on large-area substrates Kunz T, Burkert I, Auer R, Lovtsus AA, Talalaev RA, Makarov YN
1118 - 1123	Effects of Zn pre-exposure temperature on the microstructures of ZnO films grown on Si(001) substrates by plasma-assisted molecular beam epitaxy Lee JW, Choi JH, Han SK, Yang SM, Hong SK, Lee JY
1124 - 1131	Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition Fichtenbaum NA, Mates TE, Keller S, DenBaars SP, Mishra UK
1132 - 1136	Growth of InN on Ge(111) by molecular beam epitaxy using a GaN buffer Lieten RR, Degroote S, Leys M, Derluyn J, Kuijk M, Borghs G
1137 - 1141	Low-temperature growth of (110)-preferred Pb0.97La0.02(Zr0.88Sn0.10Ti0.02)O-3 antiferro electric thin films on LaNiO3/Si substrate Hao XH, Zhai JW
1142 - 1147	Numerical analysis of influence of crucible shape on interface shape in a unidirectional solidification process Miyazaw H, Liu LJ, Kakimoto K
1148 - 1153	Effect of magnesium doping on the growth and dielectric properties of (Pb,Sr)TiO3 thin films deposited by RF magnetron sputtering Li XT, Wang B, Li MR, Chen JF, Han GR, Weng WJ, Du PY
1154 - 1166	Kinetic inhibitor effects on methane/propane clathrate hydrate-crystal growth at the gas/water and water/n-heptane interfaces Kumar R, Lee JD, Song M, Englezos P
1167 - 1173	Physical properties of the 0.12 KLu(WO4)(2)-0.88 K2W2O7 solution and single-crystal growth of KLu(WO4)(2) Sole R, Silvestre O, Massons J, Gavalda JNA, Aguilo M, Diaz F
1174 - 1181	Lysozyme dimer association: Similarities and differences compared with lysozyme monomer association Onuma K, Inaka K
1182 - 1186	Structural, optical, spectral and thermal studies of nonlinear optical pure and deuterated L-alanine single crystals Kumar KS, Raghavalu T, Mathivanan V, Kovendhan M, Sivakumar B, Kumar GR, Raj SG, Mohan R
1187 - 1194	Nucleation and growth kinetics of struvite in a fluidized bed reactor Bhuiyan MIH, Mavinic DS, Beckie RD
1195 - 1201	Morphology controllable synthesis of nickel nanopowders by chemical reduction process Wang DP, Sun DB, Yu HY, Meng HM
1202 - 1205	Growth and properties of dichloro bis(triphenylphosphine oxide) zinc(II), a novel nonlinear optical crystal Li L, Wang ZP, Tian GR, Song XY, Sun SX
1206 - 1212	Growing and dissolving protein crystals in a levitated and containerless droplet Yin DC, Lu HM, Geng LQ, Shi ZH, Luo HM, Li HS, Ye YJ, Guo WH, Shang P, Wakayama NI
1213 - 1219	Solvent-controlled crystallization of zinc oxide nano (micro)disks Wang M, Hahn SH, Kim JS, Chung JS, Kim EJ, Koo KK
1220 - 1227	Controlled precipitation of nesquehonite (MgCO3 center dot 3H(2)O) by the reaction of MgCl2 with (NH4)(2)CO3 Wang Y, Li ZB, Demopoulos GP
1228 - 1238	Synthesis, crystal growth, structural, optical, thermal and mechanical properties of novel organic NLO material: Ammonium malate Babu GA, Bhagavannarayana G, Ramasamy P
1239 - 1244	Crystal growth of Tb0.9Dy0.1BaCO2O5+delta using travelling solvent floating zone method Stingaciu M, Pomjakushina E, Grimmer H, Trottmann M, Conder K
1245 - 1249	Effects of buffer layers on the orientation and dielectric properties of Ba(Zr0.20Ti0.80)O-3 thin films prepared by sol-gel method Gao LN, Song SN, Zhai JW, Yao X, Xu ZK
1250 - 1255	Semiconductor(BaSi2)/metal(CoSi2) Schottky-barrier structures epitaxially grown on Si(111) substrates by molecular beam epitaxy Suemasu T, Sasase M, Ichikawa Y, Kobayashi M, Tsukada D
1256 - 1263	Phase alignment and crystal orientation of Al3Ni in Al-Ni alloy by imposition of a uniform high magnetic field Wang CJ, Wang Q, Wang ZY, Li HT, Nakajima K, He JC
1264 - 1267	Flux growth of BaAlBO3F2 crystals Yue YC, Hu ZG, Chen CT
1268 - 1273	Room-temperature single-step synthesis of nanoparticle-decorated nanotubes Dong H, Han H, Lee SY
1274 - 1280	Experimental impurity segregation and numerical analysis based on variable solute distribution coefficients during multi-pass zone refining of aluminum Cheung N, Bertazzoli R, Garcia A
1281 - 1286	A new method of evaluation of melt/crystal interfacial energy and activation energy of diffusion Tanaka KK, Yamamoto T, Nagashima K, Tsukamoto K