| 1475 - 1480 |
Self-catalyzed growth of GaSb nanowires at low reaction temperatures
Schulz S, Schwartz M, Kuczkowski A, Assenmacher W |
| 1481 - 1485 |
Growth kinetics of ISOVPE HgCdTe epilayers obtained on alloyed CdTe substrates with different crystalline orientations
Gilabert U, Moyano E, Scarpettini A, Trigubo AB |
| 1486 - 1490 |
The behavior of powder sublimation in the long-term PVT growth of SiC crystals
Liu X, Chen BY, Song LX, Shi EW, Chen ZZ |
| 1491 - 1495 |
Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy
Zhao J, Zeng YP, Liu C, Li YB |
| 1496 - 1499 |
Synthesis and characterization of ZnCdO/ZnO multiple quantum wells by remote-plasma-enhanced MOCVD
Yamamoto K, Adachi M, Tawara T, Gotoh H, Nakamura A, Temmyo J |
| 1500 - 1504 |
MBE growth of atomically smooth non-polar cubic AlN
Schupp T, Lischka K, As DJ |
| 1505 - 1509 |
Atomic ordering of AlInP grown by MOVPE using TBP with different V/III ratios in pure ambient N-2
Zhao JH, Tang XH, Teng JH, Yong AM |
| 1510 - 1516 |
About the formation and avoidance of C and N related precipitates during directional solidification of multi-crystalline silicon from contaminated feedstock
Reimann C, Trempa M, Friedrich J, Muller G |
| 1517 - 1524 |
The influence of growth rate on the formation and avoidance of C and N related precipitates during directional solidification of multi crystalline silicon
Trempa M, Reimann C, Friedrich J, Muller G |
| 1525 - 1528 |
Ferromagnetic Fe3N films grown on GaN(0002) substrates by MOCVD
Tao ZK, Cui XG, Zhang R, Xiu XQ, Xie ZL, Zheng YD |
| 1529 - 1533 |
Temperature dependence of Zn1-xMgxO films grown on c-plane sapphire by metal organic vapor phase epitaxy
Thiandoume C, Lusson A, Galtier P, Sallet V |
| 1534 - 1537 |
Growth and characterization of GaSe single crystal
Abdullah MM, Bhagavannarayana G, Wahab MA |
| 1538 - 1545 |
Growth and characterization of YAG and LuAG epitaxial films for scintillation applications
Kucera M, Nitsch K, Nikl M, Hanus M, Danis S |
| 1546 - 1550 |
Low-angle misorientation dependence of the optical properties of InGaAs/InAlAs quantum wells
Young RJ, Mereni LO, Petkov N, Knight GR, Dimastrodonato V, Hurley PK, Hughes G, Pelucchi E |
| 1551 - 1556 |
Effect of a ZnO buffer layer on the properties of Ga-doped ZnO thin films grown on Al2O3 (0001) substrates at a low growth temperature of 250 degrees C
Shin SW, Sim KU, Pawar SM, Moholkar AV, Jung IO, Yun JH, Moon JH, Kim JH, Lee JY |
| 1557 - 1562 |
Microstructural investigation of ZnO films grown on (111) Si substrates by plasma-assisted molecular beam epitaxy
Yang SM, Han SK, Lee JW, Kim JH, Kim JG, Hong SK, Lee JY, Song JH, Hong SI, Park JS, Yao T |
| 1563 - 1571 |
Nucleation kinetics of nesquehonite (MgCO3 center dot 3H(2)O) in the MgCl2-Na2CO3 system
Cheng WT, Li ZB |
| 1572 - 1576 |
Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells
Gao B, Chen XJ, Nakano S, Kakimoto K |
| 1577 - 1580 |
Crystal growth of Ba3BP3O12 with BPO4-NaF flux
Zhang ZJ, Wang H, Hu GQ, Chen HH, Yang XX, Zhao JT |
| 1581 - 1589 |
Relationship between molecular weight of poly(ethylene)glycol and intermolecular interaction of Taka-amylase A monomers
Onuma K, Furubayashi N, Shibata F, Kobayashi Y, Kaito S, Ohnishi Y, Inaka K |
| 1590 - 1598 |
Relation between etch-pit morphology and step retreat velocity on a calcite surface in aspartic acid solution
Yoshino T, Kagi H, Kamiya N, Kokawa R |
| 1599 - 1604 |
Synthesis, growth and electrical characterization of L-tartaric acid-nicotinamide (LTN) single crystals
Gnanasambandam C, Perumal S |
| 1605 - 1609 |
Fabrication and microstructure of Cu2O nanocubes
Wang YQ, Liang WS, Satti A, Nikitin K |
| 1610 - 1616 |
Effect of conductive oxide buffering on structural and nanoscale electrical properties of ultrathin SrTiO3 films on Pt electrodes
Liang YC |
| 1617 - 1621 |
Substrate effects on the ordering nanostructure for La2/3Ca1/3MnO3 ultrathin films
Fu M, Xie QY, Gu MQ, Zhang YM, Wu XS, Pan FM, Chen XC, Wu LH, Pan GQ, Gao J |
| 1622 - 1626 |
Effects of rotating magnetic field on Bi12SiO20 crystal growth by vertical zone-melting technique
Liu Y, Ai F, Pan XH, Zhang Y, Zhou YF, Feng CD |
| 1627 - 1631 |
Crystal growth and characterization of non-centrosysmmetric polyphosphates, type III KNd(PO3)(4) and KGd(PO3)(4)
Sun TQ, Zhou XD, Wang XQ, Shen GQ, Kong YF, Xu JJ, Shen DZ |
| 1632 - 1635 |
Solution growth of crystalline silicon on glass in the In-Si-Mo system
Heimburger R, Teubner T, Dessmann N, Schramm HP, Boeck T, Fornari R |
| 1636 - 1644 |
Growth of Co ultrathin films on MgO(001)
Benamara O, Snoeck E, Blon T, Respaud M |
| 1645 - 1650 |
Composition and dissociation processes analysis in crystal growth of Nd:GGG by the Czochralski method
Asadian M, Hajiesmaeilbaigi F, Mirzaei N, Saeedi H, Khodaei Y, Enayati S |
| 1651 - 1658 |
Magnetic properties of Gd4Y3Pd3 single crystal
Talik E, Oboz M, Tran VH, Kusz J, Hofmeister W, Winiarski A |
| 1659 - 1660 |
Comments on "Analysis of twin formation in sphalerite-type compound semiconductors: A model study on bulk InP using statistical methods by M. Neubert, A. Kwasniewski and R. Fornari" J. Crystal Growth 310 (2008) 5270
Hurle DTJ, Dudley M |
| 1661 - 1662 |
Reply to "Comments on'Analysis of twin formation in sphalerite-type compound semiconductors: A model study on bulk InP using statistical methods" by DTJ Hurle and M. Dudley
Neubert M, Kwasniewski A, Fornari R |
| 1663 - 1663 |
Growth and characterization of glycine picrate-Remarkable secondharmonic generation in centrosymmetric crystal (vol 311, pg 3871, 2009)
Shakir M, Kushwaha SK, Maurya KK, Arora M, Bhagavannarayana G |
| 1664 - 1664 |
Atomistic examinations of the solid phase epitaxial growth of silicon (vol 311, pg 3195, 2009)
Gillespie B, Wadley HNG |
