Applied Surface Science

Applied Surface Science, Vol.175 Entire volume, number list

ISSN: 0169-4332 (Print)

In this Issue (130 articles)

1 - 5	Characterization of initial one monolayer growth of Ge on Si(100) and Si on Ge(100) Ikeda K, Yanase J, Sugahara S, Uchida Y, Matsumura M
6 - 11	Role of short-period superlattice buffers for the growth of Si0.75Ge0.25 alloy layers on Si(001) substrates Rahman MM, Matada H, Tambo T, Tatsuyama C
12 - 16	Low-temperature silicon nitride for thin-film electronics on polyimide foil substrates Gleskova H, Wagner S, Gasparik V, Kovac P
17 - 26	Self-assembled monolayers in the context of epitaxial film growth Doudevski I, Schwartz DK
27 - 32	Ultra-thin epitaxial Al and Cu films on CaF2/Si(111) Shusterman YV, Yakovlev NL, Schowalter LJ
33 - 35	Decay of silicon mounds: scaling laws and description with continuum step parameters Ichimiya A, Hayashi K, Williams ED, Einstein TL, Uwaha M, Watanabe K
36 - 42	Finite temperature simulation of ad-dimer diffusion between dimer row and trough on Si(001) Fu CC, Weissmann M, Saul A
43 - 48	Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxy Tsukidate Y, Suemitsu M
49 - 54	Influence of the electrochemical potential on energy landscapes near step- and island-edges: Ag(100) and Ag(111) Haftel MI, Einstein TL
55 - 61	Kinetic surface patterning in two-particle models of epitaxial growth Pimpinelli A, Videcoq A, Vladimirova M
62 - 68	Terrace-width distributions on vicinal surfaces: generalized Wigner surmise and extraction of step-step repulsions Einstein TL, Richards HL, Cohen SD, Pierre-Louis O, Giesen M
69 - 76	Defect controlled diffusion in the epitaxial growth of germanium on Si(100) Berrie CL, Liu B, Leone SR
77 - 82	Formation of uniform nanoscale Ge islands on Si(111)-7 x 7 substrate Masuda K, Shigeta Y
83 - 89	Imaging of the structure of ultra-thin cobalt silicide films by inelastically backscattered electrons Pronin II, Valdaitsev DA, Faradzhev NS, Gomoyunova MV, Luches P, Valeri S
90 - 95	Initial growth of titanium germanosilicide on Ge/Si(111) Yanagawa T, Nagai H, Ishii K, Matsumoto S
96 - 100	beta-FeSi2-base MIS diodes fabricated by sputtering method Ehara T, Sasaki Y, Saito K, Nakagomi S, Kokubun Y
XV - XVI	Special issue: Proceedings of the Tenth International Conference On Solid Films and Surfaces, Princeton, New Jersey, July 9-13, 2000 -Preface Bernasek S, Kahn A
101 - 104	Photoemission spectroscopy study of the charge accumulation at the K3Sb : Cs surface Ettema ARHF, Murtagh CF, Starnberg HI
105 - 110	Thermodynamic properties of alkali-chloride films Kawano H, Zhu Y, Sugimoto S
111 - 116	Comparative study of low-temperature chloride atomic-layer chemical vapor deposition of TiO2 and SnO2 Tarre A, Rosental A, Sammelselg V, Uustare T
117 - 122	The preparation of the Ag, (As0.33S0.67)(100-x) amorphous films by optically-induced solid state reaction and the films properties Wagner T, Kasap SO, Vlcek M, Frumar M, Nesladek P, Vlcek M
123 - 128	Breakdown of the bi-dimensional symmetry in bct Fe layers by epitaxy on Co(1 1 (2)over-bar-0) surface Valeri S, Giovanardi C, Borghi A, di Bona A, Luches P
129 - 133	Electromigration of single-layer clusters Pierre-Louis O, Einstein TL
134 - 139	Dendrimer-mediated growth of very flat ultrathin Au films Rar A, Zhou JN, Liu WJ, Barnard JA, Bennett A, Street SC
140 - 145	Kinetic surface structuring during homoepitaxy of GaAs(110): a model study Videcoq A, Vladimirova M, Pimpinelli A
146 - 156	Unusual growth phenomena of group III and group V elements on Si(111) and Ge(111) surfaces Vitali L, Ramsey MG, Netzer FP
157 - 162	Initial stages of porous Si formation on Si surfaces investigated by infrared spectroscopy Kimura Y, Kondo Y, Niwano M
163 - 168	Realization of ultrahigh-vacuum-compatible defect-free hydrogen terminated silicon surfaces with the use of a UHV contactless capacitance-voltage method Yoshida T, Hasegawa H
169 - 174	CdSe monolayers, embedded in BeTe: analysis of interface vibrations by Raman spectroscopy Wagner V, Wagner J, Muck T, Reuscher G, Waag A, Geurts J, Sadchikov N, Sorokin SV, Ivanov SV, Kop'ev PS
175 - 180	Evolution of interface excitations under phase transition in two-dimensional layer of Cs on GaAs(100) and (111) Alperovich VL, Tereshchenko OE, Litvinov AN, Terekhov AS
181 - 186	Current transport and capacitance-voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process Sato T, Kasai S, Hasegawa H
187 - 194	Sb adsorption on Si(111)-In(4 x 1) surface phase Rao BV, Gruznev D, Tambo T, Tatsuyama C
195 - 200	Correlated surface bands of the prototypical interface Sn/Si(111)-alpha-root 3 Charrier A, Perez R, Thibaudau F, Debever JM, Ortega J, Flores F, Themlin JM
201 - 206	Nature of the root 3 alpha to 3 x 3 reversible phase transition at low temperature in Sn/Ge (111) Le Lay G, Rad MG, Gothelid M, Karlsson UO, Avila J, Asensio MC
207 - 211	Electronic structure of carbolite films Ionov AM, Danzenbacher S, Molodtsov SL, Koepernik K, Richter M, Laubschat C
212 - 217	Theory of surface electromigration on heterogeneous metal surfaces Rous PJ
218 - 222	Adsorption and decomposition of t-butylphosphine (TBP) on a GaP(001)-(2 x 1) surface studied by LEED, HREELS, and TPD Fukuda Y, Kobayashi T, Mochizuki S, Yoshida H, Sanada N
223 - 229	In situ hall measurements of Si(111)/Cr, Si(111)/Fe and Si(111)Mg disordered systems at submonolayer coverages Galkin NG, Goroshko DL, Kosikov SI, Ivanov VA
230 - 236	Conductivity mechanisms in the ordered surface phases and two-dimensional monosilicides of Cr and Fe on Si(111) Galkin NG, Goroshko DL, Krivoshchapov ST, Zakharova ES
237 - 242	Surface electronic structure of the root 3x root 3, root 39x root 39 and 6x6 surfaces of Ag/Ge(111): observation of a metal to semiconductor transition Zhang HM, Balasubramanian T, Uhrberg RIG
243 - 248	Photoluminescence emission (1.3-1.4 mu m) from quantum dots heterostructures based on GaAs Egorov VA, Polyakov NK, Tonkikh AA, Petrov VN, Cirlin GE, Volovik BV, Zhukov AE, Musikhin YG, Cherkashin NA, Ustinov VM
249 - 254	Photoemission study of Mg/PTCDA/Se-GaAs Schottky contacts Park S, Kampen TU, Braun W, Zahn DRT
255 - 259	Conductance gap anomaly in scanning tunneling spectra of MBE-Grown (001) surfaces of III-V compound semiconductors Kasai S, Negoro N, Hasegawa H
260 - 264	Surface studies of single-crystalline refractory metal low-dimensional structures Bozhko SI, Chaika AN, Ionov AM, Chernykh AV, Malikov IV, Mikhailov GM
265 - 269	Changes in electron-phonon coupling across a bulk phase transition in copolymer films of vinylidene fluoride (70%) with trifluoroethylene (30%) Borca CN, Adenwalla S, Choi J, Robertson L, You H, Fridkin VM, Palto SP, Petukhova N, Dowben PA
270 - 275	Optical characterization of TiN/SiO2(1000 nm)/Si system by spectroscopic ellipsometry and reflectometry Postava K, Aoyama M, Yamaguchi T
276 - 280	Spectroellipsometric characterization of materials for multilayer coatings Postava K, Aoyama M, Yamaguchi T, Oda H
281 - 287	Interface magnetometry in a (Fe-6A/Ni-24A)(10) multilayer Capelli R, D'Addato S, Gazzadi GC, Pasquali L, Verucchi R, Nannarone S, Dudzik E, Mirone A, Sacchi M
288 - 293	Momentum dependence of the surface potential barrier for above-barrier electrons Read MN
294 - 298	Characterization of hot electron transmission tunneling through the gap potential in scanning hot electron microscopy Zhang BY, Furuya K
299 - 305	Transport, optical and thermoelectrical properties of Cr and Fe disilicides and their alloys on Si(111) Galkin NG, Konchenko AV, Vavanova SV, Maslov AM, Talanov AO
306 - 311	LT-STM/STS observations on electrical field etched surfaces of YBa2Cu3O7-delta single crystal Murakami H, Asaoka H, Sakai K, Ito T, Tonouchi M
312 - 318	Grain boundary diffusion in thin films under stress fields Ostrovsky AS, Bokstein BS
319 - 325	An experimental study of poly(9,9-dioctyl-fluorene) and its interfaces with Al, LIF and CsF Greczynski G, Salaneck WR, Fahlman M
326 - 331	Growth of organic films on passivated semiconductor surfaces: gallium arsenide versus silicon Kampen TU, Salvan G, Tenne D, Scholz R, Zahn DRT
332 - 336	On the coexistence of different polymorphs in organic epitaxy: alpha and beta phase of PTCDA on Ag(111) Krause B, Durr AC, Ritley KA, Schreiber F, Dosch H, Smilgies D
337 - 343	Adsorbed organic monolayers on crystalline substrate: the example of 8CB on MoS2 Lacaze E, Alba M, Goldmann M, Michel JP, Rieutord F
344 - 350	Photoenhanced current in thin organic layers Godlewski J, Jarosz G, Signerski R
351 - 356	ToF-SIMS study of organosilane self-assembly on aluminum surfaces Houssiau L, Bertrand P
357 - 362	XPS measurements on L-cysteine and 1-octadecanethiol self-assembled films: a comparative study Cavalleri O, Oliveri L, Dacca A, Parodi R, Rolandi R
363 - 368	Crystallinity of PTCDA films on silicon derived via optical spectroscopic measurements Salvan G, Himcinschi C, Kobitski AY, Friedrich M, Wagner HP, Kampen TU, Zahn DRT
369 - 373	Optical and electroemission properties of thin films of supermolecular anthracene-based rotaxanes Gadret G, Ruani G, Cavallini M, Biscarini F, Murgia M, Zamboni R, Giro G, Cocchi M, Fattori V, Loontjens T, Thies J, Leigh DA, Morales AF, Mahrt RF
374 - 378	In-situ monitoring of the growth of copper phthalocyanine films on InSb by organic molecular beam deposition Evans DA, Steiner HJ, Middleton R, Jones TS, Chen CH, Horn K, Park S, Kampen TU, Tenne D, Zahn DRT, Patchett A, McGovern IT
379 - 385	Experimental evidence and computational analysis of the electronic density modulation induced by gaseous molecules at Si(001) surfaces upon self-assembling organic monolayer Bollani M, Piagge R, Charai A, Narducci D
386 - 390	Ferroelectric behavior in solvent cast poly (vinylidene fluoride/hexafluoropropylene) copolymer films Jayasuriya AC, Scheinbeim JI
391 - 398	Contact resonance imaging - a simple approach to improve the resolution of AFM for biological and polymeric materials Wadu-Mesthrige K, Amro NA, Garno JC, Cruchon-Dupeyrat S, Liu GY
399 - 406	TOF-SIMS study of alkanethiol adsorption and ordering on gold Houssiau L, Bertrand P
407 - 411	Electronic structures of TPD/metal interfaces studied by photoemission and Kelvin probe method Ito E, Oji H, Hayashi N, Ishii H, Ouchi Y, Seki K
412 - 418	Photoemission study of energy alignment at the metal/Alq(3) interfaces Yan L, Mason MG, Tang CW, Gao YL
419 - 427	Key issues for the growth of high quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular beam epitaxy Brandt O, Muralidharan R, Thamm A, Waltereit P, Ploog KH
428 - 435	The electrical properties of MIS capacitors with ALN gate dielectrics Adam T, Kolodzey J, Swann CP, Tsao MW, Rabolt JF
436 - 441	Structure and optical properties of (001)GaAs surfaces nitrided in plasma-assisted NH3 gas Shimaoka G, Aoki T, Nakanishi Y, Hatanaka Y, Udagawa T
442 - 449	Low energy electron-excited nano-luminescence spectroscopy of GaN surfaces and interfaces Brillson LJ, Young AP, Jessen GH, Levin TM, Bradley ST, Goss SH, Bae J, Ponce FA, Murphy MJ, Schaff WJ, Eastman LF
450 - 455	Defect depth profiling using photoluminescence and cathodoluminescence spectroscopy: the role of oxygen on reactive ion beam etching of GaN in O-2/Ar plasmas Hsieh JT, Hwang JM, Hwang HL, Breitschadel O, Schweizer H
456 - 461	Characterization of the density, structure and chemical states of carbon nitride films Xu WT, Fujimoto T, Li BQ, Kojima I
462 - 467	Excimer laser doping techniques for II-VI semiconductors Hatanaka Y, Niraula M, Nakamura A, Aoki T
468 - 473	The electrical and optical properties of thin film diamond implanted with silicon Roe KJ, Kolodzey J, Swann CP, Tsao MW, Rabolt JF, Chen J, Brandes GR
474 - 479	Photoemission properties and surface structures of homoepitaxially grown CVD diamond(100) surfaces Murakami H, Yokoyama M, Lee SM, Ito T
480 - 483	Photo-, cathodo-, and electroluminescence studies of sputter deposited AlN : Er thin films Dimitrova VI, Van Patten PG, Richardson H, Kordesch ME
484 - 489	Low temperature deposition of SiC thin films on polymer surface by plasma CVD Anma H, Yoshimoto Y, Warashina M, Hatanaka Y
490 - 494	ScN/GaN heterojunctions: fabrication and characterization Perjeru F, Bai X, Ortiz-Libreros MI, Higgins R, Kordesch ME
495 - 498	Growth of high quality silicon carbide films on Si by triode plasma CVD using monomethylsilane Yasui K, Asada K, Maeda T, Akahane T
499 - 504	Structure and optical properties of ScN thin films Bai XW, Kordesch ME
505 - 511	The electrical characteristics of silicon carbide alloyed with germanium Katulka G, Roe K, Kolodzey J, Eldridge G, Clarke RC, Swann CP, Wilson RG
512 - 516	Investigation of metal contacts on ScN Ortiz-Libreros MI, Perjeru F, Bai X, Kordesch ME
517 - 524	Properties of thin MgO films grown on single-crystalline CVD diamond Lee SM, Murakami H, Ito T
525 - 530	Microstructural properties of amorphous carbon nitride films synthesised by dc magnetron sputtering Fitzgerald AG, Jiang LD, Rose MJ, Dines TJ
531 - 537	Auger electron spectroscopy, ellipsometry and photoluminescence investigations of Zn1-xBexSe alloys Bukaluk A, Wronkowska AA, Wronkowski A, Arwin H, Firszt F, Legowski S, Meczynska H
538 - 542	Screen printed CdSxTe1-x films, structural and optical characterization Santana-Aranda MA, Melendez-Lira M
543 - 548	Doping effects on optical properties of epitaxial ZnO layers determined by spectroscopic ellipsometry Postava K, Sueki H, Aoyama M, Yamaguchi T, Murakami K, Igasaki Y
549 - 554	XPS analysis of p-type Cu-doped CdS thin films Abe T, Kashiwaba Y, Baba M, Imai J, Sasaki H
555 - 561	Optical characterization of chalcogenide thin films Franta D, Ohlidal I, Frumar M, Jedelsky J
562 - 566	Photoluminescence in cubic and hexagonal CdS films Lozada-Morales R, Zelaya-Angel O, Torres-Delgado G
567 - 573	The depth of depletion layer and the height of energy barrier on ZnO under hydrogen Han CS, Jun J, Kim H
574 - 578	Conductimetry and impedance spectroscopy study of low pressure metal organic chemical vapor deposition TiNxOy films as a function of the growth temperature: a percolation approach Fabreguette F, Maglione M, Imhoff L, Domenichini B, de Lucas MCM, Sibillot P, Bourgeois S, Sacilotti M
579 - 584	Surface films on HgCdTe and CdTe etched in ferricyanide solution Erne BH, Lefevre F, Lorans D, Ballutaud D, Debiemme-Chouvy C, Vigneron J, Etcheberry A
585 - 590	Characterization of the surface layer of GaAs nitrided by high-density plasma Yasui K, Tsukada Y, Arayama T, Okutani S, Akahane T
591 - 596	Infrared study of carbon incorporation during chemical vapor deposition of SiC using methylsilanes Shinohara M, Kimura Y, Shoji D, Niwano M
597 - 605	Mesoscopic phenomena in nano-porous alumina films: single nano-tunnel junctions connected to Ni-nanowires and carbon nanotubes Haruyama J, Takesue I, Kato S, Takazawa K, Sato Y
606 - 612	Grazing incidence structural characterization of InAs quantum dots on GaAs(001) Zhang K, Heyn C, Hansen W, Schmidt T, Falta J
613 - 618	Quantum confinement effects in Si quantum well and dot structures fabricated from ultrathin Silicon-on-insulator wafers Tabe M, Kumezawa M, Ishikawa Y, Mizuno T
619 - 628	MBE growth of calcium and cadmium fluoride nanostructures on silicon Sokolov NS, Suturin SM
629 - 635	Raman scattering study of Ge dot superlattices Milekhin A, Stepina NP, Yakimov AI, Nikiforov AI, Schulze S, Zahn DRT
636 - 642	Nanofabrication using computer-assisted design and automated vector-scanning probe lithography Cruchon-Dupeyrat S, Porthun S, Liu GY
643 - 648	Growth of CdTe islands on ZnTe by hot-wall epitaxy Kuwabara H, Unno A, Kouga K, Watanabe T, Tomoda W, Nakanishi Y, Tatsuoka H
649 - 655	Characterization of AFM tips using nanografting Xu S, Amro NA, Liu GY
656 - 662	UHV aluminium oxide on silicon substrates: electron spectroscopies analysis and electrical measurements Gruzza B, Merle S, Bideux L, Robert C, Kover L, Toth J, Matolin V
663 - 669	Unoccupied states evolution with oxidation of ultrathin Mg, Zn and Cd layers on SrTiO3(100) surfaces Moller PJ, Komolov SA, Lazneva EF, Komolov AS
670 - 673	Absolute determination of the stoichiometry of ultra-thin oxide films as a function of thickness: antimony oxide on gold Stefanov KG, Narine SS, Slavin AJ
674 - 677	MoOx (x <= 2) ultrathin film growth from reactions between metallic molybdenum and TiO2 surfaces Blondeau-Patissier V, Domenichini B, Steinbrunn A, Bourgeois S
678 - 684	Approaching the limit for quantitative SIMS measurement of ultra-thin nitrided SiO2 films Novak SW, Bekos EJ, Marino JW
685 - 690	Structural and in depth characterization of newly designed conducting/insulating TiNxOy/TiO2 multilayers obtained by one step LP-MOCVD growth Fabreguette F, Imhoff L, Heintz O, Maglione M, Domenichini B, de Lucas MCM, Sibillot P, Bourgeois S, Sacilotti M
691 - 696	Rheed in-plane rocking curve analysis of biaxially-textured polycrystalline MgO films on amorphous substrates grown by ion beam-assisted deposition Brewer RT, Hartman JW, Groves JR, Arendt PN, Yashar PC, Atwater HA
697 - 702	Characterization of TiOx film prepared by plasma enhanced chemical vapor deposition using a multi-jet hollow cathode plasma source Nakamura M, Korzec D, Aoki T, Engemann J, Hatanaka Y
703 - 708	An improved three-dimensional model for growth of oxide films induced by laser heating Perez JLJ, Sakanaka PH, Algatti MA, Mendoza-Alvarez JG, Orea AC
709 - 714	One-dimensional analytical model for oxide thin film growth on Ti metal layers during laser heating in air Perez JLJ, Sakanaka PH, Algatti MA, Mendoza-Alvarez JG, Orea AC
715 - 720	Silicon oxide in Si-Si bonded wafers Himcinschi C, Milekhin A, Friedrich M, Hiller K, Wiemer M, Gessner T, Schulze S, Zahn DRT
721 - 725	Ga2O3 thin film for oxygen sensor at high temperature Ogita M, Higo K, Nakanishi Y, Hatanaka Y
726 - 733	Ultra-thin oxides grown on silicon (100) by rapid thermal oxidation for CMOS and advanced devices Mur P, Semeria MN, Olivier M, Papon AM, Leroux C, Reimbold G, Gentile P, Magnea N, Baron T, Clerc R, Ghibaudo G
734 - 739	Investigation of oxide growth and stability on n-GaAs and n-InP by coupling transient photocurrent and surface analysis Gerard I, Simon N, Etcheberry A
740 - 745	Impedance spectroscopic analysis of forward biased metal oxide semiconductor tunnel diodes (MOSTD) Matsumura M, Hirose Y
746 - 752	Development of a sub-picoampere scanning tunneling microscope for oxide surfaces Umbach CC, Blakely JM
753 - 758	Amorphous silicon crystallization and polysilicon thin film transistors on SiO2 passivated steel foil substrates Wu M, Wagner S
759 - 763	Composition-related effects of microstructure on the ferroelectric behavior of SBT thin films Tejedor P, Ocal C, Barrena E, Jimenez R, Alemany C, Mendiola J
764 - 768	Combined photoelectron and metastable atom electron spectroscopy study of n-doped oligophenylene thin films Koch N, Oji H, Ito E, Zojer E, Ishii H, Leising G, Seki K
769 - 776	On the origin of resonance features in reflectance difference data of silicon Hingerl K, Balderas-Navarro RE, Bonanni A, Tichopadek P, Schmidt WG
777 - 782	Sum rules in surface differential reflectivity and reflectance anisotropy spectroscopies Chiarotti G, Chiaradia P, Arciprete F, Goletti C
783 - 789	Chemical mapping of patterned polymer photoresists by near-field infrared microscopy Dragnea B, Preusser J, Szarko JM, McDonough LA, Leone SR, Hinsberg WD
790 - 796	Auger electron spectroscopy investigations of the effect of degradation of depth resolution and its influence on the interdiffusion data in thin film Au/Ag, Cu/Ag, Pd/Au and Pd/Cu multilayer structures Bukaluk A
797 - 801	Oxygen adsorption on a Fe/MgO(100) film: a surface magnetism investigation Moroni R, Bisio F, Canepa M, Mattera L