Applied Surface Science

Applied Surface Science, Vol.291 Entire volume, number list

ISSN: 0169-4332 (Print)

In this Issue (25 articles)

1 - 2	Special Issue: The route to post-Si CMOS devices: From high mobility channels to graphene-like 2D nanosheets Preface Molle A, Dimoulas A, Le Lay G, Lemme M
3 - 5	Electrically detected magnetic resonance study of the Ge dangling bonds at the Ge(111)/GeO2 interface after capping with Al2O3 layer Paleari S, Molle A, Accetta F, Lamperti A, Cianci E, Fanciulli M
6 - 10	The O-As defect in GaAs: A hybrid density functional study Colleoni D, Pasquarello A
11 - 15	Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/GexSi1-x/SiO2/(100) Si structures with nm-thin GexSi1-x layers Madia O, Nguyen APD, Thoan NH, Afanas'ev V, Stesmans A, Souriau L, Slotte J, Tuomisto F
16 - 19	Defect levels at GaAs/Al2O3 interfaces: As-As dimer vs. Ga dangling bond Miceli G, Pasquarello A
20 - 24	Comparative analysis of thermally induced degradation of condensation-grown (100)Ge0.75Si0.25/SiO2 interfaces by electron spin resonance Kepa J, Stesmans A, Afanas'ev VV
25 - 30	Study of the energy distribution of the interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics Baert B, Schmeits M, Nguyen ND
31 - 34	Electrical properties of magnesium oxide layers with different surface pretreatment on high mobility Ge1-xSnx and Ge MOS capacitors Su CY, Lieten R, Bakalov P, Tseng WJ, Dillemans L, Menghini M, Smets T, Seo JW, Locquet JP
35 - 39	Impact of Gd2O3 passivation layer on interfacial and electrical properties of atomic-layer-deposited ZrO2 gate dielectric on GaAs Gong YP, Zhai HF, Liu XJ, Kong JZ, Wu D, Li AD
40 - 44	Effect of growth temperature and GaAs substrate misorientation on the morphology of InAsBi nanoislands grown by metalorganic vapor phase epitaxy Boussaha R, Fitouri H, Rebey A, El Jani B
45 - 47	Mobility enhancement in tensile-strained Ge grown on InAlP metamorphic templates Wang K, Gong Q, Zhou HF, Kang CZ, Yan JY, Liu QB, Wang SM
48 - 52	Graphene nanoribbons with zigzag and armchair edges prepared by scanning tunneling microscope lithography on gold substrates Nemes-Incze P, Tapaszto L, Magda GZ, Osvath Z, Dobrik G, Jin X, Hwang C, Biro LP
53 - 57	Electronic properties of epitaxial graphene residing on SiC facets probed by conductive atomic force microscopy Giannazzo F, Deretzis I, Nicotra G, Fisichella G, Spinella C, Roccaforte F, La Magna A
58 - 63	Effect of the disorder in graphene grain boundaries: A wave packet dynamics study Vancso P, Mark GI, Lambin P, Mayer A, Hwang C, Biro LP
64 - 68	Intercalation of H at the graphene/SiC(0001) interface: Structure and stability from first principles Sclauzero G, Pasquarello A
69 - 73	Structural and electronic inhomogeneity for graphene grown on the C-face of SiC: Insights from ab initio calculations Deretzis I, La Magna A
74 - 77	Secondary electron emission under electron bombardment from graphene nanoplatelets Montero I, Aguilera L, Davila ME, Nistor VC, Gonzalez LA, Galan L, Raboso D, Ferritto R
78 - 82	A facile way to deposit conformal Al2O3 thin film on pristine graphene by atomic layer deposition Cao YQ, Cao ZY, Li X, Wu D, Li AD
83 - 86	Insitu CCVD grown bilayer graphene transistors for applications in nanoelectronics Wessely PJ, Schwalke U
87 - 92	Electrical gating and rectification in graphene three-terminal junctions Handel B, Hahnlein B, Gockeritz R, Schwierz F, Pezoldt J
93 - 97	Silicene on metal substrates: A first-principles study on the emergence of a hierarchy of honeycomb structures Kaltsas D, Tsetseris L, Dimoulas A
98 - 103	Theoretical aspects of graphene-like group IV semiconductors Houssa M, van den Broek B, Scalise E, Ealet B, Pourtois G, Chiappe D, Cinquanta E, Grazianetti C, Fanciulli M, Molle A, Afanas'ev VV, Stesmans A
104 - 108	First-principles electronic functionalization of silicene and germanene by adatom chemisorption van den Broek B, Houssa M, Scalise E, Pourtois G, Afanas'ev VV, Stesmans A
109 - 112	Exploring the morphological and electronic properties of silicene superstructures Grazianetti C, Chiappe D, Cinquanta E, Tallarida G, Fanciulli M, Molle A
113 - 117	Vibrational properties of epitaxial silicene layers on (111) Ag Scalise E, Cinquanta E, Houssa M, van den Broek B, Chiappe D, Grazianetti C, Pourtois G, Ealet B, Molle A, Fanciulli M, Afanas'ev VV, Stesmans A