1 - 2 |
Progress in Applied Surface, Interface and Thin Film Science 2015 Solar Renewable Energy News IV, November 23-26, 2015, Florence, Italy (SURFINT-SREN IV) [Anonymous] |
3 - 8 |
Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers Zhuravlev AG, Alperovich VL |
9 - 15 |
Effect of ion irradiation on surface morphology and superconductivity of BaFe2(As1-xPx)(2) films Daghero D, Tortello M, Gozzelino L, Gonnelli RS, Hatano T, Kawaguchi T, Ikuta H |
16 - 23 |
X-ray diffraction analysis of residual stresses in textured ZnO thin films Dobrocka E, Novak P, Buc D, Harmatha L, Murin J |
24 - 28 |
Probing the structure of CuInS2-ZnS core-shell and similar nanocrystals by Raman spectroscopy Dzhagan V, Kempken B, Valakh M, Parisi J, Kolny-Olesiak J, Zahn DRT |
29 - 36 |
Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires Frigeri C, Scarpellini D, Fedorov A, Bietti S, Somaschini C, Grillo V, Esposito L, Salvalaglio M, Marzegalli A, Montalenti F, Sanguinetti S |
37 - 41 |
Carrier mobility and scattering lifetime in electric double-layer gated few-layer graphene Piatti E, Galasso S, Tortello M, Nair JR, Gerbaldi C, Bruna M, Borini S, Daghero D, Gonnelli RS |
42 - 49 |
Low energy electron beam processing of YBCO thin films Chromik S, Camerlingo C, Sojkova M, Strbik V, Talacko M, Malka I, Bar I, Bareli G, Jung G |
50 - 55 |
Light trapping of crystalline Si solar cells by use of nanocrystalline Si layer plus pyramidal texture Imamura K, Nonaka T, Onitsuka Y, Irishika D, Kobayashi H |
56 - 60 |
Ultrathin SiO2 layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO2/Si interface for crystalline Si solar cells Matsumoto T, Nakajima H, Irishika D, Nonaka T, Imamura K, Kobayashi H |
61 - 65 |
Surface chemistry of a hydrogenated mesoporous p-type silicon Media EM, Outemzabet R |
66 - 71 |
Radiation hardness of GaAs sensors against gamma-rays, neutrons and electrons Sagatova A, Zat'koc B, Dubecky F, Anh TL, Necas V, Sedlaova K, Pavlovic M, Fulop M |
72 - 77 |
Influence of substrate bias voltage on the properties of TiO2 deposited by radio-frequency magnetron sputtering on 304L for biomaterials applications Bait L, Azzouz L, Madaoui N, Saoula N |
78 - 85 |
Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities Stegemann B, Gad KM, Balamou P, Sixtensson D, Vossing D, Kasemann M, Angermann H |
86 - 91 |
Relation between secondary doping and phase separation in PEDOT:PSS films Donoval M, Micjan M, Novota M, Nevrela J, Kovacova S, Pavuk M, Juhasz P, Jagelka M, Kovac J, Jakabovic J, Cigan M, Weis M |
92 - 97 |
Stability of AlGaN/GaN heterostructures after hydrogen plasma treatment Babchenko O, Dzuba J, Lalinsky T, Vojs M, Vincze M, Izak T, Vanko G |
98 - 104 |
Structural characterization of InAlAsSb/InGaAs/InP heterostructures for solar cells Balades N, Herrera M, Sales DL, Delgado FJ, Hernandez-Maldonado D, Ramasse QM, Pizarro J, Galindo P, Gonzalez M, Abell J, Tomasulo S, Walters JR, Molina SI |
105 - 109 |
Effect of annealing on the compositional modulation of InAlAsSb Balades N, Sales DL, Herrera M, Delgado FJ, Gonzalez M, Clark K, Pinsunkajana P, Hoven N, Hubbard S, Tomasulo S, Walters JR, Molina SI |
110 - 116 |
Optical, structural and photocatalysis properties of Cu-doped TiO2 thin films Bensouici F, Bououdina M, Dakhel AA, Tala-Ighil R, Tounanea M, Iratni A, Souier T, Liu S, Cai W |
117 - 121 |
Residual stress, mechanical and microstructure properties of multilayer Mo2N/CrN coating produced by R.F Magnetron discharge Bouaouina B, Besnard A, Abaidia SE, Haid F |
122 - 130 |
Simulation of real I-V characteristics of metal/GaN/AlGaN heterostructure based on the 12-EXT model of trap-assisted tunnelling Racko J, Benko P, Mikolasek M, Granzner R, Kittler M, Schwierz F, Harmatha L, Breza J |
131 - 135 |
A comparative study of Mg and Pt contacts on semi-insulating GaAs: Electrical and XPS characterization Dubecky F, Kindl D, Hubik P, Micusik M, Dubecky M, Bohacek P, Vanko G, Gombia E, Necas V, Mudron J |
136 - 139 |
Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots Fernandez-Delgado N, Herrera M, Chisholm MF, Kamarudin MA, Zhuang QD, Hayne M, Molina SI |
140 - 144 |
Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment Gregusova D, Gucmann F, Kudela R, Micusik M, Stoklas R, Valik L, Gregus J, Blaho M, Kordos P |
145 - 149 |
Photonic devices prepared by embossing in PDMS Jandura D, Pudis D, Berezina S |
150 - 156 |
Multifractal analysis and optical properties of nanostructured silicon layers Jurecka S, Matsumoto T, Imamura K, Kobayashi H |
157 - 161 |
Field emission from the surface of highly ordered pyrolytic graphite Knapek A, Sobol D, Tomanek P, Pokorna Z, Urbanek M |
162 - 165 |
Formation of a compact Ga-doped ZnO layer over vertical free-standing GaP nanowires Laurencikova A, Novotny I, Hasenohrl S, Derer J, Elias P, Kovac J, Kovac J, Dobrocka E, Novak J |
166 - 171 |
Analysis of low temperature output parameters for investigation of silicon heterojunction solar cells Mikolasek M, Racko J, Harmatha L |
172 - 179 |
Properties of TiO2 thin films deposited by rf reactive magnetron sputtering on biased substrates Nezar S, Saoula N, Sali S, Faiz M, Mekki M, Laoufi NA, Tabet N |
180 - 184 |
Optical and mechanical properties of a compact ZnO layer with embedded GaP nanowires Novak J, Laurencikova A, Hasenohrl S, Elias P, Novotny I, Kovac J, Valentin M, Kovac J, Durisova J, Pudis D |
185 - 194 |
About the optical properties of oxidized black silicon structures Pincik E, Brunner R, Kobayashi H, Mikula M, Kucera M, Svec P, Gregus J, Vojtek P, Zabudla Z, Imamura K, Zahoran M |
195 - 199 |
Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon Pinero JC, Araujo D, Pastore CE, Gutierrez M, Frigeri C, Benali A, Lelievre JF, Gendry M |
200 - 207 |
Atomic composition of WC/ and Zr/O-terminated diamond Schottky interfaces close to ideality Pinero JC, Araujo D, Fiori A, Traore A, Villar MP, Eon D, Muret P, Pernot J, Teraji T |
208 - 213 |
Structural, optical and electrical properties of sputtered NiO thin films for gas detection Predanocy M, Hotovy I, Caplovicova M |
214 - 219 |
Influence of non-adherent yeast cells on electrical characteristics of diamond-based field-effect transistors Prochazka V, Cifra M, Kulha P, Izak T, Rezek B, Kromka A |
220 - 225 |
Photonic crystal and photonic quasicrystal patterned in PDMS surfaces and their effect on LED radiation properties Suslik L, Pudis D, Goraus M, Nolte R, Kovac J, Durisova J, Gaso P, Hronec P, Schaaf P |
226 - 231 |
Investigation of the AZ 5214E photoresist by the laser interference, EBDW and NSOM lithographies Skriniarova J, Pudis D, Andok R, Lettrichova I, Uherek F |
232 - 236 |
Influence of GaN/AlGaN/GaN (0001) and Si (100) substrates on structural properties of extremely thin MoS2 films grown by pulsed laser deposition Chromik S, Sojkova M, Vretenar V, Rosova A, Dobrocka E, Hulman M |
237 - 240 |
Superconductor-ferromagnet-superconductor nanojunctions from perovskite materials Strbik V, Benacka S, Gazi S, Spankova M, Smatko V, Knoska J, Gal N, Chromik S, Sojkova M, Pisarcik M |
241 - 247 |
Plasmonic behaviour of sputtered Au nanoisland arrays Tvarozek V, Szabo O, Novotny I, Kovacova S, Skriniarova J, Sutta P |