1 - 11 |
Structure and catalytic properties of Pt-Ir catalysts as a function of different substrate Zecua-Fernandez A, Gomez-Cortes A, Cordero-Borboa AE, Vazquez-Zavala A |
12 - 19 |
Field emission spectroscopy from field-enhanced diffusion-growth nano-tips Nagaoka K, Fujii H, Matsuda K, Komaki M, Murata Y, Oshima C, Sakurai T |
20 - 24 |
Appraisal of the length of heterogeneous chains in the low-temperature oxidation reaction of aldehydes Bakhtchadjyan RH |
25 - 31 |
K-promoted oxidation of GaSb (110): the effects of potassium coverage and substrate temperature Ji MR, Yang HW, Wu J, Ma MS, Zhu JS, Zhang YH |
32 - 39 |
Influence of deposition pressure on the composition and structure of carbon nitride films deposited by direct current plasma assisted pulsed laser ablation Cheng YH, Sun ZH, Tay BK, Lau SP, Qiao XL, Chen JG, Wu YP, Xie CS, Wang YQ, Xu DS, Mo SB, Sun YB |
40 - 48 |
Influence of tip size on AFM roughness measurements Sedin DL, Rowlen KL |
49 - 54 |
Kinetic studies of BTEX vapour adsorption onto surfaces of calix-4-resorcinarene films Hassan AK, Ray AK, Nabok AV, Wilkop T |
55 - 63 |
Measurement of positronium emission energy from the surface of a semiconductor Mondal NN |
64 - 68 |
Nanometer-scale recording with transition time at nanosecond Shi DX, Ba DC, Pang SJ, Gao HJ |
69 - 76 |
Dependence of the structural, the electrical, and the optical properties on the Ar/O-2 flow-rate ratios for SnO2 thin films grown on p-InP (100) substrates at low temperature Kim TW, Lee DU, Jung M, Lee JH, Choo DC, Cho JW, Seo KY, Yoon YS |
77 - 90 |
The general mathematical model of CO oxidation reaction over Pd-zeolite catalyst Kurkina ES, Tolstunova ED |
91 - 102 |
Wavelength dependant ablation rates for metals and silicate glasses using homogenized laser beam profiles - implications for LA-ICP-MS Horn I, Guillong M, Gunther D |
103 - 114 |
A comparative study of the electronic structure of H pairs near a/2[1 (1)over-bar1] and a[010] dislocations in bcc Fe Juan A, Gesari S, Brizuela G, Pronsato ME |
115 - 132 |
Adsorption stage of the Eu-Si(111) interface formation Krachino TV, Kuz'min MV, Loginov MV, Mittsev MA |
133 - 141 |
Effect of argon etching on alumina surfaces and on Pt/alumina interfaces Jonnard P, Kayser P |
142 - 149 |
Electron emission from arc-modified diamond-like carbon films at low electric field Tharigen T, Hartmann E, Lenk M, Mende A, Otte K, Lorenz M, Hallmeier KH |
150 - 158 |
Highly c-axis oriented LiNb0.5Ta0.5O3 thin films on Si substrates fabricated by thermal plasma spray CVD Kulinich SA, Shibata J, Yamamoto H, Shimada Y, Terashima K, Yoshida T |
159 - 166 |
Variation of band gap energy and photoluminescence characteristics with Te composition of ZnS1-xTex epilayers grown by hot-wall epitaxy Yu YM, Nam S, O B, Lee KS, Choi YD, Lee J, Yu PY |