Applied Surface Science

Applied Surface Science, Vol.185, No.1-2 Entire volume, number list

ISSN: 0169-4332 (Print)

In this Issue (19 articles)

1 - 10	Effect of composition on the electrical and structural properties of As-Te-Ga thin films Dongol M, Hafiz MM, Abou-Zied M, Elhady AF
11 - 26	Determination of lattice site locations of erbium ions implanted into LiNbO3 single crystals after annealing at moderate and high temperature Mignotte C
27 - 33	Dry etch chemistries for TiO2 thin films Norasetthekul S, Park PY, Baik KH, Lee KP, Shin JH, Jeong BS, Shishodia V, Lambers ES, Norton DP, Pearton SJ
34 - 43	Characterization and tribological investigation of SiO2 and La2O3 sol-gel films Zhang WG, Liu WM, Wang CT
44 - 46	Reply from authors to the comments raised by Rosei and Fontana on the paper "Surface morphology and electronic structure of Ge/Si (111) 7 x 7 system" [Appl. Surf. Sci. 173 (2001) 270] Lobo A, Gokhale S, Kulkarni SK
47 - 51	In situ RHEED monitor of the growth of epitaxial anatase TiO2 thin films Ong CK, Wang SJ
52 - 59	Wet and dry etching of Sc2O3 Park PY, Norasetthekul S, Lee KP, Baik KH, Gila BP, Shin JH, Abernathy CR, Ren F, Lambers ES, Pearton SJ
60 - 65	Evolution of Fe-rich precipitates in Fe implanted Ge(110) surfaces as observed by scanning Auger microscopy Venugopal R, Sundaravel B, Wilson IH
66 - 71	Adsorption kinetics of the Cs-O activation layer on GaAs (100) Kamaratos M
72 - 78	Characterization of K2CO3/Co-MoS2 catalyst by XRD, XPS, SEM, and EDS Iranmahboob J, Hill DO, Toghiani H
79 - 83	Scaling behavior of polished (110) single-crystal nickel surfaces Saitou M, Hokama M, Oshikawa W
84 - 91	Effects of surface roughness on surface analysis via soft and ultrasoft X-ray fluorescence spectroscopy Kuhn WK, Andermann G
92 - 98	Spatial alignment evolution of self-assembled In0.4Ga0.6As island arrays grown on GaAs (311)B surface by atomic hydrogen-assisted molecular beam epitaxy Xu HZ, Akahane K, Song HZ, Okada Y, Kawabe M
99 - 107	Fractal geometry and mercury porosimetry - Comparison and application of proposed models on building stones Bernal JLP, Bello MA
108 - 113	Method of porous diamond deposition on porous silicon Baranauskas V, Peterlevitz AC, Chang DC, Durrant SF
114 - 122	In situ diagnosis of pulsed UV laser surface ablation of tungsten carbide hardmetal by using laser-induced optical emission spectroscopy Li TJ, Lou QH, Wei YR, Huang F, Dong JX, Liu JR
123 - 133	Correlation between processing and properties of TiOxNy thin films sputter deposited by the reactive gas pulsing technique Martin N, Banakh O, Santo AME, Springer S, Sanjines R, Takadoum J, Levy F
134 - 139	Stress and morphological development of US and ZnS thin films during the SILAR growth on (100)GaAs Laukaitis G, Lindroos S, Tamulevicius S, Leskela M
140 - 146	Annihilation kinetics of defects induced by phosphorus ion implantation in silicon Hadjersi T