화학공학소재연구정보센터

Applied Surface Science

Applied Surface Science, Vol.192, No.1-4 Entire volume, number list
ISSN: 0169-4332 (Print) 

In this Issue (18 articles)

1 - 25 Kinetic phenomena in electron transport in radio-frequency fields
Petrovic ZL, Raspopovic ZM, Dujko S, Makabe T
26 - 49 Development of swarm transport theory in radio-frequency electric and crossed electric and magnetic fields
White RD, Ness KF, Robson RE
50 - 71 Temporal and spatial relaxation of electrons in low temperature plasmas
Winkler R, Loffhagen D, Sigeneger F
72 - 87 Surface chemistry associated with plasma etching processes
Graves DB, Humbird D
88 - 114 Development of optical computerized tomography in capacitively coupled plasmas and inductively coupled plasmas for plasma etching
Makabe T, Petrovic ZL
IX - IX This special issue resulted from the International Workshop on Basis of Low Temperature Plasma Applications which was held at Hakone in Japan on July 24-25, 2001 - Preface
Makabe T
115 - 134 Negative ions in processing plasmas and their effect on the plasma structure
Kono A
135 - 160 Measurement techniques of radicals, their gas phase and surface reactions in reactive plasma processing
Hori M, Goto T
161 - 175 Spatially resolved CF, CF2, SiF and SiF2 densities in fluorocarbon containing inductively driven discharges
Hebner GA
176 - 200 Vertically integrated computer-aided design for device processing
Makabe T, Maeshige K
201 - 215 Application and simulation of low temperature plasma processes in semiconductor manufacturing
Ventzek PLG, Rauf S, Stout PJ, Zhang D, Dauksher W, Hall E
216 - 243 Development of high-density plasma reactor for high-performance processing and future prospects
Samukawa S
244 - 257 Recent progress in the understanding of electron kinetics in low-pressure inductive plasmas
Kortshagen U, Maresca A, Orlov K, Heil B
258 - 269 Modeling of magnetron sputtering plasmas
Shon CH, Lee JK
270 - 298 Dielectric film etching in semiconductor device manufacturing -Development of SiO2 etching and the next generation plasma reactor
Sekine M
299 - 308 Efficiency of AC plasma display panels from diagnostics and models
Ganter R, Callegari T, Pitchford LC, Boeuf JP
309 - 326 Electron interactions with plasma processing gases: present status and future needs
Christophorou LG, Olthoff JK
327 - 338 Database in low temperature plasma modeling
Sakai Y