화학공학소재연구정보센터

Applied Surface Science

Applied Surface Science, Vol.256, No.19 Entire volume, number list
ISSN: 0169-4332 (Print) 

In this Issue (15 articles)

5697 - 5697 PROCEEDINGS of the 6th International Workshop on Semiconductor Surface Passivation SSP 2009 Zakopane, Poland 13-18 September 2009 Preface
Szuber J
5698 - 5707 Surface passivation of III-V semiconductors for future CMOS devices-Past research, present status and key issues for future
Hasegawa H, Akazawa M, Domanowska A, Adamowicz B
5708 - 5713 High-k Al2O3 MOS structures with Si interface control layer formed on air-exposed GaAs and InGaAs wafers
Akazawa M, Hasegawa H
5714 - 5721 Molecular self-assembly and passivation of GaAs (001) with alkanethiol monolayers: A view towards bio-functionalization
Dubowski JJ, Voznyy O, Marshall GM
5722 - 5726 Composition and morphology of fluorinated anodic oxides on InAs (111)A surface
Valisheva NA, Tereshchenko OE, Prosvirin IP, Levtsova TA, Rodjakina EE, Kovchavcev AV
5727 - 5735 Surface and interface issues in wide band gap semiconductor electronics
Roccaforte F, Giannazzo F, Iucolano F, Eriksson J, Weng MH, Raineri V
5736 - 5739 Surface defects in semiconductor lasers studied with cross-sectional scanning tunneling microscopy
Cobley RJ, Teng KS, Brown MR, Rees P, Wilks SP
5740 - 5743 GaN/LiNbO3 (0001) interface formation calculated from first-principles
Sanna S, Schmidt WG
5744 - 5756 Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO2/Si and SiO2/SiC structures
Kobayashi H, Imamura K, Kim WB, Im SS, Asuha
5757 - 5764 On ultra-thin oxide/Si and very-thin oxide/Si structures prepared by wet chemical process
Pincik E, Kobayashi H, Rusnak J, Kim WB, Brunner R, Malinovsky L, Matsumoto T, Imamura K, Jergel M, Takahashi M, Higashi Y, Kucera M, Mikula M
5765 - 5770 Effect of deuterium on passivation of Si surfaces
Mizsei J, Pap AE, Gillemot K, Battistig G
5771 - 5775 Influence of Si substrate preparation on surface chemistry and morphology of L-CVD SnO2 thin films studied by XPS and AFM
Kwoka M, Ottaviano L, Waczynska N, Santucci S, Szuber J
5776 - 5782 Structural, electronic, and magnetic properties of pristine and oxygen-adsorbed graphene nanoribbons
Miwa RH, Veiga RGA, Srivastava GP
5783 - 5788 Structural and electronic properties of H-passivated graphene
AlZahrani AZ, Srivastava GP
5789 - 5795 Molecular gated transistors: Role of self-assembled monolayers
Shaya O, Halpern E, Khamaisi B, Shaked M, Usherenko Y, Shalev G, Doron A, Levy I, Rosenwaks Y