5697 - 5697 |
PROCEEDINGS of the 6th International Workshop on Semiconductor Surface Passivation SSP 2009 Zakopane, Poland 13-18 September 2009 Preface Szuber J |
5698 - 5707 |
Surface passivation of III-V semiconductors for future CMOS devices-Past research, present status and key issues for future Hasegawa H, Akazawa M, Domanowska A, Adamowicz B |
5708 - 5713 |
High-k Al2O3 MOS structures with Si interface control layer formed on air-exposed GaAs and InGaAs wafers Akazawa M, Hasegawa H |
5714 - 5721 |
Molecular self-assembly and passivation of GaAs (001) with alkanethiol monolayers: A view towards bio-functionalization Dubowski JJ, Voznyy O, Marshall GM |
5722 - 5726 |
Composition and morphology of fluorinated anodic oxides on InAs (111)A surface Valisheva NA, Tereshchenko OE, Prosvirin IP, Levtsova TA, Rodjakina EE, Kovchavcev AV |
5727 - 5735 |
Surface and interface issues in wide band gap semiconductor electronics Roccaforte F, Giannazzo F, Iucolano F, Eriksson J, Weng MH, Raineri V |
5736 - 5739 |
Surface defects in semiconductor lasers studied with cross-sectional scanning tunneling microscopy Cobley RJ, Teng KS, Brown MR, Rees P, Wilks SP |
5740 - 5743 |
GaN/LiNbO3 (0001) interface formation calculated from first-principles Sanna S, Schmidt WG |
5744 - 5756 |
Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO2/Si and SiO2/SiC structures Kobayashi H, Imamura K, Kim WB, Im SS, Asuha |
5757 - 5764 |
On ultra-thin oxide/Si and very-thin oxide/Si structures prepared by wet chemical process Pincik E, Kobayashi H, Rusnak J, Kim WB, Brunner R, Malinovsky L, Matsumoto T, Imamura K, Jergel M, Takahashi M, Higashi Y, Kucera M, Mikula M |
5765 - 5770 |
Effect of deuterium on passivation of Si surfaces Mizsei J, Pap AE, Gillemot K, Battistig G |
5771 - 5775 |
Influence of Si substrate preparation on surface chemistry and morphology of L-CVD SnO2 thin films studied by XPS and AFM Kwoka M, Ottaviano L, Waczynska N, Santucci S, Szuber J |
5776 - 5782 |
Structural, electronic, and magnetic properties of pristine and oxygen-adsorbed graphene nanoribbons Miwa RH, Veiga RGA, Srivastava GP |
5783 - 5788 |
Structural and electronic properties of H-passivated graphene AlZahrani AZ, Srivastava GP |
5789 - 5795 |
Molecular gated transistors: Role of self-assembled monolayers Shaya O, Halpern E, Khamaisi B, Shaked M, Usherenko Y, Shalev G, Doron A, Levy I, Rosenwaks Y |