Applied Surface Science

Applied Surface Science, Vol.252, No.21 Entire volume, number list

ISSN: 0169-4332 (Print)

In this Issue (23 articles)

7599 - 7599	Proceedings of the 4th International Workshop on Semiconductor Surface Passivation SSP'05 - Ustron, Poland, September 10-13, 2005 - Preface Szuber J
7600 - 7607	The electron counting rule and passivation of compound semiconductor surfaces Srivastava GP
7608 - 7613	Computing surface dipoles and potentials of self-assembled monolayers from first principles Natan A, Kronik L, Shapira Y
7614 - 7623	Surface structure investigations using noncontact atomic force microscopy Kolodziej JJ, Such B, Goryl M, Krok F, Piatkowski P, Szymonski M
7624 - 7630	Rare-earth gate oxides for GaAs MOSFET application Kwon KH, Yang JK, Park HH, Kim J, Roh TM
7631 - 7635	Charge transient spectroscopy measurements of GaAs metal-insulator-semiconductor structures Kochowski S, Szydlowski M, Thurzo I, Zahn DRT
7636 - 7641	Probing electrical properties of molecule-controlled or plasma-nitrided GaAs surfaces: Two different tools for modifying the electrical characteristics of metal/GaAs diodes Ambrico M, Losurdo M, Capezzuto P, Bruno G, Ligonzo T, Haick H
7642 - 7646	Micro-Raman spectroscopy of disordered and ordered sulfur phases on a passivated GaAs surface Blachowicz T, Salvan G, Zahn DRT, Szuber J
7647 - 7658	Comparative study of the GaAs(100) surface cleaned by atomic hydrogen Tomkiewicz P, Winkler A, Szuber J
7659 - 7663	XPS analysis of surface chemistry of near surface region of epiready GaAs(100) surface treated with (NH4)(2)S-x solution Arabasz S, Bergignat E, Hollinger G, Szuber J
7664 - 7670	Passivation of InP-based HBTs Jin Z, Uchida K, Nozaki S, Prost W, Tegude FJ
7671 - 7677	GaN nucleation on (0001)-sapphire via ion-induced nitridation of gallium Sidorenko A, Peisert H, Neumann H, Chasse T
7678 - 7683	Atomic geometry, electronic states and possible hydrogen passivation of the InP(111)A surface Chuasiripattana K, Srivastava GP
7684 - 7690	Structure and composition of chemically prepared and vacuum annealed InSb(001) surfaces Tereshchenko OE
7691 - 7699	Silicon surface passivation by static charge Mizsei J
7700 - 7712	Method of observation of low density interface states by means of X-ray photoelectron spectroscopy under bias and passivation by cyanide ions Kobayashi H, Sakurai T, Yamashita Y, Kubota T, Maida O, Takahashi M
7713 - 7721	Passivation of Si and a-Si : H surfaces by thin oxide and oxy-nitride layers Pincik E, Kobayashi H, Rusnak J, Takahashi M, Brunner R, Jergel M, Morales-Acevedo A, Ortega L, Kakos J
7722 - 7725	On a presence of SimHn clusters in a-Si : H/c-Si structures Kopani M, Pincik E, Kobayashi H, Takahashi M, Fujiwara N, Brunner R, Jergel M, Ortega L
7726 - 7729	The intrinsic lifetime of low-frequency zone-centre phonon modes in silicon nanowires and carbon nanotubes Hepplestone SP, Srivastava GP
7730 - 7733	XPS depth profiling studies of L-CVD SnO2 thin films Kwoka M, Ottaviano L, Passacantando M, Santucci S, Szuber J
7734 - 7738	Comparative photoemission study of the electronic properties of L-CVD SnO2 thin films Kwoka M, Ottaviano L, Passacantando M, Czempik G, Santucci S, Szuber J
7739 - 7742	Formation of photoresist-free patterned ZnO film containing nano-sized Ag by photochemical solution deposition Hong CS, Park HH, Wang SJ, Moon J, Park HH, Hill RH
7743 - 7747	Differences between surface and bulk refractive indices of a-InxSe1-x Michalewicz A, Nowak M, Kepinska M