Applied Surface Science

Applied Surface Science, Vol.258, No.21 Entire volume, number list

ISSN: 0169-4332 (Print)

In this Issue (18 articles)

8323 - 8323	VII International Workshop on Semiconductor Surface Passivation, KRAKOW, POLAND, September 11-15, 2011 Preface Szuber J
8324 - 8333	Critical issues for interfaces to p-type SiC and GaN in power devices Roccaforte F, Frazzetto A, Greco G, Giannazzo F, Fiorenza P, Lo Nigro R, Saggio M, Leszczynski M, Pristawko P, Raineri V
8334 - 8337	S-termination effects for the catalytic activities of Pd on GaN(0001) surfaces Konishi T, Ueta Y, Hirayama M, Nishiwaki N, Tsukamoto S
8338 - 8342	Ab initio studies of electronic and optical properties of graphene and graphene-BN interface Yelgel C, Srivastava GP
8343 - 8348	Electrical characterization of surface and interface potentials on SiC Mizsei J, Czett A
8349 - 8353	Growth of thin zirconium oxide films on the 6H-SiC(0001) surface Idczak K, Mazur P, Markowski L, Skiscim M, Musial M
8354 - 8359	Surface photovoltage and Auger electron spectromicroscopy studies of HfO2/SiO2/4H-SiC and HfO2/Al2O3/4H-SiC structures Domanowska A, Miczek M, Ucka R, Matys M, Adamowicz B, Zywicki J, Taube A, Korwin-Mikke K, Gieraltowska S, Sochacki M
8360 - 8365	Ab-initio modeling of oxygen on the surface passivation of 3C-SiC nanostructures Cuevas JL, Trejo A, Calvino M, Carvajal E, Cruz-Irisson M
8366 - 8370	Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices Mroczynski R, Taube A, Gieraltowska S, Guziewicz E, Godlewski M
8371 - 8376	High-temperature stability of c-Si surface passivation by thick PECVD Al2O3 with and without hydrogenated capping layers Saint-Cast P, Kania D, Heller R, Kuehnhold S, Hofmann M, Rentsch J, Preu R
8377 - 8386	Theoretical analysis of semiconductor surface passivation by adsorption of alkaline-earth metals and chalcogens Srivastava GP, AlZahrani AZ, Usanmaz D
8387 - 8396	Electronic interface properties of silicon substrates after ozone based wet-chemical oxidation studied by SPV measurements Angermann H, Wolke K, Gottschalk C, Moldovan A, Roczen M, Fittkau J, Zimmer M, Rentsch J
8397 - 8405	Passivation of Si-based structures in HCN and KCN solutions Pincik E, Kobayashi H, Rusnak J, Takahashi M, Mikula M, Kim WB, Kucera M, Brunner R, Jurecka S
8406 - 8408	The effect of KCN passivation on IR spectra of a-Si based structures Kopani M, Mikula M, Fujiwara N, Takahashi M, Pincik E
8409 - 8414	Properties of charge states in MOS structure with ultrathin oxide layer Jurecka S, Kobayashi H, Takahashi M, Matsumoto T, Pincik E
8415 - 8418	Surface passivation function of indium-tin-oxide-based nanorod structural sensors Lin TS, Lee CT, Lee HY, Lin CC
8419 - 8424	The effect of Si substrate preparation on surface morphology and surface composition of In2O3 ultrathin films deposited by rheotaxial growth and vacuum oxidation Koscielniak P, Sitarz M, Maciak E, Szuber J
8425 - 8429	Photoemission studies of the surface electronic properties of L-CVD SnO2 ultra thin films Kwoka M, Ottaviano L, Szuber J