Applied Surface Science

Applied Surface Science, Vol.254, No.24 Entire volume, number list

ISSN: 0169-4332 (Print)

In this Issue (19 articles)

7999 - 7999	V International Workshop on Semiconductor Surface Passivation - Preface Szuber J
8000 - 8004	Surface and near-surface passivation, chemical reaction, and Schottky barrier formation at ZnO surfaces and interfaces Brillson LJ, Mosbacker HL, Hetzer MJ, Strzhemechny Y, Look DC, Cantwell G, Zhang J, Song JJ
8005 - 8015	Interface models and processing technologies for surface passivation and interface control in III-V semiconductor nanoelectronics Hasegawa H, Akazawa M
8016 - 8022	Passivation at semiconductor/electrolyte interface: Role of adsorbate solvation and reactivity in surface atomic and electronic structure modification of III-V semiconductor Lebedev MV
8023 - 8028	Structural properties of GaAs surfaces nitrided in hydrazine-sulfide solutions Berkovits VL, Masson L, Makarenko IV, Ulin VP
8029 - 8034	Study of S+ ion-assisted sulfurization of n-GaAs (100) surface Hu HY, Zhao Q
8035 - 8040	Analysis of mechanism of carbon removal from GaAs(100) surface by atomic hydrogen Tomkiewicz P, Winkler A, Krzywiecki M, Chasse T, Szuber J
8041 - 8045	New reconstruction-stoichiometry correlation for GaAs(001) surface treated by atomic hydrogen Toropetsky KV, Tereshchenko OE, Petukhov DA, Terekhov AS
8046 - 8049	Surface state density distribution at vacuum-annealed InP(100) surface as derived from the rigorous analysis of photoluminescence efficiency Tomkiewicz P, Adamowicz B, Miczek M, Hasegawa H, Szuber J
8050 - 8053	Sb-mediated growth of high-density InAs quantum dots and GaAsSb embedding growth by MBE Kakuda N, Yoshida T, Yamaguchi K
8054 - 8058	Properties of thick SiO2/Si structure formed at 120 degrees C by use of two-step nitric acid oxidation method Imai S, Mizushima S, Asuha, Kim WB, Kobayashi H
8059 - 8066	Passivation of defect states in Si-based and GaAs structures Pincik E, Kobayashi H, Brunner R, Takahashi M, Liu YL, Ortega L, Imamura K, Jergel M, Rusnak J
8067 - 8074	Passivation of structured p-type silicon interfaces: Effect of surface morphology and wet-chemical pre-treatment Angermann H
8075 - 8082	Nanostructure formation aided by self-organised Bi nanolines on Si(001) Srivastava GP, Miwa RH
8083 - 8088	Electronic and geometric investigations of the Ca/Si(111)-(5 x 2) surface AlZahrani AZ, Srivastava GP
8089 - 8092	XPS study of the surface chemistry of Ag-covered L-CVD SnO2 thin films Kwoka M, Ottaviano L, Passacantando M, Czempik G, Santucci S, Szuber J
8093 - 8097	Surface chemistry study of Mn-doped germanium nanowires Grossi V, Parisse P, Passacantando M, Santucci S, Impellizzeri G, Irrera A, Ottaviano L
8098 - 8105	Investigation of the 4H-SiC surface Guy OJ, Lodzinski M, Teng KS, Maffeis TGG, Tan M, Blackwood I, Dunstan PR, Al-Hartomy O, Wilks SP, Wilby T, Rimmer N, Lewis D, Hopkins J
8106 - 8110	Influence of surface cleaning effects on properties of Schottky diodes on 4H-SiC Kwietniewski N, Sochacki M, Szmidt J, Guziewicz M, Kaminska E, Piotrowska A