Applied Surface Science

Applied Surface Science, Vol.235, No.3 Entire volume, number list

ISSN: 0169-4332 (Print)

In this Issue (17 articles)

237 - 238	Special issue - Proceedings of the 3rd International Workshop on Semiconductor Surface Passivation SSP'03 Ustron Poland, 15-17 September, 2003 - Preface Szuber J
239 - 248	Reactivity and control of III-V surfaces for passivation and Schottky barrier formation Bruno G
249 - 259	Surface passivation and morphology of GaAs(100) treated in HCl-isopropanol solution Alperovich VL, Tereshchenko OE, Rudaya NS, Sheglov DV, Latyshev AV, Terekhov AS
260 - 266	High-resolution XPS analysis of GaP(001), (111)A, and (111)B surfaces passivated by (NH4)(2)S-x solution Suzuki Y, Sanada N, Shimomura A, Fukuda Y
267 - 273	Interaction of GaN epitaxial layers with atomic hydrogen Losurdo M, Giangregorio MM, Capezzuto P, Bruno G, Namkoong G, Doolittle WA, Brown AS
274 - 278	Raman scattering from LO-phonon-plasmon coupled modes in Ag-coated GaN nanocrystals Bessolov VN, Konenkova EV, Zhilyaev YV, Sierra BAP, Zahn DRT
279 - 292	Semiconductor surface and interface passivation by cyanide treatment Kobayashi H, Takahashi A, Maida O, Asano A, Kubota T, Ivanco J, Nakajima A, Akimoto K
293 - 304	Self-organised wires and antiwires on semiconductor surfaces Srivastava GP, Miwa RH
305 - 312	Ab initio pseudopotential calculations for the electronic and geometric structures of hydrogen covered Si(114)-(2 x 1) Smardon RD, Srivastava GP
313 - 321	STM/STS investigation of the interaction of Si with atomic scale vacancies on cleaved GaAs Teng KS, Dunstan PR, Wilks SR, Williams RH
322 - 339	Wet-chemical preparation and spectroscopic characterization of Si interfaces Angermann H, Henrion W, Rebien M, Roseler A
340 - 350	Simultaneous characterization of bulk impurities and interface states by photocurrent measurements Polignano ML, Caricato AP
351 - 363	Photoluminescence, structural and electrical properties of passivated a-Si : H based thin films and corresponding solar cells Pincik E, Kobayashi H, Takahashi M, Fujiwara N, Brunner R, Gleskova H, Jergel M, Mullerova J, Kucera M, Falcony C, Ortega L, Rusnak J, Mikula M, Zahoran M, Jurani R, Kral M
364 - 371	X-ray and optical investigation of KCN and HCN passivated structures based on amorphous silicon Pincik E, Kobayashi H, Takahashi A, Fujiwara N, Brunner R, Jergel A, Kopani A, Rusnak J
372 - 375	Removal of copper and nickel contaminants from Si surface by use of cyanide solutions Fujiwara N, Liu YL, Nakamura T, Maida O, Takahashi M, Kobayashi H
376 - 388	Investigation of Fermi-level pinning at silicon/porous- silicon interface by vibrating capacitor and surface photovoltage measurements Mizsei J, Shrair JA, Zolomy I
389 - 394	Studies of GaAs metal-insulator-semiconductor structures by the admittance spectroscopy method Kochowski S, Nitsch K, Paszkiewicz B, Paszkiewicz R, Szydlowski M