A1 - A4 |
Li mass transfer through a metallic copper film on a carbon fiber during the electrochemical insertion/extraction reaction Suzuki J, Yoshida M, Nakahara C, Sekine K, Kikuchi M, Takamura T |
A5 - A8 |
Electric double layer capacitance of highly porous carbon derived from lithium metal and polytetrafluoroethylene Shiraishi S, Kurihara H, Tsubota H, Oya A, Soneda Y, Yamada Y |
B1 - B3 |
Atomic structure of metastable pits formed on nickel Maurice V, Klein LH, Marcus P |
B4 - B6 |
Scanning electrochemical microscopy of electroactive defect sites in the native oxide film on aluminum Serebrennikova I, White HS |
C1 - C4 |
Suppression of abnormal grain growth in Ru film by N2O plasma treatment for (Ba, Sr) TiO3 dielectric film Yoon DS, Hong K, Yu YS, Roh JS |
C5 - C7 |
Selective deposition of thin copper films onto silicon with improved adhesion Magagnin L, Maboudian R, Carraro C |
E1 - E4 |
LiBOB and its derivatives - Weakly coordinating anions, and the exceptional conductivity of their nonaqueous solutions Xu W, Angell CA |
F1 - F2 |
Composition and thickness uniformity of chemical vapor deposited barium strontium titanate films on a patterned structure Lee JH, Rhee SW |
F3 - F5 |
Controllable change of porosity of 3-methylsilane low-k dielectric film Shamiryan DG, Baklanov MR, Vanhaelemeersch S, Maex K |
G1 - G3 |
Characterization of profiling techniques for ultralow energy arsenic implants Kasnavi R, Sun Y, Mount G, Pianetta P, Griffin PB, Plummer JD |
G4 - G6 |
Magnetic-field-assisted anodization of GaAs substrates Morishita Y, Kawai S, Sunagawa J, Suzuki T |
G7 - G10 |
Oxidation resistance of sputtered Ti1-xAlxN films for complementary metal oxide semiconductor storage node electrode barriers Kim SD, Hwang IS, Rhee JK, Cha TH, Kim HD |