63 - 65 |
A novel flame-retardant additive for lithium batteries Lee CW, Venkatachalapathy R, Prakash J |
66 - 68 |
Thermal stability of LiFePO4-based cathodes Andersson AS, Thomas JO, Kalska B, Haggstrom L |
69 - 72 |
Electrochemical deposition of a single phase of pure Cu2O films by current modulation methods Lee J, Tak Y |
73 - 76 |
Texturization of semiconductor surfaces: ZnTe Zenia F, Levy-Clement C, Triboulet R, Konenkamp R |
77 - 79 |
Preparation of peroxodisulfuric acid using boron-doped diamond thin film electrodes Michaud PA, Mahe E, Haenni W, Perret A, Comninellis C |
80 - 83 |
Properties and gap-fill capability of HPD-CVD phosphosilicate glass films for subquarter-micrometer ULSI device technology Vassiliev VY, Lin C, Fung D, Hsieh J, Sudijono JL |
84 - 86 |
Ultrathin 600 degrees C wet thermal silicon dioxide Appenzeller J, del Alamo JA, Martel R, Chan K, Solomon P |
87 - 89 |
Ultrasmooth GaN etched surfaces using photoelectrochemical wet etching and an ultrasonic treatment Shelton BS, Zhu TG, Wong MM, Kwon HK, Eiting CJ, Lambert DJH, Turini SP, Dupuis RD |
90 - 92 |
A New Approach for the study of chemical mechanical polishing Devecchio D, Schmutz P, Frankel GS |
93 - 94 |
Oxidation-induced stacking faults introduced by using a cavitating jet for gettering in silicon Soyama H, Kumano H |
95 - 98 |
Chemical mechanical polishing of Ta Hariharaputhiran M, Li Y, Ramarajan S, Babu SV |
99 - 102 |
C2F6/O-2 and C3F8/O-2 plasmas SiO2 etch rates, impedance analysis, and discharge emissions Entley WR, Hennessy WJ, Langan JG |
103 - 105 |
Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides Chen CC, Lin HC, Chang CY, Huang TY, Chien CH, Liang MS |
106 - 109 |
Ambient temperature oxygen sensors: Morphological effects of PbSnF4 incorporated in the sensing electrode on response Suda S, Eguchi T, Kuwano J |
110 - 112 |
Observation of energy transfer between Al3+ and Pr3+ in SrTiO3 phosphor Park JK, Ryu H, Kim KH, Park HD |