C47 - C50 |
Microstructure of trivalent chromium conversion coating on electrogalvanized steel plate Wen NT, Chen FJ, Ger MD, Pan YN, Lin CS |
D65 - D68 |
In situ oxide removal from aluminum by laser pulses followed by electroplating von Gutfeld RJ, West AC |
G41 - G45 |
Physical properties of strained Ba0.5Sr0.5(Ti,Mn)O-3 thin films buffered with La0.68Ba0.32MnO3 conductive layers Liang YC, Liang YC, Chu JP |
K73 - K77 |
Structural and nonlinear optical properties of self-assembled SnO2-doped silicon nanorings formed by pulsed laser ablation Rani JR, Pillai VPM, Sandeep CSS, Philp R |
K78 - K80 |
Fabrication and dye-sensitized solar cell performance of nanostructured NiO/coumarin 343 photocathodes Mizoguchi Y, Fujihara S |
K81 - K84 |
Protein immobilization onto silicon nanowires via electrografting of hexynoic acid Scheibal ZR, Xu W, Audiffred JF, Henry JE, Flake JC |
A125 - A128 |
Effect of polyacenic semiconductors on the performance of Olivine LiFePO4 Yang GL, Jalbout AF, Xu Y, Yu HY, He XG, Xie HM, Wang RS |
A129 - A131 |
A phosphorous additive for lithium-ion batteries Ma YL, Yin GP, Zuo PJ, Tan XL, Gao YZ, Shi PF |
A132 - A134 |
Crystallite size constraints on lithium insertion into brookite TiO2 Reddy MA, Pralong V, Varadaraju UV, Raveau B |
A135 - A139 |
Structural and electrochemical characterizations of solution derived LiMn0.5Ni0.5O2 as positive electrode for li-ion rechargeable batteries Karan NK, Saavedra-Arias JJ, Pradhan DK, Melgarejo R, Kumar A, Thomas R, Katiyar RS |
A140 - A144 |
Fabrication and electrochemical properties of three-dimensional structure of LiCoO2 fibers Lu HW, Yu L, Zeng W, Li YS, Fu ZW |
A145 - A149 |
The Zn-MnO2 battery: The influence of aqueous LiOH and KOH electrolytes on the intercalation mechanism Minakshi M, Singh P, Carter M, Prince K |
B127 - B131 |
Measurement of capillary pressure property of gas diffusion media used in proton exchange membrane fuel cells Nguyen TV, Lin G, Ohn H, Wang X |
B132 - B135 |
A look at the multiphase mixture model for PEM fuel cell simulations Gurau V, Edwards RV, Mann JA, Zawodzinski TA |
B136 - B139 |
Methanol tolerance of Pd-Co oxygen reduction reaction electrocatalysts using scanning electrochemical microscopy Lin CL, Sanchez-Sanchez CM, Bard AJ |
B140 - B143 |
Ce-modified (Mn,Co)(3)O-4 spinel coatings on ferritic stainless steels for SOFC interconnect applications Yang ZG, Xia GG, Nie ZM, Templeton J, Stevenson JW |
B144 - B147 |
A solid oxide fuel cell operating in gradual internal reforming conditions under pure dry methane Klein JM, Henault M, Gelin P, Bultel Y, Georges S |
B148 - B152 |
Reactive sensor for investigation of gas diffusion layer hydrophobicity in PEM fuel cells Cheng D, Ye SY, Gyenge E |
B153 - B155 |
The operation characteristics of MEAs with pinholes for polymer electrolyte membrane fuel cells Cho YH, Park HS, Kim J, Cho YH, Cha SW, Sung YE |
B156 - B160 |
The effect of manganese doping on chromium deposition at Pt/YSZ cathode interfaces Wang K, Fergus JW |
B161 - B165 |
Electrochemical observation of ligand effects on oxygen reduction at ligand-stabilized Pt nanoparticle electrocatalysts Pietron JJ, Garsany Y, Baturina O, Swider-Lyons KE, Stroud RM, Ramaker DE, Schull TL |
H207 - H209 |
Self-heating-induced negative bias temperature instability in poly-Si TFTs under dynamic stress Weng CF, Chang TC, Hsieh HP, Chen SC, Hsu WC, Kuo WC, Young TF |
H210 - H213 |
The role of the methyl and hydroxyl groups of low-k dielectric films on the nucleation of ruthenium by ALD Heo J, Won SJ, Eom D, Lee SY, Ahn YB, Hwang CS, Kim HJ |
H214 - H217 |
Method for determining the lubrication mechanism of post-ILD CMP brush scrubbing Sun T, Philipossian A |
H218 - H221 |
Mechanically flexible low-leakage nanocomposite gate dielectrics for flexible organic thin-film transistors Noh HY, Seol YG, Kim SI, Leez NE |
H222 - H225 |
High photoresponsivity of pentacene-based organic thin-film transistors with UV-treated PMMA dielectrics Zan HW, Yen KH |
H226 - H229 |
Electrode dependence of bipolar resistive switching in SrZrO3 : Cr perovskite film-based memory devices Park JW, Yang MK, Lee JK |
H230 - H232 |
Performance and interface characterization for contact etch stop layer-strained nMOSFET with HfO2 gate dielectrics under pulsed-IV measurement Wu WC, Chao TS, Chiu TH, Wang JC, Lai CS, Ma MW, Lo WC |
H233 - H235 |
Inversion-type InP MOSFETs with EOT of 21 angstrom using atomic layer deposited Al2O3 gate dielectric Zhao H, Shahrjerdi D, Zhu F, Kim HS, Ok I, Zhang MH, Yum JH, Banerjee SK, Lee JC |
H236 - H239 |
Fabrication of transfer-enhanced semiconductor substrates by wafer bonding and hydrogen exfoliation techniques Joshi MB, Hayashi SL, Goorsky MS |