Electrochemical and Solid State Letters

Electrochemical and Solid State Letters, Vol.7, No.8 Entire volume, number list

ISSN: 1099-0062 (Print)

In this Issue (29 articles)

B25 - B28	Insertion of SiO2 nanoparticles into pores of anodized aluminum by electrophoretic deposition in aqueous system Kamada K, Fukuda H, Maehara K, Yoshida Y, Nakai M, Hasuo S, Matsumoto Y
B29 - B30	Improved MCMB anodes by surface modification with self-assembling nonionic surfactants Reeves SD, Morris RS
C81 - C83	AFM observation for iron thin films electrodeposited in magnetic fields Matsushima H, Nohira T, Ito Y
C84 - C86	Contribution of primary chemical bonding states of amorphous carbon nitride to hardness Saito N, Ohta R, Lee KH, Kobayashi Y, Okazaki S, Inoue Y, Sugimura H, Takai O
C87 - C89	Plasma-enhanced ALD of titanium-silicon-nitride using TiCl4, SiH4, and N-2/H-2/Ar plasma Park JS, Kang SW
F45 - F48	Electrical properties of alumina films by plasma-enhanced atomic layer deposition Lim JW, Yun SJ
H27 - H28	Dependence of optical properties of ordered metal hole array on refractive index of surrounding medium Nishio K, Masuda H
H29 - H31	Density control for carbon nanotube arrays synthesized by ICP-CVD using AAO/Si as a nanotemplate Yen JH, Leu IC, Wu MT, Lin CC, Hon MH
J27 - J28	A voltammetric study of the effect of gold nanoparticles on the binding of DTIC to DNA bases Zhang RY, Wang XM, Gong SJ
J29 - J31	Crystallographically defined emitter contact technology for self-alignment process in InP/InGaAs HBTs Kim M, Jeon SK, Kwon YS
A221 - A223	Colloidal crystal-templated porous carbon as a high performance electrical double-layer capacitor material Moriguchi I, Nakahara F, Furukawa H, Yamada H, Kudo T
A224 - A227	Study of SEI layer formed on graphite anodes in PC/LiBOB electrolyte using IR spectroscopy Zhuang GV, Xu K, Jow TR, Ross PN
A228 - A230	Attenuation of aluminum current collector corrosion in LiTFSI electrolytes using fumed silica nanoparticles Li YX, Zhang XW, Khan SA, Fedkiw PS
A231 - A234	Miniature 250 mu m thick fuel cell with monolithically fabricated silicon electrodes Hayase M, Kawase T, Hatsuzawa T
A235 - A238	Improving thermal stability of LiMn2O4 thin films by in situ coating of alpha-MnO2 using high-pressure and high-temperature sputtering Chen GS, Chen GS, Hsiao HH, Louh RF, Humphreysc CJ
A239 - A241	Structural and electrochemical properties of nanosize layered Li[Li1/5Ni1/10Co1/5Mn1/2]O-2 Park KS, Cho MH, Jin SJ, Nahm KS
A242 - A246	New lithiated NASICON-type Li2Ni2(MoO4)(3) for rechargeable lithium batteries - Synthesis, structural, and electrochemical properties Begam KM, Michael MS, Taufiq-Yap YH, Prabaharan SRS
A247 - A249	Indium tin oxide/carbon composite electrode material for electrochemical supercapacitors Miura N, Oonishi S, Prasad KR
A250 - A253	Characterization of nanocrystalline Si-MCMB composite anode materials Wang GX, Yao J, Liu HK
A254 - A255	Polyelectrolyte composite materials with LiPF6 and tetraglyme Pappenfus TM, Mann KR, Smyrl WH
A256 - A258	Lithium ion conducting lithium sulfur oxynitride thin film Joo KH, Sohn HJ, Vinatier P, Pecquenard B, Levasseur A
G151 - G153	Effect of Pd addition on Ni-induced lateral crystallization and poly-Si TFTs Yoon YG, Kim BD, Kim MS, Choi SH, Joo SK
G154 - G157	Diffusion studies of copper on ruthenium thin film - A plateable copper diffusion barrier Chan R, Arunagiri TN, Zhang Y, Chyan O, Wallace RM, Kim MJ, Hurd TQ
G158 - G160	Design and performance of a controlled atmosphere polisher for silicon crystal polishing Doi T, Philipossian A, Ichikawa K
G161 - G163	Effect of oxygen on the diffusion of nitrogen implanted in silicon Mannino G, Privitera V, Scalese S, Libertino S, Napolitani E, Pichler P, Cowern NEB
G164 - G167	Subnanometer scaling of HfO2/metal electrode gate stacks Peterson JJ, Young CD, Barnett J, Gopalan S, Gutt J, Lee CH, Li HJ, Hou TH, Kim Y, Lim C, Chaudhary N, Moumen N, Lee BH, Bersuker G, Brown GA, Zeitzoff PM, Gardner MI, Murto RW, Huff HR
G168 - G171	Perspective on Si negative potential dissolution mechanism Starosvetsky D, Kovler M, Ein-Eli Y
G172 - G174	Low-temperature wafer bonding optimal O-2 plasma surface pretreatment time Zhang XX, Raskin JP
G175 - G178	Properties of Cu layers deposited on TiZr-based barriers and CMP compatibility of the barriers Balakumar S, Hara T, Kumar R, Wakabayashi T, Uchida M