B35 - B38 |
Electrochemical micromachining - Porous-type anodization of patterned aluminum-copper films Brevnov DA, Gamble TC, Atanassov P, Lopez GP, Bauer TM, Chaudhury ZA, Schwappach CD, Mosley LE |
D17 - D20 |
Application of freestanding perforated diamond electrodes for efficient ozone-water production Arihara K, Terashima C, Fujishima A |
H71 - H73 |
Comparison of TFTs made by IMPRINT and IMPRINT-ELA methods Hou CY, Wu YS |
H74 - H77 |
Green-emitting phosphor of LaAlGe2O7: Tb3+ under near-UV irradiation Li YC, Chang YH, Lin YF, Chang YS, Lin YJ |
H78 - H80 |
Multiwall carbon nanotube sensor for monitoring engine oil degradation Moon SI, Paek KK, Lee YH, Kim JK, Kim SW, Ju BK |
H81 - H83 |
Roughness effect on uniformity and reliability of sequential lateral solidified low-temperature polycrystalline silicon thin-film transistor Chen HT, Chen YC, Lin JX, Hsieh SI, King YC |
J31 - J33 |
Electrochromic properties of sputtered Ni oxide thin films in acidic KCl+H2SO4 aqueous solutions Abe Y, Lee SH, Tracy CE, Pitts JR, Deb SK |
J34 - J36 |
Direct evidence of electron accumulation in the grain boundary of yttria- doped nanocrystalline zirconia ceramics Lee JS, Anselmi-Tamburini U, Munir ZA, Kim S |
A373 - A375 |
SnO2 filled mesoporous tin phosphate - High capacity negative electrode for lithium secondary battery Kim JY, Cho J |
A376 - A378 |
LSM-infiltrated solid oxide fuel cell cathodes Sholklapper TZ, Lu C, Jacobson CP, Visco SJ, De Jonghe LC |
A379 - A381 |
Highly durable, proton-conducting semi-interpenetrating polymer networks from PVA/PAMPS composites by incorporating plasticizer variants Qiao JL, Okada T |
A382 - A385 |
Effects of Se flux on the microstructure of Cu(In,Ga)Se-2 thin film deposited by a three-stage co-evaporation process Kim KH, Yoon KH, Yun JH, Ahn BT |
A386 - A389 |
Effects of the electrolyte composition on the electric double-layer capacitance at carbon electrodes Morita M, Kaigaishi T, Yoshimoto N, Egashira M, Aida T |
A390 - A394 |
SnO2 pinning: An approach to enhance the electrochemical properties of nanocrystalline CuFe2O4 for lithium-ion batteries Selvan RK, Kalaiselvi N, Augustin CO, Doh CH |
C123 - C125 |
Highly conductive HfNx films prepared by plasma-assisted atomic layer deposition Kim EJ, Kim DH |
C126 - C130 |
Iron-phosphorous layers deposited by pulse electrochemical technique Miko A, Hempelmann R, Lakatos-Varsanyi M, Kalman E |
C131 - C133 |
Fabrication of nickel-multiwalled carbon nanotube composite films with excellent thermal conductivity by an electrodeposition technique Arai S, Endo M, Sato T, Koide A |
C134 - C137 |
Practical monitoring of filling performance in a copper plating bath Dow WP, Yen MY, Chou CW, Liu CW, Yang WH, Chen CH |
C138 - C140 |
Void-free trench-filling by electroless copper deposition using the combination of accelerating and inhibiting additives Hasegawa M, Okinaka Y, Shacham-Diamand Y, Osaka T |
C141 - C145 |
Electroless deposition of ultrathin Co-B based barriers for Cu metallization using an innovative seeding technique Chen GS, Tang YS, Chen ST, Yang TJ |
G259 - G261 |
SiO2 incorporation effects in Ge2Sb2Te5 films prepared by magnetron sputtering for phase change random access memory devices Ryu SW, Oh JH, Choi BJ, Hwang SY, Hong SK, Hwang CS, Kim HJ |
G262 - G264 |
Luminescent properties of CaSe1-xSx: Eu and application in LEDs Kim KN, Park JK, Choi KJ, Kim JM, Kim CH |
G265 - G267 |
The effect of fixed oxide charge in Al2O3 blocking dielectric on memory properties of charge trap flash memory devices Jeon S, Kim C |
G268 - G271 |
WORM-type memory device based on a conjugated copolymer containing europium complex in the main chain Ling QD, Song Y, Teo EYH, Lim SL, Zhu CX, Chan DSH, Kwong DL, Kang ET, Neoh KG |
G272 - G275 |
Influence of TaN gate electrode microstructure on its dry etch properties Shamiryan D, Paraschiv V, Tokei Z, Beckx S, Boullart W |
G276 - G278 |
Temperature effects of n-MOSFET devices with uniaxial mechanical strains Tsai MN, Chang TC, Liu PT, Cheng O, Huang CT |