F9 - F15 |
Theoretical aspects of impedance spectroscopy at a disk electrode embedded in an insulating plane: Reciprocity relationships Antohi P, Scherson DA |
C51 - C54 |
Preparation of organized Ti nanorods by successive electrochemical processes in aqueous solution and molten salt Yasuda K, Ghicov A, Nohira T, Kani N, Hagiwara R, Schmuki P |
D69 - D71 |
Fabrication of ZnO nanowire devices via selective electrodeposition Zhang M, Zhou ZY, Yang X, Ye XY, Wang ZL |
D72 - D74 |
Metal-fixed multiwalled carbon nanotube patterned emitters using photolithography and electrodeposition technique Arai S, Saito T, Endo M |
D75 - D79 |
Electrodeposition of Si thin film in a hydrophobic room-temperature molten salt Nishimura Y, Fukunaka Y, Nishida T, Nohira T, Hagiwara R |
E25 - E27 |
Formation of tin nanoparticles embedded in poly(L-lactic acid) fiber by electrospinning Yagi S, Nakagawa T, Matsubara E, Matsubara S, Ogawa S, Tani H |
F16 - F18 |
Sensitive determination of honokiol using acetylene black film-modified electrode Huang WS, Zheng XJ, Zhu DZ, Wu KB |
G47 - G49 |
Structural, electrical, and magnetic properties of Bi0.98La0.02Fe0.70Sc0.30O3 thin film prepared on LaAlO3 substrates using a chemical solution process Huang A, Shannigrahi SR, Lin VKX |
J69 - J71 |
Mixed-potential-type YSZ-Based sensor capable of detecting propene at several tens ppb level Miura N, Mori S, Wama R, Elumalai P, Plashnitsa VV, Utiyama M |
K85 - K88 |
Electrochemical synthesis and characterization of TbO2-x flowerlike nanostructures Lu XH, Li GR, Yu XL, Tong YX |
K89 - K92 |
Atomic layer deposition of Ru nanocrystals with a tunable density and size for charge storage memory device application Yim SS, Lee DJ, Kim KS, Lee MS, Kim SH, Kim KB |
K93 - K97 |
Cerium oxyhydroxide nanowire growth via electrogeneration of base in nonaqueous electrolytes Bocchetta P, Santamaria M, Di Quarto F |
K98 - K100 |
Size-dependent characteristics of indium-seeded Si nanowire growth Iacopi F, Richard O, Eichhammer Y, Bender H, Vereecken PM, De Gendt S, Heyns M |
A151 - A154 |
A dilatometric study of lithium intercalation into powder-type graphite electrodes Hahn M, Buqa H, Ruch PW, Goers D, Spahr ME, Ufheil J, Novak P, Kotz R |
A155 - A157 |
The effect of Al substitution on the reactivity of delithiated LiNi((0.5-z))Mn((0.5-z))A1(2z)O(2) with nonaqueous electrolyte Zhou F, Zhao XM, Lu ZH, Jiang JW, Dahn JR |
A158 - A162 |
Heteropoly acid electrolytes for double-layer capacitors and pseudocapacitors Lian K, Li CM |
A163 - A166 |
Hydrothermal synthesis and electrochemical performance of Li1.59H0.41MnO3 as a cathode material for lithium-ion battery Yue HJ, Huang XK, Lv DP, Yang Y |
B167 - B170 |
Efficient reduction of CO2 in a solid oxide electrolyzer Bidrawn F, Kim G, Corre G, Irvine JTS, Vohs JM, Gorte RJ |
H241 - H244 |
Integration of selective area anodized AgCl thin film with AlGaN/GaN HEMTs for chloride ion detection Hung SC, Wang YL, Hicks B, Pearton SJ, Ren F, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, Chi GC |
H245 - H247 |
Low-voltage resistive switching within an oxygen-rich Cu/SbTe interface for application in nonvolatile memory Goux L, Lisoni JG, Gille T, Attenborough K, Wouters DJ |
H248 - H251 |
The effect of deposition conditions and annealing on the performance of high-mobility GIZO TFTs Barquinha P, Pereira L, Goncalves G, Martins R, Fortunato E |
H252 - H254 |
Evaluation of gadolinium oxide as a blocking layer of charge-trap flash memory cell Pu J, Kim SJ, Kim YS, Cho BJ |
H255 - H257 |
Application of deuterium exchange to analyze moisture uptake characteristics of porous low-dielectric-constant SiOCH films Vinogradova E, Smith CE, Mueller DW, Reidy RF |
H258 - H261 |
Presence and resistance to wet etching of silicon oxycarbides at the SiO2/SiC interface Correa SA, Radtke C, Soares GV, Baumvol IJR, Krug C, Stedile FC |
H262 - H265 |
Laser-induced melt-mediated Ni(Pt) germanosilicide formation on condensed Si1-xGex/Si substrates Setiawan Y, Lee PS, Balakumar S, Pey KL, Wang XC |
H266 - H268 |
Epitaxial formation of a metastable hexagonal nickel-silicide De Keyser K, Van Bockstael C, Detavernier C, Van Meirhaeghe RL, Jordan-Sweet J, Lavoie C |
H269 - H271 |
Low operation voltage of nitride-based LEDs with Al-doped ZnO transparent contact layer Kuo CH, Yeh CL, Chen PH, Lai WC, Tun CJ, Sheu JK, Chi GC |