xBiAlO(3)-(1-x)PbTiO3 (xBA-PT, x=0-0.1) solid solution thin films were prepared on indium tin oxide-coated glass substrates using a chemical solution deposition method at an annealing temperature of 600oC, and the effects of bismuth aluminate (BA) content on the structural, dielectric, and ferroelectric properties of the thin films were investigated. Formation of the solid solution thin films has been confirmed by XRD and Raman analysis. The thin films crystallize in the perovskite structure without the formation of any detectable secondary phase. With increasing BA content, the thin films transform the tetragonal phase into a pseudocubic phase. When x is 0.08, the thin film exhibits high dielectric constant and large remanent polarization (2P(r)) values, which are 384 and 58 mu C/cm2, respectively. In addition, the dielectric loss and the leakage current density were considerably reduced by adding BA to the thin films.