FeSe1-x samples have been prepared by a solid-state reaction in the Ar+3% H-2 gas flow. The samples sintered at 410 degrees C were of the tetragonal PbO structure (beta-phase), showing little trace of delta-phase (hexagonal). However, the samples sintered at higher temperatures contained a fair amount of delta-phase, which was unable to be eliminated completely by subsequent annealing at < 450 degrees C for a prolonged period. Both M-T and R-T measurements showed that sintered samples of beta-phase were superconducting with an onset T-c above 8.1 K. Thick films of FeSe1-x were grown on LaAlO3 substrates by liquid phase processing with SeSn as the flux. In contrast to the sintering, the films grown around 910 degrees C from the Sn-containing liquid had a pure beta-phase. Although the phase diagram showed some solid solubility of Sn in FeSe, energy-dispersive X-ray spectroscopy failed to find Sn trace in the crystallized films, which showed a steeper superconducting transition at lower T-c of 6.0 K. To clarify whether the possible Sn contamination caused the drop of T-c, FeSe1-x:5% Sn samples were sintered, which showed little change of T-c from the pure beta-FeSe1-x. The cause for the T-c reduction of thick films remains unclear.