Oxidation of Al(2)O(3) scale-forming alloys is of immense technological significance and has been a subject of much scientific inquiry for decades. The oxidation reaction is remarkably complex, involving issues of alloy composition, kinetics, thermodynamics, microstructure, mechanics and mechanical properties, crystallography, etc. A brief overview of the formation of passivating, thermally grown oxide Al(2)O(3) scales will be given in the light of recent findings on the defect structure and associated transport behavior of alpha-Al(2)O(3). It is inferred that the electronic structure of Al(2)O(3) is of direct relevance to understand the Al(2)O(3) scale growth. We also discuss the effect of the so-called "reactive" elements (REs)-Y, Zr, and Hf-on reducing the rate of Al(2)O(3) scale thickening by reducing the outward flux of aluminum. An important aspect of the "new perspective" is the suggestion that the REs change the electronic structure of Al(2)O(3)-the relevant near-band-edge defect (grain boundary) states that are crucial to vacancy creation both at the scale/gas and scale/metal interfaces.