A nanostructured SiC was successfully obtained through the decomposition of Al(4)SiC(4) additive during spark plasma sintering at the lowest temperature so far published under the pressing condition of below 121 MPa. The specimen had a relative density of 95% after sintering at 1450 degrees C, and nearly full densification with a grain size of around 70 nm was achieved at 1500 degrees C. Heavy Al segregation occurred at the grain boundaries, which caused the low-temperature sintering most presumably by promoting grain-boundary diffusion.