Nitride phosphor SrAlSi4N7:Eu2+ was synthesized by gas pressure sintering of powder mixtures of Sr3N2, AlN, alpha-Si3N4, and EuN at 1750 degrees C under 0.48 MPa N-2. The photoluminescent properties of SrAlSi4N7:Eu2+ were measured and analyzed. Two-peak emission from Eu2+ located at two different Sr sites in the SrAlSi4N7 host structure was observed. When the phorphors were excited at 410 nm, the highest emission intensity was found to be similar to 126% of that in YAG:Ce3+ excited at 460 nm. The highest relative emission intensity at 150 degrees C was similar to 84.6% of that at 30 degrees C. The highest external quantum efficiency acheived was 58.5%. SrAlSi4N7:Eu2+-based phosphors are potential for white light-emitting diodes.