We have adapted a simple concept analogous to substrate tilting used in common chemical vapor deposition processes to enhance the lateral growth of zinc oxide nanowires for bridging two adjacent electrodes in sensor chips. The chips were placed at elevated positions to avoid reactant depletion due to the existence of a diffusion boundary layer atop the horizontal substrate support. We show that the nanowire bridging is much improved and better than that reported in the literatures. As a result, the sensor chip sensitivity is also enhanced as compared with the previously reported data.